Feb.1999
FS10VS-06 OUTLINE DRAWING Dimensions in mm
TO-220S
MITSUBISHI Nch POWER MOSFET
FS10VS-06
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
60
±20
10
40
10
10
40
30
–55 ~ +150
–55 ~ +150
1.2
VGS = 0V
VDS = 0V
L = 100µH
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
A
A
W
°C
°C
g
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
10.5MAX.
1.3
1.5MAX.
qwe
r4.5
0
+0.3
–0
3.0
+0.3
–0.5
150.8
8.6 ± 0.3
9.8 ± 0.5 1.5MAX.
(1.5)
0.5
4.5
2.6 ± 0.4
B
q GATE
w DRAIN
e SOURCE
r DRAIN
wr
q
e
¡10V DRIVE
¡VDSS .................................................................................. 60V
¡rDS (ON) (MAX) ..............................................................78mΩ
¡ID ......................................................................................... 10A
¡Integrated Fast Recovery Diode (TYP.) ............. 55ns
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
0
10
20
30
40
50
0 20050 100 150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
210
0
357 2 10
1
357 2 10
2
357 2
10–1
100
101
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
tw = 10ms
T
C
= 25°C
Single Pulse
100ms
10ms
1ms
DC
0
4
8
12
16
20
0 0.4 0.8 1.2 1.6 2.0
V
GS
= 20V 10V 8V 7V
5V
6V
Tc = 25°C
Pulse Test
P
D
= 30W
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1.0
V
GS
= 20V
5V
6V10V 8V
Tc = 25°C
Pulse Test
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
60
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
58
0.29
9.0
600
180
60
18
22
30
17
1.0
—
55
—
±0.1
0.1
4.0
78
0.39
—
—
—
—
—
—
—
—
1.5
4.17
—
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-06
HIGH-SPEED SWITCHING USE
0
8
16
24
32
40
0 4 8 12 16 20
Tc = 25°C
V
DS
= 10V
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
10
0
10
1
23457 10
2
23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
= 25°C
V
DS
= 5V
Pulse Test
75°C
125°C
0
20
40
60
80
100
10
0
357 2 10
1
357 2 10
2
357 23
V
GS
= 10V
20V
T
C
= 25°C
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
0 4 8 12 16 20
Tc = 25°C
Pulse Test
10A
5A
I
D
= 15A
10
0
10
1
23457 10
2
23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
Tch = 25°C
V
DD
= 30V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
d(off)
t
d(on)
t
f
t
r
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
0
357 2 10
1
357 2 10
2
357 32
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
Ciss
Coss
Crss
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0
8
16
24
32
40
0 0.4 0.8 1.2 1.6 2.0
V
GS
= 0V
Pulse Test
T
C
= 125°C
75°C
25°C
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50 0 50 100 150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
0
1.0
2.0
3.0
4.0
5.0
–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
0
4
8
12
16
20
0 4 8 12 16 20
V
DS
= 10V
Tch = 25°C
I
D
= 10A
20V
40V
