SA636 Low voltage high performance mixer FM IF system with high-speed RSSI Rev. 7 -- 16 June 2016 Product data sheet 1. General description The SA636 is a low-voltage high performance monolithic FM IF system with high-speed RSSI incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, logarithmic Received Signal Strength Indicator (RSSI), voltage regulator, wideband data output and fast RSSI op amps. The SA636 is available in 20-lead SSOP (Shrink Small Outline Package) and HVQFN20 (quad flat package). The SA636 was designed for high bandwidth portable communication applications and will function down to 2.7 V. The RF section is similar to the famous SA605. The data output has a minimum bandwidth of 600 kHz. This is designed to demodulate wideband data. The RSSI output is amplified. The RSSI output has access to the feedback pin. This enables the designer to adjust the level of the outputs or add filtering. SA636 incorporates a power-down mode which powers down the device when POWER_DOWN_CTRL pin is LOW. Power-down logic levels are CMOS and TTL compatible with high input impedance. 2. Features and benefits Wideband data output (600 kHz minimum) Fast RSSI rise and fall times Low power consumption: 6.5 mA typical at 3 V Mixer input to >500 MHz Mixer conversion power gain of 11 dB at 240 MHz Mixer noise figure of 12 dB at 240 MHz XTAL oscillator effective to 150 MHz (LC oscillator to 1 GHz local oscillator can be injected) 92 dB of IF amp/limiter gain 25 MHz limiter small signal bandwidth Temperature compensated logarithmic Received Signal Strength Indicator (RSSI) with a dynamic range in excess of 90 dB RSSI output internal op amp Internal op amps with rail-to-rail outputs Low external component count; suitable for crystal/ceramic/LC filters Excellent sensitivity: 0.54 V into 50 matching network for 12 dB SINAD (Signal-to-Noise And Distortion ratio) for 1 kHz tone with RF at 240 MHz and IF at 10.7 MHz 10.7 MHz filter matching (330 ) Power-down mode (ICC = 200 A) SA636 NXP Semiconductors Low voltage high performance mixer FM IF system ESD protection exceeds 2000 V HBM per JESD22-A114 and 1000 V CDM per JESD22-C101 Latch-up testing is done to JEDEC Standard JESD78 Class II, Level B 3. Applications DECT (Digital European Cordless Telephone) Digital cordless telephones Digital cellular telephones Portable high performance communications receivers Single conversion VHF/UHF receivers FSK and ASK data receivers Wireless LANs 4. Ordering information Table 1. Ordering information Type number Topside mark Package SA636BS 636B HVQFN20 plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 4 0.85 mm SOT917-1 SA636DK/01 SA636DK SSOP20 SOT266-1 SA636 Product data sheet Name Description Version plastic shrink small outline package; 20 leads; body width 4.4 mm All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 2 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system IF amp limiter quad mixer FAST RSSI OSC POWER DOWN SA636 Product data sheet QUADRATURE IN DATA_OUT POWER_DOWN_CTRL RSSI_OUT OSC_IN audio RSSI RSSI_FEEDBACK B VCC E OSC_OUT RF_IN_DECOUPL RF_IN VCC Fig 1. LIMITER_OUT LIMITER_DECOUPL LIMITER_DECOUPL LIMITER_IN GND IF_AMP_OUT IF_AMP_DECOUPL IF_AMP_IN IF_AMP_DECOUPL MIXER_OUT 5. Block diagram 002aaf661 Block diagram of SA636 All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 3 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 6. Pinning information 6.1 Pinning RF_IN 1 20 MIXER_OUT RF_IN_DECOUPL 2 19 IF_AMP_DECOUPL OSC_OUT 3 18 IF_AMP_IN OSC_IN 4 17 IF_AMP_DECOUPL VCC 5 RSSI_FEEDBACK 6 RSSI_OUT 7 14 LIMITER_IN POWER_DOWN_CTRL 8 13 LIMITER_DECOUPL DATA_OUT 9 12 LIMITER_DECOUPL 16 IF_AMP_OUT SA636DK/01 15 GND QUADRATURE_IN 10 11 LIMITER_OUT 002aaf660 16 IF_AMP_IN 17 IF_AMP_DECOUPL 18 MIXER_OUT terminal 1 index area 19 RF_IN 20 RF_IN_DECOUPL Pin configuration for SSOP20 OSC_OUT 1 15 IF_AMP_DECOUPL OSC_IN 2 14 IF_AMP_OUT 13 GND 12 LIMITER_IN 11 LIMITER_DECOUPL 9 LIMITER_DECOUPL 10 8 DAP(1) LIMITER_OUT 5 QUADRATURE_IN RSSI_OUT SA636BS 7 4 6 3 DATA_OUT VCC AUDIO_FEEDBACK POWER_DOWN Fig 2. 002aag294 Transparent top view (1) Die Attach Paddle (DAP). Fig 3. SA636 Product data sheet Pin configuration for HVQFN20 All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 4 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 6.2 Pin description Table 2. Pin description Symbol Product data sheet Description SSOP20 HVQFN20 RF_IN 1 19 RF input RF_IN_DECOUPL 2 20 RF input decoupling pin OSC_OUT 3 1 oscillator output (emitter) OSC_IN 4 2 oscillator input (base) VCC 5 3 positive supply voltage RSSI_FEEDBACK 6 4 RSSI amplifier negative feedback terminal RSSI_OUT 7 5 RSSI output POWER_DOWN_CTRL 8 6 power-down control; active HIGH DATA_OUT 9 7 data output QUADRATURE_IN 10 8 quadrature detector input terminal LIMITER_OUT 11 9 limiter amplifier output LIMITER_DECOUPL 12 10 limiter amplifier decoupling pin LIMITER_DECOUPL 13 11 limiter amplifier decoupling pin LIMITER_IN 14 12 limiter amplifier input GND 15 13[1] ground; negative supply IF_AMP_OUT 16 14 IF amplifier output IF_AMP_DECOUPL 17 15 IF amplifier decoupling pin IF_AMP_IN 18 16 IF amplifier input IF_AMP_DECOUPL 19 17 IF amplifier decoupling pin MIXER_OUT 20 18 mixer output - - DAP exposed die attach paddle; connect to ground [1] SA636 Pin For the HVQFN20 package, the exposed die attach paddle must be connected to device ground pin 13 and the PCB ground plane. GND pin must be connected to supply ground for proper device operation. For enhanced thermal, electrical, and board level performance, the exposed pad needs to be soldered to the board using a corresponding thermal pad on the board and for proper heat conduction through the board, thermal vias need to be incorporated in the printed-circuit board in the thermal pad region. All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 5 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 7. Functional description The SA636 is an IF signal processing system suitable for second IF or single conversion systems with input frequency as high as 1 GHz. The bandwidth of the IF amplifier is about 40 MHz with 38 dB of gain from a 50 source. The bandwidth of the limiter is about 28 MHz with about 54 dB of gain from a 50 source. However, the gain/bandwidth distribution is optimized for 10.7 MHz, 330 source applications. The overall system is well-suited to battery operation as well as high performance and high-quality products of all types such as cordless and cellular hand-held phones. The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include a noise figure of 14 dB, conversion gain of 11 dB, and input third-order intercept of 16 dBm. The oscillator will operate in excess of 1 GHz in L/C tank configurations. Hartley or Colpitts circuits can be used up to 100 MHz for crystal configurations. Butler oscillators are recommended for crystal configurations up to 150 MHz. The output of the mixer is internally loaded with a 330 resistor permitting direct connection to a 10.7 MHz ceramic filter for narrowband applications. The input resistance of the limiting IF amplifiers is also 330 . With most 10.7 MHz ceramic filters and many crystal filters, no impedance matching network is necessary. For applications requiring wideband IF filtering, such as DECT, external LC filters are used (see Figure 15). To achieve optimum linearity of the log signal strength indicator, there must be a 6 dBV insertion loss between the first and second IF stages. If the IF filter or interstage network does not cause 6 dBV insertion loss, a fixed or variable resistor can be added between the first IF output (IF_AMP_OUT) and the interstage network. The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector. One port of the Gilbert cell is internally driven by the IF. The other output of the IF is AC-coupled to a tuned quadrature network. This signal, which now has a 90 phase relationship to the internal signal, drives the other port of the multiplier cell. Overall, the IF section has a gain of 90 dB for operation at intermediate frequency at 10.7 MHz. Special care must be given to layout, termination, and interstage loss to avoid instability. The demodulated output (DATA_OUT) of the quadrature is a voltage output. This output is designed to handle a minimum bandwidth of 600 kHz. This is designed to demodulate wideband data, such as in DECT applications. A Received Signal Strength Indicator (RSSI) completes the circuitry. The output range is greater than 90 dB and is temperature compensated. This log signal strength indicator exceeds the criteria for AMPS or TACS cellular telephone, DECT and RCR-28 cordless telephone. This signal drives an internal op amp. The op amp is capable of rail-to-rail output. It can be used for gain, filtering, or second-order temperature compensation of the RSSI, if needed. Remark: dBV = 20log VO/VI. SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 6 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 8. Internal circuitry Table 3. Internal circuits for each pin Pin numbers shown for SSOP20 package; HVQFN20 pins shown in parentheses in `Pin' column. Symbol Pin DC V RF_IN 1 (19) +1.07 V RF_IN_DECOUPL 2 (20) +1.07 V Equivalent circuit 0.8 k 0.8 k 1 2 002aac983 OSC_OUT 3 (1) +1.57 V OSC_IN 4 (2) +2.32 V 18 k 4 MIX 3 002aac984 5 (3) VCC +3.00 V VREF 5 BANDGAP 002aac985 RSSI_FEEDBACK 6 (4) +0.20 V VCC 6 - + 002aac986 SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 7 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system Table 3. Internal circuits for each pin ...continued Pin numbers shown for SSOP20 package; HVQFN20 pins shown in parentheses in `Pin' column. Symbol Pin DC V RSSI_OUT 7 (5) +0.20 V Equivalent circuit VCC 7 002aac988 POWER_DOWN_CTRL 8 (6) +2.75 V R 8 R 002aac989 DATA_OUT 9 (7) +1.09 V VCC 9 002aac990 QUADRATURE_IN 10 (8) +3.00 V 80 k 10 20 A 002aac991 LIMITER_OUT 11 (9) +1.35 V 11 8.8 k 002aac992 SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 8 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system Table 3. Internal circuits for each pin ...continued Pin numbers shown for SSOP20 package; HVQFN20 pins shown in parentheses in `Pin' column. Symbol Pin DC V LIMITER_DECOUPL 12 (10) +1.23 V LIMITER_DECOUPL 13 (11) +1.23 V LIMITER_IN 14 (12) +1.23 V Equivalent circuit 14 330 50 A 13 12 002aac993 GND 15 (13) 0 V IF_AMP_OUT 16 (14) +1.22 V - 140 16 8.8 k 002aac994 IF_AMP_DECOUPL 17 (15) +1.22 V IF_AMP_IN 18 (16) +1.22 V IF_AMP_DECOUPL 19 (17) +1.22 V 18 330 50 A 19 17 002aac995 MIXER_OUT 20 (18) +1.03 V 110 20 400 A 002aac996 SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 9 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 9. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VCC Conditions Min Max Unit supply voltage 0.3 7 V Vn voltage on any other pin 0.3 VCC + 0.3 V Tstg storage temperature 65 +150 C Tamb ambient temperature 40 +85 C operating 10. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Max Unit Zth(j-a) transient thermal impedance from junction to ambient SA636DK/01 (SSOP20) 117 K/W SA636BS (HVQFN20) 40 K/W Conditions Min Max Unit 11. Static characteristics Table 6. Static characteristics VCC = 3 V; Tamb = 25 C; unless otherwise specified. Symbol Parameter Typ VCC supply voltage 2.7 3.0 5.5 V ICC supply current DC current drain; POWER_DOWN_CTRL = HIGH 5.5 6.5 7.5 mA II input current POWER_DOWN_CTRL = LOW 10 - +10 A POWER_DOWN_CTRL = HIGH 10 - +10 A VI input voltage POWER_DOWN_CTRL = LOW 0 - 0.3 VCC V POWER_DOWN_CTRL = HIGH 0.7 VCC - VCC V - 0.2 0.5 mA ICC(stb) standby supply current POWER_DOWN_CTRL = LOW tON power-up time RSSI valid (10 % to 90 %) - 10 - s tOFF power-down time RSSI invalid (90 % to 10 %) - 5 - s SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 10 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 12. Dynamic characteristics Table 7. Dynamic characteristics Tamb = 25 C; VCC = +3 V, unless otherwise stated. RF frequency = 240.05 MHz + 14.5 dBV RF input step-up; IF frequency = 10.7 MHz; RF level = 45 dBm; FM modulation = 1 kHz with 125 kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 19. The parameters listed below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters. Symbol Parameter Conditions Min Typ Max Unit Mixer/oscillator section (external LO = 160 mV RMS value) fi input frequency - 500 - MHz fosc oscillator frequency external oscillator (buffer) - 500 - MHz NF noise figure at 240 MHz - 12 - dB IP3i input third-order intercept point matched f1 = 240.05 MHz; f2 = 240.35 MHz - 16 - dBm Gp(conv) conversion power gain matched 14.5 dBV step-up 8 11 14 dB Ri(RF) RF input resistance single-ended input - 700 - Ci(RF) RF input capacitance - 3.5 - pF Ro(mix) mixer output resistance MIXER_OUT pin - - - Gamp(IF) IF amplifier gain 330 load - 38 - dB Glim limiter gain 330 load - 54 - dB Pi(IF) IF input power for 3 dB input limiting sensitivity; test at IF_AMP_IN pin - 105 - dBm AM AM rejection 80 % AM 1 kHz - 40 - dB Vo(RMS) RMS output voltage RL = 100 k 120 130 - mV IF section B3dB 3 dB bandwidth SINAD signal-to-noise-and-distortion ratio THD total harmonic distortion S/N signal-to-noise ratio no modulation for noise Vo(RSSI) RSSI output voltage IF with buffer tr(o) tf(o) output rise time output fall time SA636 Product data sheet 600 700 - kHz - 16 - dB - 43 38 dB - 60 - dB IF level = 118 dBm - 0.2 0.5 V IF level = 68 dBm 0.3 0.6 1.0 V IF level = 10 dBm 0.9 1.3 1.8 V RF level = 56 dBm - 1.2 - s RF level = 28 dBm - 1.1 - s RF level = 56 dBm - 2.0 - s RF level = 28 dBm - 7.3 - s RF level = 111 dBm IF RSSI output; 10 kHz pulse; no 10.7 MHz filter; no RSSI bypass capacitor; IF frequency = 10.7 MHz IF RSSI output; 10 kHz pulse; no 10.7 MHz filter; no RSSI bypass capacitor; IF frequency = 10.7 MHz All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 11 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system Table 7. Dynamic characteristics ...continued Tamb = 25 C; VCC = +3 V, unless otherwise stated. RF frequency = 240.05 MHz + 14.5 dBV RF input step-up; IF frequency = 10.7 MHz; RF level = 45 dBm; FM modulation = 1 kHz with 125 kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 19. The parameters listed below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters. Symbol Parameter Conditions Min Typ Max Unit RSSI(range) RSSI range - 90 - dB RSSI RSSI variation - 1.5 - dB Zi(IF) IF input impedance - 330 - Zo(IF) IF output impedance - 330 - Zi(lim) limiter input impedance - 330 - Zo(lim) limiter output impedance - 300 - Vo(RMS) RMS output voltage limiter output level with no load - 130 - mV RF/IF section (internal LO) Vo(RSSI) RSSI output voltage system; RF level = 10 dBm - 1.4 - V SINAD signal-to-noise-and-distortion ratio system; RF level = 106 dBm - 12 - dB 13. Performance curves ICC (mA) 002aag206 9 VCC = 5.0 V 3.3 V 2.7 V 8 002aag223 0.5 ICC(pd) (mA) 0.4 VCC = 5.0 V 3.3 V 2.7 V 0.3 7 0.2 6 0.1 5 -40 Fig 4. -15 10 35 Supply current versus ambient temperature SA636 Product data sheet 0 -40 60 85 Tamb (C) Fig 5. -15 10 35 60 85 Tamb (C) Power-down mode supply current versus ambient temperature All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 12 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 002aag224 16 Gp(conv) (dB) 14 002aag225 -7 IP3i (dBm) -11 VCC = 5.5 V 3.0 V 2.7 V 12 -15 10 VCC = 5.5 V 3.0 V 2.7 V 8 6 -40 -15 -19 10 35 60 85 Tamb (C) -23 -40 RF level = 45 dBm Fig 6. -15 10 35 60 85 Tamb (C) RF level = 45 dBm Mixer conversion power gain versus ambient temperature Fig 7. 002aag295 300 Mixer input third-order intercept point at 240 MHz versus ambient temperature 002aag296 20 relative level 0 (dB) -20 audio reference (mV) 200 audio AM rejection -40 distortion -60 VCC = 5.5 V 3.0 V 2.7 V 100 noise -80 -100 0 -40 -15 10 35 60 85 Tamb (C) 12 dB SINAD -120 -40 -15 10 35 60 85 Tamb (C) VCC = 3 V; RF = 240 MHz; level = 68 dBm; deviation = 125 kHz Fig 8. Audio reference level versus ambient temperature Fig 9. 002aag300 2.0 Vo(RSSI) (V) 1.6 Vo(RSSI) (V) 1.6 0.8 0.4 0.4 -90 SA636 Product data sheet -70 -50 Tamb = -40 C 25 C 85 C 1.2 0.8 0 -110 002aag301 2.0 Tamb = -40 C 25 C 85 C 1.2 12 dB SINAD and relative audio, THD, noise, and AM rejection versus ambient temperature -30 -10 0 IF level (dBm) 0 -110 -90 All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 -70 -50 -30 -10 0 RF level (dBm) (c) NXP Semiconductors N.V. 2016. All rights reserved. 13 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system Fig 10. RSSI output voltage versus IF level Fig 11. RSSI output voltage versus RF level 002aag297 10 IF output power (dBm) fund product -30 3rd-order product -70 -110 -70 -50 -30 -10 RF input level (dBm) Fig 12. Mixer third-order intercept and compression 10 relative level (dB) -10 002aag227 002aag226 10 relative level (dB) -10 audio AM rejection -30 audio AM rejection -30 THD+N -50 noise -70 -90 -110 THD+N -50 -90 -70 noise -70 -50 -90 -110 -30 -10 0 RF level (dBm) a. Tamb = 40 C; Vo(aud)RMS = 118 mV -90 -70 -50 -30 -10 0 RF level (dBm) b. Tamb = 25 C; Vo(aud)RMS = 129 mV 002aag228 10 relative level (dB) -10 audio AM rejection -30 -50 THD+N noise -70 -90 -110 -90 -70 -50 -30 -10 0 RF level (dBm) c. Tamb = 85 C; Vo(aud)RMS = 131 mV Fig 13. Relative level of audio, AM rejection, THD+N and noise versus RF level SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 14 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 002aag298 0.8 data level (V(p-p)) 0.6 0.8 data level (V(p-p)) 0.6 VCC = 5.5 V 3.0 V 2.7 V 0.4 0.4 0.2 0.2 0 -40 -15 10 35 0 -40 60 85 Tamb (C) a. 600 kHz data rate 002aag299 VCC = 5.5 V 3.0 V 2.7 V -15 10 35 60 85 Tamb (C) b. 1 kHz data rate IF = 9.85 MHz; deviation = 288 kHz; RF = 40 dBm Fig 14. Data level versus ambient temperature 14. Application information SMA RF input J1 C1 5 pF to 30 pF L4 680 nH 110.592 MHz 288 kHz L1 180 nH U1 RF_IN C2 10 nF SMA LO input J2 C4 1 nF 120.392 MHz at -10 dBm RF_IN_DECOUPL OSC_OUT C3 1 nF OSC_IN VCC R1 51 RSSI_FEEDBACK RSSI_OUT R3 22 k +3 V VCC GND J3 R4 33 k R2 10 C5 15 F C6 100 nF POWER_DOWN_CTRL DATA_OUT QUADRATURE_IN 20 1 19 2 3 18 4 17 5 SA636DK/01 16 6 15 7 14 8 13 9 12 10 11 C7 470 pF DATA OUT R5 1.2 k C8 5 pF to 30 pF C9 82 pF L2 2.2 H C21 330 pF C19 IF_AMP_DECOUPL 1 nF C18 68 pF C17 1 nF IF_AMP_IN IF_AMP_DECOUPL IF_AMP_OUT C16 100 pF GND LIMITER_IN C13 100 pF LIMITER_DECOUPL LIMITER_DECOUPL LIMITER_OUT C10 15 pF RSSI PWR DWN MIXER_OUT C20 68 pF C11 1 nF C12 1 nF C14 47 pF C15 330 pF L3 680 nH R6 560 002aag302 Fig 15. SA636 110.592 MHz (RF), 9.8 MHz (IF) DECT application circuit SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 15 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system Table 8. DECT application circuit electrical characteristics RF frequency = 110.592 MHz; IF frequency = 9.8 MHz; RF level = 45 dBm; FM modulation = 100 kHz with 288 kHz peak deviation. Symbol Parameter Conditions Min Typ Max Unit - 13 - dB Mixer/oscillator section (external LO = 160 mV RMS value) Gp(conv) conversion power gain NF noise figure at 110 MHz - 12 - dB IP3i input third-order intercept point matched f1 = 110.592 MHz; f2 = 110.892 MHz - 15 - dBm Ri(RF) RF input resistance - 690 - Ci(RF) RF input capacitance - 3.6 - pF IF section Gamp(IF) IF amplifier gain 330 load - 38 - dB Glim limiter gain 330 load - 54 - dB Vo(RMS) RMS output voltage RL = 3 k - 130 - mV B3dB 3 dB bandwidth - 700 - kHz RF/IF section (internal LO) Vo(RSSI) RSSI output voltage system; RF level = 10 dBm - 1.4 - V S/N signal-to-noise ratio system; RF level = 83 dBm - 10 - dB SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 16 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system RF IN C1 5-30 pF 10 nF C4 R1 1 nF 1 nF 51 180 nH C3 C6 100 nF L4 680 nH 470 pF C7 R5 1.2 k SA636DK 82 pF C20 C9 15 pF C10 68 pF C18 1 nF C11 68 pF C12 1 nF C2 C21 330 pF C19 1 nF C17 C16 1 nF C13 100 pF L1 2.2 H L2 V R P D 47 pF R2 R4 R3 C5 C14 330 pF C15 560 R6 L3 22 k 10 33 k 15 F 100 pF 680 nH LO IN C8 5-30 pF 002aag362 a. Top silk screen 002aag363 b. Top view 002aag364 c. Bottom view Remark: Not actual size. Fig 16. SA636 demo board layout (SSOP20) SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 17 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system RF INPUT 240 MHz X1 SA636BS founded by Philips C3 L2 C1 IF = 10.7 MHz L3 C17 P20 X2 FLT1 C6 P16 RF INPUT 229.3 MHz C7 C8 SA636BS C4 P1 P15 P5 P11 FLT2 P10 P6 U$1 C9 C15 C10 C19 C14 C1A R1A GND AUDIO_DC AUDIO RSSI PD_CTL VCC C5 R19 C2 C18 L1 JP3 002aah532 Fig 17. SA636BS demo board (HVQFN20) SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 18 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system FLT1 10.7 MHz filter 1 2 3 OSC_IN VCC AUDIO_FEEDBACK RSSI_OUT 6 5 4 3 2 1 JP3 C2 6.8 F 4.7 nF 16 IF_AMP_IN IF_AMP_DECOUPL SA636BS 3 13 4 12 5 11 DATA_OUT AUDIO AUDIO_DC GND C1A 17 14 POWER_DOWN VCC RSSI 18 20 2 6 C5 GND 0.1 F 15 R1A 820 GND IF_AMP_DECOUPL C17 0.1 F IF_AMP_OUT GND GND LIMITER_IN GND LIMITER_DECOUPL 10 L3 47 nH 1 9 C9 39 pF OSC_OUT LIMITER_OUT LO input 229.3 MHz RF_IN_DECOUPL C4 1 nF 7 C8 5 pF to 30 pF trim X2 BU-SMA-H 19 C3 1 nF RF_IN GND MIXER_OUT L2 33 nH C7 22 pF 8 GND C1 0.1 F QUADRATURE_IN RF input 240 MHz GND C6 5 pF to 30 pF trim X1 BU-SMA-H LIMITER_ DECOUPL 1 2 3 FLT2 10.7 MHz filter C15 0.1 F C10 0.1 F C18 4.7 pF GND 3 1 C19 39 pF 3 L1 5.6 H 2 4 C14 100 nF GND R19 12 k GND GND 002aah533 Fig 18. SA636BS schematic (HVQFN20) SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 19 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 15. Test information MIXER IF/LIM_OUT IF/LIM_IN R11 R4 C11 2 C16 R2 C12 L5 R9 C20 R7 R6 R3 R8 R5 1 1 19 C17 FL2 2 2 C13 20 R10 C14 FL1 1 1 2 S5 C15 18 C18 17 16 15 14 13 IF amp RSSI 3 C3 4 C21 PWR DWN VCC C1 11 quad OSC 2 12 limiter mixer 1 C19 5 6 7 C4 8 data 9 10 C8 C6 L1 C2 L3 FL3 C5 C9 C7 R1 L4 FL4 L2 VCC LO_IN C10 RF_IN RSSI_OUT POWER_DOWN_CTRL DATA_OUT 002aag360 The layout is very critical in the performance of the receiver. We highly recommend our demo board layout. All of the inductors, the quad tank, and their shield must be grounded. A 0.1 F bypass capacitor on the supply pin improves sensitivity. For the HVQFN20 package, the die attach paddle must be connected to the ground of PCB. Fig 19. 240.05 MHz (RF) / 10.7 MHz (IF) test circuit SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 20 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system Table 9. Component Description R1 7.5 k resistor; select R2, R7 6.49 k resistor R3, R8 347.8 resistor R4, R6, R9, R11 49.9 resistor R5, R10 1 k resistor R12, R14 60.4 resistor R13 249 resistor C1, C4 10 nF capacitor C2 5.6 pF capacitor; select for input match C3, C10, C11, C14, C16, C17, C20, C22 0.1 F capacitor C5 5 pF to 300 pF variable capacitor; Murata TZC3P300A 110R00 C6 100 pF capacitor C7 15 F, 20 V capacitor[1] C8 1 F capacitor C9 39 pF capacitor; select C10, C13, C15, C18, C19 1000 pF capacitor C12 150 pF capacitor; select C21 2.7 pF capacitor L2 27 nH inductor[1]; Coilcraft 1008HT-27NT or Garret PM20-RO27; select for input match L3 39 nH inductor; Coilcraft 1008HQ-39NX; select for input match L4 5.6 H variable, shielded inductor, 5 mm SMD; Toko 613BN-9056Z; select for input match L5 1.27 H to 2.25 H variable shielded inductor; 5 mm SMD; select for mixer output match FL1, FL2 10.7 MHz filter (Murata SFE10.7MA5-A) FL3 `C' message weighted filter FL4 active de-emphasis filter [1] SA636 Product data sheet Automatic test circuit component list This value can be reduced when a battery is the power source. All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 21 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system RF GENERATOR(1) 110.592 MHz SA636 DEMOBOARD(2) RSSI DATA LO / GENERATOR 120.392 MHz VCC (+3 V) DC VOLTMETER SCOPE SPECTRUM ANALYZER 002aag361 (1) Set your RF generator at 110.592 MHz; use a 100 kHz modulation frequency and a 288 kHz deviation. (2) The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and design. If the lowest RSSI voltage is 500 mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity will be worse than expected. Fig 20. Application circuit test setup SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 22 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 16. Package outline SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm D SOT266-1 E A X c y HE v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index Lp L 1 10 detail X w M bp e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.5 0.15 0 1.4 1.2 0.25 0.32 0.20 0.20 0.13 6.6 6.4 4.5 4.3 0.65 6.6 6.2 1 0.75 0.45 0.65 0.45 0.2 0.13 0.1 0.48 0.18 10 o o 0 Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT266-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 MO-152 Fig 21. Package outline SOT266-1 (SSOP20) SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 23 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system HVQFN20: plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 x 4 x 0.85 mm B D SOT917-1 A terminal 1 index area A E A1 c detail X C e1 e b 6 10 y y1 C v M C A B w M C L 11 5 e Eh e2 1 15 terminal 1 index area 20 16 Dh X 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D(1) Dh E(1) Eh e e1 e2 L v w y y1 mm 1 0.05 0.00 0.30 0.18 0.2 4.1 3.9 2.45 2.15 4.1 3.9 2.45 2.15 0.5 2 2 0.6 0.4 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT917 -1 --- MO-220 --- EUROPEAN PROJECTION ISSUE DATE 05-10-08 05-10-31 Fig 22. Package outline SOT917-1 (HVQFN20) SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 24 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 17. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 "Surface mount reflow soldering description". 17.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 17.2 Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following: * Through-hole components * Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are: * * * * * * Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus SnPb soldering 17.3 Wave soldering Key characteristics in wave soldering are: * Process issues, such as application of adhesive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave * Solder bath specifications, including temperature and impurities SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 25 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 17.4 Reflow soldering Key characteristics in reflow soldering are: * Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 23) than a SnPb process, thus reducing the process window * Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board * Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 10 and 11 Table 10. SnPb eutectic process (from J-STD-020D) Package thickness (mm) Package reflow temperature (C) Volume (mm3) < 350 350 < 2.5 235 220 2.5 220 220 Table 11. Lead-free process (from J-STD-020D) Package thickness (mm) Package reflow temperature (C) Volume (mm3) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 23. SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 26 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system maximum peak temperature = MSL limit, damage level temperature minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 23. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 "Surface mount reflow soldering description". 18. Abbreviations Table 12. SA636 Product data sheet Abbreviations Acronym Description AMPS Advanced Mobile Phone System ASK Amplitude Shift Keying BER Bit Error Rate CDM Charged-Device Model CMOS Complementary Metal-Oxide Semiconductor DECT Digital European Cordless Telephone ESD ElectroStatic Discharge FM Frequency Modulation FSK Frequency Shift Keying HBM Human Body Model IF Intermediate Frequency LAN Local Area Network LC inductor-capacitor filter RCR Research and development Center for Radio systems RF Radio Frequency RSSI Received Signal Strength Indicator SINAD Signal-to-Noise And Distortion ratio SMD Surface Mount Device TACS Total Access Communication System All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 27 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system Table 12. Abbreviations ...continued Acronym Description TTL Transistor-Transistor Logic UHF Ultra High Frequency VHF Very High Frequency 19. Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes SA636 v.7 20160616 Product data sheet - SA636 v.6 Modifications: SA636 v.6 Modifications: * Figure 2 "Pin configuration for SSOP20": Corrected pin assignments for OSC_IN and OSC_OUT; no change to device. 20121205 * Product data sheet - SA636 v.5 Table 2 "Pin description": - appended "connect to ground" to description of DAP (HVQFN20) - Table note [1]: first sentence is re-written * Figure 19 "240.05 MHz (RF) / 10.7 MHz (IF) test circuit": added 3rd paragraph (just above figure title) * * Added Figure 17 "SA636BS demo board (HVQFN20)" Added Figure 18 "SA636BS schematic (HVQFN20)" SA636 v.5 20120724 Product data sheet - SA636 v.4 SA636 v.4 20110909 Product data sheet - SA636 v.3 SA636 v.3 20030801 Product data ECN 853-1757 30101 SA636 v.2 dated 15 Jul 2003 SA636 v.2 19971107 Product data ECN 853-1757 18664 SA636 v.1 dated 07 Nov 1997 SA636 v.1 19940616 Product specification ECN 853-1757 13150 dated 07 Nov 1997 SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 28 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 20. Legal information 20.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 20.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 20.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. SA636 Product data sheet Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 29 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 20.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 21. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com SA636 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 -- 16 June 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 30 of 31 SA636 NXP Semiconductors Low voltage high performance mixer FM IF system 22. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 17 17.1 17.2 17.3 17.4 18 19 20 20.1 20.2 20.3 20.4 21 22 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5 Functional description . . . . . . . . . . . . . . . . . . . 6 Internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . . 7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal characteristics . . . . . . . . . . . . . . . . . 10 Static characteristics. . . . . . . . . . . . . . . . . . . . 10 Dynamic characteristics . . . . . . . . . . . . . . . . . 11 Performance curves . . . . . . . . . . . . . . . . . . . . 12 Application information. . . . . . . . . . . . . . . . . . 15 Test information . . . . . . . . . . . . . . . . . . . . . . . . 20 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 23 Soldering of SMD packages . . . . . . . . . . . . . . 25 Introduction to soldering . . . . . . . . . . . . . . . . . 25 Wave and reflow soldering . . . . . . . . . . . . . . . 25 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 25 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 26 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 28 Legal information. . . . . . . . . . . . . . . . . . . . . . . 29 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 29 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Contact information. . . . . . . . . . . . . . . . . . . . . 30 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP Semiconductors N.V. 2016. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 June 2016 Document identifier: SA636