1C4D20120A Rev. C
C4D20120A
Silicon Carbide Schottky Diode
Z-Rec® RectifieR
Features
• 1.2kVSchottkyRectier
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitching
• ExtremelyFastSwitching
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
• MotorDrives
Package
TO-220-2
Maximum Ratings (TC=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 1200 V
VRSM SurgePeakReverseVoltage 1300 V
VRDCPeakReverseVoltage 1200 V
IFContinuousForwardCurrent 53.5
25.5
20
A
TC=25˚C
TC=135˚C
TC=150˚C
IFRM RepetitivePeakForwardSurgeCurrent 91
61 ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IFSM Non-RepetitiveForwardSurgeCurrent 130
110 ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IF,Max Non-RepetitivePeakForwardCurrent 1150
950 ATC=25˚C,tP=10ms,Pulse
TC=110˚C,tP=10ms,Pulse
Ptot PowerDissipation 242
104 WTC=25˚C
TC=110˚C
TJ OperatingJunctionRange -55 to
+175 ˚C
Tstg StorageTemperatureRange -55 to
+135 ˚C
TO-220MountingTorque 1
8.8
Nm
lbf-in
M3Screw
6-32Screw
Part Number Package Marking
C4D20120A TO-220-2 C4D20120
PIN1
PIN2 CASE
VRRM=1200V
IF (TC=135˚C) = 25.5 A
Qc  =99nC
2C4D20120A Rev. C
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.5
2.2
1.8
3VIF=20ATJ=25°C
IF=20ATJ=175°C
IRReverseCurrent 35
65
200
400 μA VR=1200VTJ=25°C
VR=1200VTJ=175°C
QCTotalCapacitiveCharge 99 nC
VR=800V,IF=20A
di/dt=200A/μs
TJ=25°C
C TotalCapacitance
1500
93
67
pF
VR=0V,TJ=25°C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
VR=800V,TJ=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC
ThermalResistancefromJunction
toCase 0.62 °C/W
Typical Performance
Figure1.ForwardCharacteristics
0
5
10
15
20
25
30
35
40
0 1 2 3 4
Figure2.ReverseCharacteristics
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0500 1000 1500
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
IF (A)
VF (V) VR (V)
IR (mA)
3C4D20120A Rev. C
0
20
40
60
80
100
120
140
0200 400 600 800 1000 1200
80
100
120
140
160
180
0
20
40
60
25 50 75 100 125 150 175
Figure3.CurrentDerating Figure4.PowerDerating
0
50
100
150
200
250
25 50 75 100 125 150 175
Figure5.RecoveryChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage
Typical Performance
10%Duty
20%Duty
30%Duty
50%Duty
70%Duty
DC
0
200
400
600
800
1000
1200
1400
1600
0.1 110 100 1000
IF(peak) (A)
TC ˚C
PTot (W)
TC ˚C
C (pF)
VR (V)
Qrr (nC)
VR (V)
4C4D20120A Rev. C
20.0
25.0
30.0
35.0
40.0
45.0
50.0
Capacitive Energy (uJ)
0.0
5.0
10.0
15.0
0 200 400 600 800 1000
E
C
Capacitive Energy (uJ)
VRReverse Voltage (V)
Typical Performance
1000
10000
IFSM(A)
10
100
1.E-05 1.E-04 1.E-03 1.E-02
tp(s)
10000
1000
100
10
Figure7.TypicalCapacitanceStoredEnergy Figure8.Non-RepetitivePeakForwardSurgeCurrent
versusPulseDuration(sinusoidalwaveform)
tp (s)
IFSM (A)
TJ =25°C
TJ=110°C
VR (V)
50
45
40
35
30
25
20
15
10
5
0
02004006008001000
EC(mJ)
1E-051E-041E-031E-02
Figure9.TransientThermalImpedance
10E
3
100E-3
1
0.5
0.3
0.1
0.05
0.02
SinglePulse
1E-3
10E
3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5C4D20120A Rev. C
A
C
E
D
G
H
B
J
L
M
N
F
P
Q
S
T U
V
W
X
Y
M in M ax M in M ax
A .395 .410 10.033 10.414
B .235 .255 5.969 6.477
C .102 .112 2.591 2.845
D .337 .337 8.560 8.560
E .590 .610 14.986 15.494
F .149 .153 3.785 3.886
G 1.127 1.147 28.626 29.134
H .530 .550 13.462 13.970
J
L .028 .036 .711 .914
M .045 .055 1.143 1.397
N .195 .205 4.953 5.207
P .170 .180 4.318 4.572
Q .048 .054 1.219 1.371
S 3° 5° 3° 5°
T 3° 5° 3° 5°
U 3° 5° 3° 5°
V .100 .110 2.54 2.794
W .014 .021 .356 .533
X 3° 5° 3° 5°
Y .395 .410 10.033 10.414
Z .130 .150 3.302 3.810
Inc h es
M illim eters
P OS
R 0.010 R 0.254
1 2
Z
Package Dimensions
PackageTO-220-2 POS Inches Millimeters
Min Max Min Max
A .381 .410 9.677 10.414
B.235 .255 5.969 6.477
C .100 .120 2.540 3.048
D.223 .337 5.664 8.560
E.590 .615 14.986 15.621
F .143 .153 3.632 3.886
G1.105 1.147 28.067 29.134
H.500 .550 12.700 13.970
JR0.197 R0.197
L .025 .036 .635 .914
M .045 .055 1.143 1.397
N.195 .205 4.953 5.207
P .165 .185 4.191 4.699
Q.048 .054 1.219 1.372
S 3° 6° 3° 6°
T 3° 6° 3° 6°
U3° 6° 3° 6°
V.094 .110 2.388 2.794
W .014 .025 .356 .635
X 3° 5.5° 3° 5.5°
Y .385 .410 9.779 10.414
z.130 .150 3.302 3.810
NOTE:
1. DimensionL,M,WapplyforSolderDip
Finish
PIN1
PIN2 CASE
Recommended Solder Pad Layout
Part Number Package Marking
C4D20120A TO-220-2 C4D20120
TO-220-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
66 C4D20120A Rev. C
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
Diode Model
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT= VT+If*RT
VT =0.97+(TJ*-1.40*10-3)
RT =0.023+(TJ*2.71*10-4)
Mouser Electronics
Authorized Distributor
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C4D20120A