1
Subject to change without notice.
www.cree.com
FEATURES
• RectangularLEDRfPerformance
− 450&460nm
� TR-30™–30mWmin.
• EpoxyDieAttach
• LowForwardVoltage-3.2VTypicalat20mA
• 1000-VESDThresholdRating
• InGaNJunctiononThermallyConductiveSiC
Substrate
APPLICATIONS
• SmallLCDBacklighting–0.8mm&0.6mm
sideviewpackages
− MobileAppliances
− DigitalCameras
− CarNavigationSystems
• MediumLCDBacklighting–0.8mm&0.6mm
sideviewpackages
− PortablePCs
− Monitors
• LEDVideoDisplays
• GeneralIllumination
TR300™ LEDs
CxxxTR3041-Sxx00
Data Sheet
Cree’sTR™LEDsarethenewestgenerationofsolid-stateLEDemittersthatcombinehighlyefcientInGaNmaterials
withCree’sproprietarydevicetechnologyandsiliconcarbidesubstratestodeliversuperiorvaluefortheLCDsideview
market.TheTRLEDsareamongthebrightestinthesideviewmarketwhiledeliveringalowforwardvoltageresultingin
averybrightandhighlyefcientsolutionforthe0.6-mmand0.8-mmsideviewmarket.Thedesignisoptimallysuited
forindustrystandardsideviewpackagesasitisdieattachablewithclearepoxyandhastwotopcontacts,consistent
withindustrystandardpackaging.
CxxxTR3041-Sxx00 Chip Diagram
Data Sheet: CPR3DV Rev. -
Top View Bottom View Die Cross Section
Anode(+)
80μmdiameter
TR300LED
300x410μm
Backside
t=140μm
BottomSurface
155x265μm
Cathode(-)
98x98μm
Copyright©2008Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe
Creelogoareregisteredtrademarks,andTR,TR30andTR300aretrademarksofCree,Inc.
2CPR3DV Rev. -
Cree,Inc.
4600SiliconDrive
Durham,NC27703
USATel:+1.919.313.5300
www.cree.com
Maximum Ratings at TA = 25°C Notes 1&3 CxxxTR3041-Sxx00
DCForwardCurrent 50mA
PeakForwardCurrent(1/10dutycycle@1kHz) 100mA
LEDJunctionTemperature 125°C
ReverseVoltage 5V
OperatingTemperatureRange -40°Cto+100°C
StorageTemperatureRange -40°Cto+100°C
ElectrostaticDischargeThreshold(HBM)Note2 1000V
ElectrostaticDischargeClassication(MIL-STD-883E)Note2 Class2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Note 3
Part Number Forward Voltage (Vf, V) Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min. Typ. Max. Max. Typ.
C450TR3041-Sxx00 2.7 3.2 3.7 2 20
C460TR3041-Sxx00 2.7 3.2 3.7 2 21
Mechanical Specications CxxxTR3041-Sxx00
Description Dimension Tolerance
P-NJunctionArea(μm) 260x370 ±35
ChipArea(μm) 300x410 ±35
ChipThickness(μm) 140 ±15
AuBondPadDiameterAnode(μm) 80 -5,+15
AuBondPadThicknesses(μm) 1.0 ±0.5
AuBondPadAreaCathode(μm) 98x98 -5,+15
BottomArea(μm) 155x265 ±35
Notes:
1. Maximumratingsarepackagedependent.TheaboveratingsweredeterminedusingaT-13/4package(withHysolOS4000epoxy
encapsulationandclearepoxydieattach)forcharacterization.Ratingsforotherpackagesmaydiffer.Theforwardcurrents(DC
andPeak)arenotlimitedbythediebutbytheeffectoftheLEDjunctiontemperatureonthepackage.Thejunctiontemperature
limitof125°CisalimitoftheT-13/4package;junctiontemperatureshouldbecharacterizedinaspecicpackagetodetermine
limitations.Assemblyprocessingtemperaturemustnotexceed325°C(<5seconds).
2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalanche
energytest(RAET).TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown.
3. Allproductsconformtothelistedminimumandmaximumspecicationsforelectricalandopticalcharacteristicswhenassembled
andoperatedat20mAwithinthemaximumratingsshownabove.Efciencydecreasesathighercurrents.Typicalvaluesgiven
arewithintherangeofaveragevaluesexpectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.All
measurementsweremadeusinglampsinT-13/4packages(withHysolOS4000epoxyencapsulantandclearepoxydieattach).
OpticalcharacteristicsmeasuredinanintegratingsphereusingIlluminanceE.
Copyright©2008Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe
Creelogoareregisteredtrademarks,andTR,TR30andTR300aretrademarksofCree,Inc.
3CPR3DV Rev. -
Cree,Inc.
4600SiliconDrive
Durham,NC27703
USATel:+1.919.313.5300
www.cree.com
Standard Bins for CxxxTR3041-Sxx00
LEDchipsaresortedtotheradiant uxanddominant wavelengthbinsshown.Asorteddiesheetcontainsdiefrom
onlyonebin.Sorteddiekit(CxxxTR3041-Sxxxx)ordersmaybelledwithanyorallbins(CxxxTR3041-xxxx)contained
inthekit.AllradiantuxanddominantwavelengthvaluesshownandspeciedareatIf=20mA.
Dominant Wavelength
TR-30
C450TR3041-S3000
C450TR3041-0209 C450TR3041-0210 C450TR3041-0211 C450TR3041-0212
C450TR3041-0205 C450TR3041-0206 C450TR3041-0207 C450TR3041-0208
C450TR3041-0201 C450TR3041-0202 C450TR3041-0203 C450TR3041-0204
447.5nm 450nm 452.5nm445nm 455nm
35.0mW
33.0mW
30.0mW
Radiant Flux
TR-30
C460TR3041-S3000
C460TR3041-0209 C460TR3041-0210 C460TR3041-0211 C460TR3041-0212
C460TR3041-0205 C460TR3041-0206 C460TR3041-0207 C460TR3041-0208
C460TR3041-0201 C460TR3041-0202 C460TR3041-0203 C460TR3041-0204
Dominant Wavelength
457.5nm 460nm 462.5nm455nm 465nm
35.0mW
33.0mW
30.0mW
Radiant Flux
Copyright©2008Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe
Creelogoareregisteredtrademarks,andTR,TR30andTR300aretrademarksofCree,Inc.
4CPR3DV Rev. -
Cree,Inc.
4600SiliconDrive
Durham,NC27703
USATel:+1.919.313.5300
www.cree.com
Characteristic Curves
ThesearerepresentativemeasurementsfortheTRLEDproduct.Actualcurveswillvaryslightlyforthevariousradiant
uxanddominantwavelengthbins.
Copyright © 2007, Cree, Inc. pg. 1
Characterization
0
20
40
60
80
100
120
320
420
520
620
Relative Intensity (%)
Wavelength (nm)
Relative Intensity vs Peak Wavelength
Relative Intensity vs Forward Voltage
0
20
40
60
80
100
120
140
160
180
200
220
0 10 20 30 40 50
% Relative Intensity
0.00
0.50
1.00
1.50
2.00
2.50
0 10 20 30 40 50
% Intensity
If (mA)
Relative Intensity vs. Forward Current
0
10
20
30
40
50
012345
If (mA)
Vf (V)
Forward Current vs. Forward Voltage
0.00
0.50
1.00
1.50
2.00
2.50
0 10 20 30 40 50
% Intensity
If (mA)
Relative Intensity vs. Forward Current
0
10
20
30
40
50
012345
If (mA)
Vf (V)
Forward Current vs. Forward Voltage
-2.00
-1.50
-1.00
-0.50
0.00
0.50
1.00
1.50
0 10 20 30 40 50
Shift (nm)
If (mA)
Wavelength Shift vs. Forward Current
Relative Intensity vs Peak Wavelength
Copyright©2008Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe
Creelogoareregisteredtrademarks,andTR,TR30andTR300aretrademarksofCree,Inc.
5CPR3DV Rev. -
Cree,Inc.
4600SiliconDrive
Durham,NC27703
USATel:+1.919.313.5300
www.cree.com
Radiation Pattern
ThisisarepresentativeradiationpatternfortheTRLEDproduct.Actualpatternswillvaryslightlyforeachchip.