SS
D
G
(All Leads)
40
20
44
19
4
70
180 Min.
Excelics EPA018A-70
DATA SHEET
High Efficiency Heterojunction Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +20.0dBm TYPICAL OUTPUT POWER
• 11.0dB TYPICAL POWER GAIN AT 18GHz
• TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED
GAIN AT 12GHz
• 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY,
AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P1dB Output Power at 1dB Co mpression f=12GHz
Vds=6V, Ids=50% Idss f=18GHz 18.5 20.0
20.0 dBm
G1dB Gain at 1dB Compression f=12GHz
Vds=6V, Ids=50% Idss f=18GHz 11.0 13.5
11.0 dB
PAE Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss f=12GHz
45 %
NF Noise Figure f=12GHz
Vds=2V, Ids=15mA 0.75 dB
Ga Associated Gain f=12GHz
Vds=2V, Ids=15mA 12.5 dB
Idss Saturated Drain Current Vds=3V, Vgs=0V 30 55 80 mA
Gm Tran sconductance Vds=3V, Vgs=0V 35 60 mS
Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0 -2.5 V
BVgd Drain Breakdown Voltage Igd=1.0mA -9 -15 V
BVgs Source Breakdown Voltage Igs=1.0mA -6 -14 V
Rth Thermal Resistance 480* oC/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds Drain-Source Voltage 10V 6V
Vgs
Gate-Source Voltage -6V -3V
Ids
Drain Current Idss 40mA
Igsf
Forward Gate Current 9mA 1.5mA
Pin Input Power 16dBm @ 3dB Compression
Tch Channel Temperature 175oC 150 oC
Tstg Stor age Temperature -65/ 175oC -65/150 oC
Pt Total Power Dissipation 285mW 240mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design go als.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
All Dimensions In mils .