HGT1S20N60C3S9A - ON SEMICONDUCTOR

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HGTG20N60C3, HGTP20N60C3,

HGT1S20N60C3S

45A, 600V, UFS Se rie s N-Channel IGBT

This family of MOS gated high voltage switching devices

combining the best features of MOSFETs and bipolar

tra nsi stors. These devices hav e th e hi gh input impedance of

a MOSFET and the lo w on-s tate conduc tion lo ss of a bi polar

tra nsi stor. The m uch lower o n-st ate voltag e drop varies only

moderately between 25oC and 150oC.

The IGBT is ideal fo r ma n y high voltage switching

applic ations operati ng at mod erate frequenci es where low

conduction losses are es sential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly developmental ty pe TA49178.

Symbol

Features

• 45A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC

• Short Circui t Rating

• Lo w Conduction Loss

• Related Literature

- TB334 “Guideli nes for Soldering Surface Moun t

Components to PC Boards”

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB ( A LTERNATE VERSION)

JEDEC TO-263AB

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N60C3 TO-247 G20N60C3

HGTP20N60C3 TO-220AB G20N60C3

HGT1S20N60C3S TO-263AB G20N60C3

NO TE: When ordering, use the entire part number . Add the suffix 9A

to obtain the TO-263AB variant in the tape and reel, i.e.,

HGT1S20N60C3S9A.

COLLECTOR

(FLANGE)

GCE

COLLECTOR

(FLANGE)

GCOLLECTOR

(FLANGE)

INTERSIL CORP ORATION IGBT P R ODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

Data Sheet December 2001

Absolute Maximum Ratings TC = 25oC, U nless Otherwise Specified ALL TYPES UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 45 A

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V

Gate to Emitte r Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 20A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD164 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case fo r 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, s ee Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300

260

Short Circuit Withstand Ti me (Not e 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4µs

Short Circuit Withstand Ti me (Not e 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs

CAUTION: Str esses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess onl y rating and operation o f the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. VCE(PK) = 360V, TJ = 125oC, RG = 10Ω.

Electrical Specifications TC = 25oC, Unles s Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S

Collector to Emitter Breakdown Voltag e BVCES IC = 250µA, VGE = 0V 600 - - V

Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 28 - V

Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA

TC = 150oC--5.0mA

Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110

VGE = 15V TC = 25oC-1.41.8V

TC = 150oC-1.51.9V

Gate to Emitter Threshold V oltage VGE(TH) IC = 250µA, VCE = VGE 3.4 4.8 6.3 V

Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG =

10Ω, VGE = 15V,

L = 100µH

VCE = 480V 120 - - A

VCE = 600V 20 - - A

Gate to Emitter Plateau Voltage VGEP ICE = IC110, VCE = 0.5 BVCES -8.4- V

On-State Gate Charge QG(ON) ICE = IC110

VCE = 0.5 BVCES VGE = 15V - 91 110 nC

VGE = 20V - 122 145 nC

Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC

ICE = IC110

VCE = 0.8 BVCES

VGE = 15V

RG = 10Ω

L = 1mH

Test Circuit (Figure 17)

-2832ns

Current Rise Time trI -2428ns

Current Turn-Off Delay Time td(OFF)I - 151 210 ns

Current Fall Time tfI -5598ns

Turn-On Energy (Note 4) EON1 - 295 320 µJ

Turn-On Energy (Note 4) EON2 - 500 550 µJ

Turn-Off Energy (Note 3 ) EOFF - 500 700 µJ

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC

ICE = IC110

VCE = 0.8 BVCES

VGE = 15V

RG = 10Ω

L = 1mH

Test Circuit (Figure 17)

-2832ns

Current Rise Time trI -2428ns

Current Turn-Off Delay Time td(OFF)I - 280 450 ns

Current Fall Time tfI - 108 210 ns

Turn-On Energy (Note 4) EON1 - 380 410 µJ

Turn-On Energy (Note 4) EON2 -1.01.1mJ

Turn-Off Energy (Note 3 ) EOFF -1.21.7mJ

Thermal Resistance Junction To Case RθJC - - 0.76 oC/W

NOTES:

3. Turn-Off Energy Loss (EOFF) is defined as t he integral of the instantaneous po wer loss starting at the trailing edge of t he input pulse and ending

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

4. V alues for two Turn-On loss conditions are shown for the con venience of the circ uit des igner. EON1 is the turn-on loss of the IGBT only. EON2 is the

turn-on loss when a typi cal dio de i s u sed i n t he t est circuit and the di od e is at the same TJ as th e I GBT. The diode type is specified in Fi gure 17.

Typical Performance Curves Unless Otherwise Specified

FIGURE 1. DC COLLECT OR CURRENT vs CASE

TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

FIGURE 3. OPERA TING FREQUE NCY vs COLLECT OR T O

EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

Electrical Specifications TC = 25oC, Unles s Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S

TC, CASE TEMPERATURE (oC)

ICE, DC COLLECTOR CURRENT (A)

VGE = 15V

25 75 100 125 150

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

700

ICE, COLLECTOR TO EMITTER CURRENT (A)

300 400200100 500 600

100

120

140 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH

fMAX , OPERATING FREQUENCY (kHz)

ICE, COLLECTOR TO EMITTER CURRENT (A)

100

4010 20

fMAX1 = 0.05 / (td(OFF)I + td(ON)I)

RØJC = 0.76oC/W, SEE NOTES

PC = CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

fMAX2 = (PD - PC) / (EON2 + EOFF)

TCVGE

110oC10V

15V

75oC

110oC

75oC10V

15V

TJ = 150oC, RG = 10Ω,

L = 1mH, VCE = 480V

VGE, GATE TO EMITTER VOLTAGE (V)

ISC, PEAK SHORT CIRCUIT CURRENT (A)

tSC, SHORT CIRCUIT WITHSTAND TIME (µs)

10 11 12 13 14 15

150

200

250

300

350

tSC

ISC

400

450

VCE = 360V, RG = 10Ω, TJ = 125oC

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

FIGURE 5. COLLECTOR TO EMIT TER ON-STATE V OLTAGE FIGURE 6. COLLECTOR TO EMIT TER ON-STATE VOLTAGE

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT OR T O

EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECT OR TO

EMITTER CURRENT

FIGURE 9. TURN-ON DELAY TIME vs COLLECT OR TO

EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTO R T O

EMITTER CURRENT

Typical Performance Curves Unless Otherwise Specified (Continued)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE, COLLECTOR TO EMITTER CURRENT (A)

100

610

PULSE DURATION = 250µs

DUTY CYCLE <0.5%, VGE = 10V

TC = -55oC

TC = 150oC

TC = 25oC

ICE, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

150

200

250

300

023

100

DUTY CYCLE <0.5%, VGE = 15V

PULSE DURATION = 250µs

TC = 150oC

TC = -55oC

TC = 25oC

EON2, TURN-ON ENERGY LOSS (mJ)

2.5

1.5

ICE, COLLECTOR TO EMITTER CURRENT (A)

2.0

1.0

0.5

2010 25155

3.0

030 35 40

TJ = 25oC, TJ = 150oC, VGE = 15V

TJ = 25oC, TJ = 150oC, VGE = 10V

RG = 10Ω, L = 1mH, VCE = 480V

3.5

4.0

ICE, COLLECTOR TO EMITTER CURRENT (A)

EOFF, TURN-OFF ENERGY LOSS (mJ)

0.5

252010 155

1.0

2.5

2.0

1.5

30 35 40

3.0

TJ = 25oC; VGE = 10V OR 15V

TJ = 150oC; VGE = 10V OR 15V

RG = 10Ω, L = 1mH, VCE = 480V

ICE, COLLECTOR TO EMITTER CURRENT (A)

tdI, TURN-ON DELAY TIME (ns)

20 10 155

403020 3525

50 RG = 10Ω, L = 1mH, VCE = 480V

TJ = 25oC, TJ = 150oC, VGE = 15V

TJ = 25oC, TJ = 150oC, VGE = 10V

ICE, COLLECTOR TO EMITTER CURRENT (A)

trI, RISE TIME (ns)

125

100

150

10 155403020 3525

175

200

TJ = 25oC AND TJ = 150oC, V GE = 15V

TJ = 25oC, TJ = 150oC, VGE = 10V

RG = 10Ω, L = 1mH, VCE = 480V

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR T O

EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECT OR T O EMITT ER

CURRENT

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITT ER VOLTAGE

Typical Performance Curves Unless Otherwise Specified (Continued)

10 15 255

250

100

175

125

150

200

225

ICE, COLLECTOR TO EMITTER CURRENT (A)

td(OFF)I, TURN-OFF DELAY TIME (ns)

30 35 40

RG = 10Ω, L = 1mH, VCE = 480V

TJ = 150oC, VGE = 10V, VGE = 15V

TJ = 25oC, VGE = 10V, VGE = 15V

275

300

ICE, COLLECTOR TO EMITTER CURRENT (A)

tfI, FALL TIME (ns)

100

10 20 255 15 303540

RG = 10Ω, L = 1mH, VCE = 480V

110

120

TJ = 150oC, VGE = 10V OR VGE = 15V

TJ = 25oC, VGE = 10V OR 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

100

150

5789106

VGE, GATE TO EMITTER VOLTAGE (V)

200

250

300

12 13 14 15

PULSE DURATION = 250µs

DUTY CYCLE <0.5%, VCE = 10V

TC = 150oC

TC = 25oC

TC = -55oC

Qg, GATE CHARGE (nC)

01020 40

VGE, GATE TO EMITTER VOLTAGE (V)

50 10030

16 IG (REF) = 1mA, RL = 15Ω, TC = 25oC

VCE = 400V

VCE = 200V

VCE = 600V

60 70 80 90

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

0 5 10 15 20 25

C, CAPACITANCE (nF)

CIES

COES

CRES

FREQUENCY = 1MHz

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Ci rcuit and Waveforms

FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 18. SWITCHING TEST WAVEFORMS

Typical Performance Curves Unless Otherwise Specified (Continued)

t1, RECTANGULAR PULSE DURAT ION (s)

ZθJC, NORMALIZED THERMAL RESPONSE

10-3

10-2

10-1

100

10-5 10-3 10-2 10-1 100101

10-4

0.1

0.2

0.05

0.02

SINGLE PULSE t1

DUTY FACTOR, D = t1 / t2

PEAK TJ = (PD X ZθJC X RθJC) + TC

0.5

0.01

RG = 10Ω

L = 1mH

VDD = 480V

RHRP3060

tfI

td(OFF)I trI

td(ON)I

10%

90%

10%

90%

VCE

ICE

VGE

EOFF

EON2

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to

gate- ins ul atio n dam age by the electrostatic discharge of

energy through the devices. When handling these devices,

care should be exercised to assure that the static charge

built in the handler’ s body cap ac itan ce is not disc ha rged

through the device. With proper handling and application

procedures, however, IGBTs are currently being extensively

used in production b y nume rous equipment m anuf acturers in

military, indus trial and con su mer appli cations, w ith vi rtually

no damage problems due to electrostatic discharge. IGBTs

can be handled safely if the follow in g basic precautions are

taken:

1. Prior to assem b ly int o a circ uit, al l lead s sho uld be k ept

shorted together either by the use of metal shorting

springs or by the insertion into co nductive material such

as “ECCOSORBD™ LD26” or equivalent.

2. When de vi ces are remov ed by hand from their carriers,

the hand being u sed shoul d be grou nded b y any suitab le

means - for example, with a metallic wristband.

3. Tips of solderi ng iron s sho uld be grounded.

4. De vic es sho uld n e ver be ins erted into or r emo v ed from

circuits with power on.

5. Gate Voltage Rating - Nev er e xc eed the gate- vol tage

rat ing of VGEM. Exceedi ng the rated VGE can result in

permanent damage to the oxide layer in the ga te region.

6. Gate Termination - The gates of thes e de vices are

essentially capacitors. Circuits that leave the gate open-

circuit ed or fl oating shoul d be a v oide d. Thes e condi tions

can resu lt in turn-on of the devic e due to voltage buildup

on the input capacitor due to leakage currents or pickup.

7. Gate Protection - The se de vices do no t hav e an internal

monolithic Zener diode from gate to emitter. If gate

protection is required an e xternal Zener is recommended.

Operating Frequency Information

Op erating frequen cy informatio n for a typical device

(Figure 3) is presented as a guide f or est imating device

performance for a specific application. Other typical

frequency vs collector current (ICE) plots are possible us in g

the inf o rmatio n shown fo r a typical unit in Fi gures 5, 6, 7 , 8, 9

and 11. The operating frequency plot (Figure 3) of a typical

device shows fMAX1 or fMAX2; whichever is smaller at each

point. The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

fMAX1 is defin ed by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).

Deadti me (the de nominato r) has bee n arbit rarily held to 10%

of the on -sta te tim e for a 50% duty factor. Other defi ni tion s

are possible. td(OFF)I and td(ON)I are defined in Figure 18.

Device turn-off delay can establish an addition al fr eque n cy

limitin g con diti on for an applic ation other than TJM. td(OFF)I

is important when controlling output ripple under a lightly

loaded condition.

fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The

allow able dissipation (PD) is defined by PD = (TJM - TC)/RθJC.

The sum of device switchi ng and conduction losses must

not exceed PD. A 50% duty factor was used (Figure 3) and

the conduction losses (PC) are approximated by

PC=(V

CE xI

CE)/2.

EON2 and EOFF are defined in the switching waveforms

shown in Figure 18. EON2 is the inte gral of the

instant aneous power loss (ICE x VCE) during turn-on and

EOFF is the integral of th e instantaneous power loss

(ICE xV

CE) during turn-off. All tail losses are inc luded in

the calc ulation for EOFF; i.e., the co llector current equals

zero (ICE = 0).

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

DISCLAIMER

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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

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not intended to be an exhaustive list of all such trademarks.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerTrench

QFET™

QS™

QT Optoelectronics™

Quiet Series™

SILENT SWITCHER

FAST

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

Rev. H4



ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E2CMOSTM

EnSignaTM

FACT™

FACT Quiet Series™

SMART START™

STAR*POWER™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

TruTranslation™

UHC™

UltraFET



STAR*POWER is used under license

VCX™

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