SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS – BCX17 – T1
BCX17R – T4
COMPLIMENTARY TYPES - BCX19
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage VCES -50 V
Collector-Emitter Voltage (IC =-10mA) VCEO -45 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-500 mA
Peak Collector Current ICM -1000 mA
Peak Emitter Current IEM -1000 mA
Base Current IB-100 mA
Peak Base Current IBM -200 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current ICBO -100
-200 nA
µAIE =0, VCB
=-20V
IE =0, VCB
=-20V, Tj=150°C
Emitter-Base Cut-Off
Current IEBO -10 µAIC =0, VEB =-1V
Base-Emitter Voltage VBE -1.2 V IC =-500mA, VCE =-1V*
Collector-Emitter
Saturation Voltage VCE(sat) -620 mV IC =-500mA, IB =-50mA*
Static Forward Current
Transfer Ratio hFE 100
70
40
600 IC =-100mA, VCE =-1V
IC =-300mA, VCE =-1V*
IC =-500mA, VCE =-1V*
Transition Frequency fT100 MHz IC =-10mA, VCE =-5V
f =35MHz
Output Capacitance Cobo 8.0 pF VCB =-10V, f =1MHz
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
BCX17
C
B
E
SOT23
TBA
