HAL501...506, 508, 509,
HAL516...519, 523
6251-109-4E
Edition Feb. 14, 2001
6251-485-2DS
MICRONASMICRONASMICRONASMICRONAS
MICRONAS
Hall Effect Sensor Family
HAL5xx
2 Micronas
Contents
Page Section Title
3 1. Introduction
3 1.1. Features
3 1.2. Family Overview
4 1.3. Marking Code
4 1.3.1. Special Marking of Prototype Parts
4 1.4. Operating Junction Temperature Range
4 1.5. Hall Sensor Package Codes
4 1.6. Solderability
5 2. Functional Description
6 3. Specifications
6 3.1. Outline Dimensions
6 3.2. Dimensions of Sensitive Area
6 3.3. Positions of Sensitive Areas
7 3.4. Absolute Maximum Ratings
7 3.5. Recommended Operating Conditions
8 3.6. Electrical Characteristics
9 3.7. Magnetic Characteristics Overview
14 4. Type Descriptions
14 4.1. HAL501
16 4.2. HAL502
18 4.3. HAL503
20 4.4. HAL504
22 4.5. HAL505
24 4.6. HAL506
26 4.7. HAL508
28 4.8. HAL509
30 4.9. HAL516
32 4.10. HAL517
34 4.11. HAL518
36 4.12. HAL519
38 4.13. HAL523
40 5. Application Notes
40 5.1. Ambient Temperature
40 5.2. Extended Operating Conditions
40 5.3. Start-up Behavior
40 5.4. EMC
44 6. Data Sheet History
HAL5xx
3Micronas
Hall Effect Sensor Family
in CMOS technology
Release Notes: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL5xx family consists of different Hall switches
produced in CMOS technology. All sensors include a
temperature-compensated Hall plate with active offset
compensation, a comparator, and an open-drain output
transistor. The comparator compares the actual mag-
netic flux through the Hall plate (Hall voltage) with the
fixed reference values (switching points). Accordingly,
the output transistor is switched on or off.
The sensors of this family differ in the switching behavior
and the switching points.
The active offset compensation leads to constant mag-
netic characteristics over supply voltage and tempera-
ture range. In addition, the magnetic parameters are ro-
bust against mechanical stress effects.
The sensors are designed for industrial and automotive
applications and operate with supply voltages from
3.8 V to 24 V in the ambient temperature range from
–40 °C up to 150 °C.
All sensors are available in a SMD-package (SOT-89B)
and in a leaded version (TO-92UA).
1.1. Features:
– switching offset compensation at typically 62 kHz
– operates from 3.8 V to 24 V supply voltage
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust against mechani-
cal stress effects
– short-circuit protected open-drain output by thermal
shut down
– operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
– constant switching points over a wide supply voltage
range
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the mag-
netic characteristics
– ideal sensor for applications in extreme automotive
and industrial environments
– EMC corresponding to DIN 40839
1.2. Family Overview
The types differ according to the magnetic flux density
values for the magnetic switching points, the tempera-
ture behavior of the magnetic switching points, and the
mode of switching.
Type Switching
Behavior Sensitivity see
Page
501 bipolar very high 14
502 latching high 16
503 latching medium 18
504 unipolar medium 20
505 latching low 22
506 unipolar high 24
508 unipolar medium 26
509 unipolar low 28
516 unipolar with
inverted output high 30
517 unipolar with
inverted output medium 32
518 unipolar with
inverted output medium 34
519 unipolar with
inverted output
(north polarity)
high 36
523 unipolar low 38
Latching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
does not change if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
Bipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is
removed again. Some sensors will change the output
state and some sensors will not.
HAL5xx
4 Micronas
Unipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the mag-
netic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
Unipolar Switching Sensors with Inverted Output:
The output turns high with the magnetic south pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not respond
to the magnetic north pole on the branded side.
Unipolar Switching Sensors with Inverted Output
Sensitive to North Pole:
The output turns high with the magnetic north pole on the
branded side of the package and turns low if the magnet-
ic field is removed. The sensor does not respond to the
magnetic south pole on the branded side.
1.3. Marking Code
All Hall sensors have a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type Temperature Range
A K E
HAL501 501A 501K 501E
HAL502 502A 502K 502E
HAL503 503A 503K 503E
HAL504 504A 504K 504E
HAL505 505A 505K 505E
HAL506 506A 506K 506E
HAL508 508A 508K 508E
HAL509 509A 509K 509E
HAL516 516A 516K 516E
HAL517 517A 517K 517E
HAL518 518A 518K 518E
HAL519 519A 519K 519E
HAL523 523A 523K 523E
1.3.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath the
temperature range letter on each IC. They may be used
for lab experiments and design-ins but are not intended to
be used for qualification tests or as production parts.
1.4. Operating Junction Temperature Range
A: TJ = –40 °C to +170 °C
K: TJ = –40 °C to +140 °C
E: TJ = –40 °C to +100 °C
The Hall sensors from Micronas are specified to the chip
temperature (junction temperature TJ).
The relationship between ambient temperature (TA) and
junction temperature is explained in section 5.1. on page
40.
1.5. Hall Sensor Package Codes
Type: 5xx
HALXXXPA-T Temperature Range: A, K, or E
Package: SF for SOT-89B
UA for TO-92UA
→ Type: 505
→ Package: TO-92UA
→ Temperature Range: TJ = –40 °C to +100 °C
Example: HAL505UA-E
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.
1.6. Solderability
all packages: according to IEC68-2-58
During soldering reflow processing and manual rework-
ing, a component body temperature of 260 °C should
not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as
extreme as 40 °C and 90% relative humidity.
OUT
GND
3
2
1VDD
Fig. 1–1: Pin configuration
HAL5xx
5Micronas
2. Functional Description
The HAL5xx sensors are monolithic integrated circuits
which switch in response to magnetic fields. If a
magnetic field with flux lines perpendicular to the
sensitive area is applied to the sensor, the biased Hall
plate forces a Hall voltage proportional to this field. The
Hall voltage is compared with the actual threshold level
in the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the magnetic field
exceeds the threshold levels, the open drain output
switches to the appropriate state. The built-in hysteresis
eliminates oscillation and provides switching behavior of
output without bouncing.
Magnetic offset caused by mechanical stress is com-
pensated for by using the “switching offset compensa-
tion technique”. Therefore, an internal oscillator pro-
vides a two phase clock. The Hall voltage is sampled at
the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are aver-
aged and compared with the actual switching point. Sub-
sequently, the open drain output switches to the ap-
propriate state. The time from crossing the magnetic
switching level to switching of output can vary between
zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output-Pin and VDD-Pin together with external series
resistors. Reverse current is limited at the VDD-Pin by an
internal series resistor up to –15 V. No external reverse
protection diode is needed at the VDD-Pin for reverse
voltages ranging from 0 V to –15 V.
Fig. 2–1: HAL5xx block diagram
HAL5xx
Temperature
Dependent
Bias
Switch
Hysteresis
Control
Comparator Output
VDD
1
OUT
3
Clock
Hall Plate
GND
2
HAL5xx
Short Circuit &
Overvoltage
Protection
Reverse
Voltage &
Overvoltage
Protection
t
VOL
VOUT
1/fosc = 16 µs
Fig. 2–2: Timing diagram
VOH
B
BON
fosc
t
t
tft
IDD
t
HAL5xx
6 Micronas
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
4.55
1.7
min.
0.25
2.55
0.40.4
0.4
1.5
3.0
0.06±0.04
branded side
SPGS0022-5-A3/2E
y
123
4±0.2
0.15
0.3 2
∅0.2
sensitive are
a
top view
1.15
3.2. Dimensions of Sensitive Area
0.25 mm x 0.12 mm
3.3. Positions of Sensitive Areas
SOT-89B TO-92UA
xcenter of
the package center of
the package
y0.95 mm nominal 1.0 mm nominal
Fig. 3–2:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
0.75±0.2
3.1±0.2
0.55
branded side
0.36
0.8
0.3
45°
y
14.0
min.
1.271.27
2.54
123
0.42
4.06±0.1
3.05±0.1
0.48
SPGS7002-9-A/2E
∅0.4
sensitive area
1.5
Note: For all package diagrams, a mechanical tolerance
of ±0.05 mm applies to all dimensions where no tolerance
is explicitly given.
An improvement of the TO-92UA package with reduced
tolerances will be introduced end of 2001.
HAL5xx
7Micronas
3.4. Absolute Maximum Ratings
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1–15 281) V
–VPTest Voltage for Supply 1–242) –V
–IDD Reverse Supply Current 1–501) mA
IDDZ Supply Current through
Protection Device 1–2003) 2003) mA
VOOutput Voltage 3–0.3 281) V
IOContinuous Output On Current 3–501) mA
IOmax Peak Output On Current 3–2503) mA
IOZ Output Current through
Protection Device 3–2003) 2003) mA
TSStorage Temperature Range5) –65 150 °C
TJJunction Temperature Range –40
–40 150
1704) °C
1) as long as TJmax is not exceeded
2) with a 220 Ω series resistance at pin 1 corresponding to the test circuit on page 40
3) t<2 ms
4) t<1000h
5) Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as extreme as 40 °C and 90% relative humidity.
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only . Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 3.8 24 V
IOContinuous Output On Current 3 0 20 mA
VOOutput Voltage
(output switched off) 3 0 24 V
HAL5xx
8 Micronas
3.6. Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 3.8 V to 24 V , as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
IDD Supply Current 1 2.3 3 4.2 mA TJ= 25 °C
IDD Supply Current over
Temperature Range 1 1.6 3 5.2 mA
VDDZ Overvoltage Protection
at Supply 1–28.5 32 V IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ Overvoltage Protection at Output 3–28 32 V IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL Output Voltage 3–130 280 mV IOL = 20 mA, TJ= 25 °C
VOL Output Voltage over
Temperature Range 3–130 400 mV IOL = 20 mA
IOH Output Leakage Current 3–0.06 0.1 µAOutput switched off,
TJ = 25 °C, VOH = 3.8 to 24 V
IOH Output Leakage Current over
Temperature Range 3– – 10 µAOutput switched of f,
TJ ≤150 °C, VOH = 3.8 to 24V
fosc Internal Oscillator
Chopper Frequency –49 62 –kHz TJ = 25 °C,
VDD = 4.5 V to 24 V
fosc Internal Oscillator Chopper Fre-
quency over T emperature Range –38 62 –kHz
ten(O) Enable Time of Output after
Setting of VDD 1–30 70 µs VDD = 12 V 1)
trOutput Rise T ime 3–75 400 ns VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
tfOutput Fall T ime 3–50 400 ns VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
RthJSB
case
SOT-89B
Thermal Resistance Junction
to Substrate Backside – – 150 200 K/W Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–3
RthJA
case
TO-92UA
Thermal Resistance Junction
to Soldering Point – – 150 200 K/W
1) B > BON + 2 mT or B < BOFF – 2 mT for HAL50x, B > BOFF + 2 mT or B < BON – 2 mT for HAL51x
Fig. 3–3: Recommended pad size SOT-89B
Dimensions in mm
5.0
2.0
2.0
1.0
HAL5xx
9Micronas
3.7. Magnetic Characteristics Overview at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit
Switching type TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL 501 –40 °C–0.8 0.6 2.5 –2.5 –0.8 0.8 0.5 1.4 2 mT
bipolar 25 °C–0.5 0.5 2.3 –2.3 –0.7 0.5 0.5 1.2 1.9 mT
170 °C–1.5 0.7 3 –2.5 –0.2 2 0.4 0.9 1.8 mT
HAL 502 –40 °C 1 2.8 5 –5–2.8 –1 4.5 5.6 7.2 mT
latching 25 °C 1 2.6 4.5 –4.5 –2.6 –1 4.5 5.2 7 mT
170 °C 0.9 2.3 4.3 –4.3 –2.3 –0.9 3.5 4.6 6.8 mT
HAL 503 –40 °C 6.4 8.6 10.8 –10.8 –8.6 –6.4 14.6 17.2 20.6 mT
latching 25 °C 6 8 10 –10 –8–6 13.6 16 18 mT
170 °C 4 6.4 8.9 –8.9 –6–411 12.4 16 mT
HAL 504 –40 °C 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 mT
unipolar 25 °C 9.5 12 14.5 5 7 9 4 5 6.5 mT
170 °C 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 mT
HAL 505 –40 °C 11.8 15 18.3 –18.3 –15 –11.8 26 30 34 mT
latching 25 °C11 13.5 17 –17 –13.5 –11 24 27 32 mT
170 °C 9.4 11.7 16.1 –16.1 –11.7 –9.4 20 23.4 31.3 mT
HAL 506 –40 °C 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 mT
unipolar 25 °C 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 mT
170 °C 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 mT
HAL 508 –40 °C 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 mT
unipolar 25 °C 15 18 20.7 13.5 16 19 1.5 2 2.7 mT
170 °C 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 mT
HAL 509 –40 °C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 mT
unipolar 25 °C 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 mT
170 °C 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 mT
HAL 516 –40 °C 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 mT
unipolar 25 °C 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 mT
inverted 170 °C 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 mT
HAL 517 –40 °C 14 17.1 21.5 15.5 19.6 22.5 1.6 2.5 3 mT
unipolar 25 °C 13.5 16.2 19 15 18.3 20.7 1.5 2.1 2.7 mT
inverted 170 °C 9 12.3 18 10.5 13.7 20 0.8 1.4 2.4 mT
HAL 518 –40 °C 14 16.7 20 15.5 19 22 1.5 2.3 3 mT
unipolar 25 °C 13.5 16 19 15 18 20.7 1.4 2 2.8 mT
inverted 170 °C11 13.6 18.3 12.2 15.3 20 0.8 1.7 2.6 mT
Note: For detailed descriptions of the individual types, see pages 14 and following.
HAL5xx
10 Micronas
Magnetic Characteristics Overview, continued
Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit
Switching type TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL 519 –40 °C–5.4 –3.8 –2.1 –7.7 –5.9 –4.3 1.6 2.1 2.8 mT
unipolar 25 °C–5–3.6 –2–7.2 –5.5 –3.8 1.5 1.9 2.7 mT
inverted 170 °C–5.2 –3.0 –1.5 –6.8 –4.6 –2.8 0.9 1.6 2.6 mT
HAL 523 –40 °C 28 34.5 42 18 24 30 7 10.5 14 mT
unipolar 25 °C 28 34.5 42 18 24 30 7 10.5 14 mT
170 °C 28 34.5 42 18 24 30 7 10.5 14 mT
Note: For detailed descriptions of the individual types, see pages 14 and following.
–15
–10
–5
0
5
10
15
20
–15–10 –5 0 5 101520253035
V
mA
VDD
IDD TA = –40 °C
TA = 25 °C
TA=170 °C
25 HAL5xx
Fig. 3–4: Typical supply current
versus supply voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12345678
V
mA
VDD
IDD TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
HAL5xx
Fig. 3–5: Typical supply current
versus supply voltage
HAL5xx
11Micronas
0
1
2
3
4
5
–50 0 50 100 150 200°C
mA
TA
IDD
VDD = 3.8 V
VDD = 12 V
VDD = 24 V
HAL5xx
Fig. 3–6: Typical supply current
versus ambient temperature
0
10
20
30
40
50
60
70
80
90
100
–50 0 50 100 150 200°C
kHz
TA
fosc
VDD = 3.8 V
VDD = 4.5 V...24 V
HAL5xx
Fig. 3–7: Typ. internal chopper frequency
versus ambient temperature
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30 V
kHz
VDD
fosc
TA = –40 °C
TA = 25 °C
TA = 170 °C
HAL5xx
Fig. 3–8: T yp. Internal chopper frequency
versus supply voltage
0
10
20
30
40
50
60
70
80
90
100
3 3.5 4.0 4.5 5.0 5.5 6.0 V
kHz
VDD
fosc
TA=–40 °C
TA=25 °C
TA=170 °C
HAL5xx
Fig. 3–9: Typ. internal chopper frequency
versus supply voltage
HAL5xx
12 Micronas
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25 30 V
mV
VDD
VOL
TA = –40 °C
TA = 25 °C
TA = 170 °C
IO = 20 mA
TA = 100 °C
HAL5xx
Fig. 3–10: Typical output low voltage
versus supply voltage
0
100
200
300
400
500
600
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mV
VDD
VOL
TA=–40 °C
TA=25 °C
TA=170 °C
IO = 20 mA
TA=100 °C
HAL5xx
Fig. 3–11: Typical output low voltage
versus supply voltage
0
100
200
300
400
–50 0 50 100 150 200°C
mV
TA
VOL
VDD = 24 V
VDD = 3.8 V
VDD = 4.5 V
HAL5xx
Fig. 3–12: Typical output low voltage
versus ambient temperature
IO = 20 mA
15 20 25 30 35 V
mA
VOH
IOH
TA=–40 °C
TA=170 °C
TA=150 °C
TA=100 °C
TA=25 °C
10–6
10–5
10–4
10–3
10–2
10–1
100
101
102
103
104HAL5xx
Fig. 3–13: Typical output high current
versus output voltage
HAL5xx
13Micronas
–50 0 50 100 150 200°C
µA
TA
IOH VOH = 24 V
VOH = 3.8 V
10–5
10–4
10–3
10–2
10–1
100
101
102HAL5xx
Fig. 3–14: Typical output leakage current
versus ambient temperature
–30
–20
–10
0
10
20
30
0.01 0.10 1.00 10.00 100.001000.00
dBµA
f
IDD
VDD = 12 V
TA = 25 °C
Quasi-Peak-
Measurement
HAL5xx
max.spurious
signals
1 10 100 1000 MHz
Fig. 3–15: Typ. spectrum of supply current
0
10
20
30
40
50
60
70
80
0.01 0.10 1.00 10.00 100.001000.00
dBµV
f
VDD
VP = 12 V
TA = 25 °C
Quasi-Peak-
Measurement
test circuit 2
HAL5xx
max.spurious
signals
1 10 100 1000 MHz
Fig. 3–16: T yp. spectrum at supply voltage
HAL501
14 Micronas
4. Type Description
4.1. HAL501
The HAL501 is the most sensitive sensor of this family
with bipolar switching behavior (see Fig. 4–1).
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is
removed again. Some sensors will change the output
state and some sensors will not.
For correct functioning in the application, the sensor re-
quires both magnetic polarities (north and south) on the
branded side of the package.
Magnetic Features:
–switching type: bipolar
–very high sensitivity
–typical BON: 0.5 mT at room temperature
–typical BOFF: –0.7 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
Applications
The HAL 501 is the optimal sensor for all applications
with alternating magnetic signals and weak magnetic
amplitude at the sensor position such as:
–applications with large airgap or weak magnets,
–rotating speed measurement,
–CAM shaft sensors, and
–magnetic encoders.
Fig. 4–1: Definition of magnetic switching points for
the HAL501
BHYS
Output Voltage
0BOFF BON
VOL
VO
B
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset BOFFSET Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C–0.8 0.6 2.5 –2.5 –0.8 0.8 0.5 1.4 2 –0.1 mT
25 °C–0.5 0.5 2.3 –2.3 –0.7 0.5 0.5 1.2 1.9 –1.4 –0.1 1.4 mT
100 °C–0.9 0.5 2.5 –2.5 –0.6 0.9 0.5 1.1 1.8 0 mT
140 °C–1.2 0.6 2.8 –2.5 –0.5 1.3 0.5 1.1 1.8 0 mT
170 °C–1.5 0.7 3 –2.5 –0.2 2 0.4 0.9 1.8 0.2 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL501
15Micronas
–3
–2
–1
0
1
2
3
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
HAL501
BON
BOFF
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
–3
–2
–1
0
1
2
3
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
HAL501
BON
BOFF
Fig. 4–3: Typ. magnetic switching points
versus supply voltage
–3
–2
–1
0
1
2
3
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
VDD = 3.8 V
VDD = 4.5 V...24 V
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL501
Fig. 4–4: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL502
16 Micronas
4.2. HAL502
The HAL502 is the most sensitive latching sensor of this
family (see Fig. 4–5).
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
does not change if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
For correct functioning in the application, the sensor re-
quires both magnetic polarities (north and south) on the
branded side of the package.
Magnetic Features:
–switching type: latching
–high sensitivity
–typical BON: 2.6 mT at room temperature
–typical BOFF: –2.6 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
–typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Applications
The HAL 502 is the optimal sensor for all applications
with alternating magnetic signals and weak magnetic
amplitude at the sensor position such as:
–applications with large airgap or weak magnets,
–rotating speed measurement,
–commutation of brushless DC motors,
–CAM shaft sensors, and
–magnetic encoders.
Fig. 4–5: Definition of magnetic switching points for
the HAL502
BHYS
Output Voltage
0BOFF BON
VOL
VO
B
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 1 2.8 5 –5–2.8 –1 4.5 5.6 7.2 0 mT
25 °C 1 2.6 4.5 –4.5 –2.6 –1 4.5 5.2 7 –1.5 0 1.5 mT
100 °C 0.95 2.5 4.4 –4.4 –2.5 –0.95 4 5 6.8 0 mT
140 °C 0.9 2.4 4.3 –4.3 –2.4 –0.9 3.7 4.8 6.8 0 mT
170 °C 0.9 2.3 4.3 –4.3 –2.3 –0.9 3.5 4.6 6.8 0 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL502
17Micronas
–6
–4
–2
0
2
4
6
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL502
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
Fig. 4–6: Typ. magnetic switching points
versus supply voltage
–6
–4
–2
0
2
4
6
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
TA=–40 °C
TA=25 °C
TA=170 °C
TA=100 °C
HAL502
BON
BOFF
Fig. 4–7: Typ. magnetic switching points
versus supply voltage
–6
–4
–2
0
2
4
6
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
VDD = 3.8 V
VDD = 4.5 V...24 V
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL502
Fig. 4–8: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL503
18 Micronas
4.3. HAL503
The HAL503 is a latching sensor (see Fig. 4–9).
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
does not change if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
For correct functioning in the application, the sensor re-
quires both magnetic polarities (north and south) on the
branded side of the package.
Magnetic Features:
–switching type: latching
–medium sensitivity
–typical BON: 7.6 mT at room temperature
–typical BOFF: –7.6 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
–typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Applications
The HAL503 is the optimal sensor for applications with
alternating magnetic signals such as:
–multipole magnet applications,
–rotating speed measurement,
–commutation of brushless DC motors, and
–window lifter.
Fig. 4–9: Definition of magnetic switching points for
the HAL503
BHYS
Output Voltage
0BOFF BON
VOL
VO
B
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 6.4 8.4 10.8 –10.8 –8.6 –6.4 14.6 17 20.6 –0.1 mT
25 °C 6 7.6 10 –10 –7.6 –6 13.6 15.2 18 –1.5 0 1.5 mT
100 °C 4.8 7.1 9.5 –9.5 –6.9 –4.8 12.3 14 17 0.1 mT
140 °C 4.4 6.7 9.2 –9.2 –6.4 –4.4 11.5 13.1 16.5 0.1 mT
170 °C 4 6.4 8.9 –8.9 –6–411 12.4 16 0.2 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL503
19Micronas
–12
–8
–4
0
4
8
12
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL503
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
Fig. 4–10: Typ. magnetic switching points
versus supply voltage
–12
–8
–4
0
4
8
12
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL503
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
Fig. 4–11: T yp. magnetic switching points
versus supply voltage
–12
–8
–4
0
4
8
12
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
VDD = 3.8 V
VDD = 4.5 V...24 V
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL503
Fig. 4–12: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
ambient temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL504
20 Micronas
4.4. HAL504
The HAL504 is a unipolar switching sensor (see
Fig. 4–13).
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the mag-
netic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
Magnetic Features:
–switching type: unipolar
–medium sensitivity
–typical BON: 12 mT at room temperature
–typical BOFF: 7 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
–typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Applications
The HAL504 is the optimal sensor for applications with
one magnetic polarity such as:
–solid state switches,
–contactless solution to replace micro switches,
–position and end-point detection, and
–rotating speed measurement.
BHYS
Output Voltage
Fig. 4–13: Definition of magnetic switching points for
the HAL504
0B
OFF BON
VOL
VO
B
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 10.2 mT
25 °C 9.5 12 14.5 5 7 9 4 5 6.5 7.2 9.5 11.8 mT
100 °C 9 11.1 14.1 4.6 6.4 8.7 3.6 4.7 6.4 8.8 mT
140 °C 8.7 10.6 13.9 4.4 6.1 8.6 3.4 4.5 6.4 8.4 mT
170 °C 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 8 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL504
21Micronas
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
TA=–40 °C
TA=25 °C
TA=170 °C
TA=100 °C
HAL504
BON
BOFF
Fig. 4–14: Typ. magnetic switching points
versus supply voltage
0
2
4
6
8
10
12
14
16
18
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
TA=–40 °C
TA=25 °C
TA= 170 °C
TA= 100 °C
HAL504
BON
BOFF
Fig. 4–15: Typ. magnetic switching points
versus supply voltage
0
2
4
6
8
10
12
14
16
18
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
VDD = 3.8 V
VDD = 4.5 V...24 V
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL504
Fig. 4–16: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL505
22 Micronas
4.5. HAL505
The HAL505 is a latching sensor (see Fig. 4–17).
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
does not change if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
For correct functioning in the application, the sensor re-
quires both magnetic polarities (north and south) on the
branded side of the package.
Magnetic Features:
–switching type: latching
–low sensitivity
–typical BON: 13.5 mT at room temperature
–typical BOFF: –13.5 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
–typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Applications
The HAL505 is the optimal sensor for applications with
alternating magnetic signals such as:
–multipole magnet applications,
–rotating speed measurement,
–commutation of brushless DC motors, and
–window lifter.
Fig. 4–17: Definition of magnetic switching points for
the HAL505
BHYS
Output Voltage
0BOFF BON
VOL
VO
B
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 11.8 15 18.3 –18.3 –15 –11.8 26 30 34 0 mT
25 °C11 13.5 17 –17 –13.5 –11 24 27 32 –1.5 0 1.5 mT
100 °C 10.2 12.4 16.6 –16.6 –12.4 –10.2 22 24.8 31.3 0 mT
140 °C 9.7 12 16.3 –16.3 –12 –9.7 21 24.2 31.3 0 mT
170 °C 9.4 11.7 16.1 –16.1 –11.7 –9.4 20 23.4 31.3 0 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL505
23Micronas
–20
–15
–10
–5
0
5
10
15
20
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL505
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
Fig. 4–18: Typ. magnetic switching points
versus supply voltage
–20
–15
–10
–5
0
5
10
15
20
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL505
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
Fig. 4–19: Typ. magnetic switching points
versus supply voltage
–20
–15
–10
–5
0
5
10
15
20
–50 0 50 100 150 200
HAL505
°C
mT
TA, TJ
BON
BOFF
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
VDD = 3.8 V
VDD = 4.5 V...24 V
Fig. 4–20: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
ambient temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL506
24 Micronas
4.6. HAL506
The HAL 506 is the most sensitive unipolar switching
sensor of this family (see Fig. 4–21).
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the mag-
netic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
In the HAL5xx family, the HAL516 is a sensor with the
same magnetic characteristics but with an inverted out-
put characteristic.
Magnetic Features:
–switching type: unipolar
–high sensitivity
–typical BON: 5.5 mT at room temperature
–typical BOFF: 3.5 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
–typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Applications
The HAL 506 is the optimal sensor for all applications
with one magnetic polarity and weak magnetic ampli-
tude at the sensor position such as:
–applications with large airgap or weak magnets,
–solid state switches,
–contactless solution to replace micro switches,
–position and end point detection, and
–rotating speed measurement.
BHYS
Output Voltage
0B
OFF BON
VOL
VO
B
Fig. 4–21: Definition of magnetic switching points for
the HAL506
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 4.8 mT
25 °C 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 3.8 4.5 6.2 mT
100 °C 3.6 5.1 7 1.9 3.3 4.9 1.2 1.8 2.6 4.2 mT
140 °C 3.4 4.8 6.9 1.8 3.1 5.1 1 1.7 2.6 4 mT
170 °C 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 3.8 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL506
25Micronas
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
TA=–40 °C
TA=25 °C
TA=170 °C
TA=100 °C
HAL506
BON
BOFF
Fig. 4–22: Typ. magnetic switching points
versus supply voltage
0
1
2
3
4
5
6
7
8
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL506
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
Fig. 4–23: Typ. magnetic switching points
versus supply voltage
0
1
2
3
4
5
6
7
8
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
VDD = 3.8 V
VDD = 4.5 V...24 V
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL506
Fig. 4–24: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL508
26 Micronas
4.7. HAL508
The HAL508 is a unipolar switching sensor (see
Fig. 4–25).
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the mag-
netic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
In the HAL5xx family, the HAL518 is a sensor with the
same magnetic characteristics but with an inverted out-
put characteristic.
Magnetic Features:
–switching type: unipolar
–medium sensitivity
–typical BON: 18 mT at room temperature
–typical BOFF: 16 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
–typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Applications
The HAL508 is the optimal sensor for applications with
one magnetic polarity such as:
–solid state switches,
–contactless solution to replace micro switches,
–position and end point detection, and
–rotating speed measurement.
BHYS
Output Voltage
0B
OFF BON
VOL
VO
B
Fig. 4–25: Definition of magnetic switching points for
the HAL508
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 17.8 mT
25 °C 15 18 20.7 13.5 16 19 1.5 2 2.7 14 17 20 mT
100 °C 13.9 16.6 20.4 12.5 14.8 18.7 1.2 1.8 2.6 15.7 mT
140 °C 13.2 15.8 20.2 11.9 14.1 18.5 1.1 1.7 2.6 15 mT
170 °C 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 14.4 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL508
27Micronas
0
5
10
15
20
25
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
TA=–40 °C
TA=25 °C
TA=170 °C
TA=100 °C
HAL508
BON
BOFF
Fig. 4–26: Typ. magnetic switching points
versus supply voltage
0
5
10
15
20
25
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL508
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
Fig. 4–27: Typ. magnetic switching points
versus supply voltage
0
5
10
15
20
25
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
VDD = 3.8 V
VDD = 4.5 V...24 V
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL508
Fig. 4–28: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL509
28 Micronas
4.8. HAL509
The HAL509 is a unipolar switching sensor (see
Fig. 4–29).
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the mag-
netic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
Magnetic Features:
–switching type: unipolar
–low sensitivity
–typical BON: 26.8 mT at room temperature
–typical BOFF: 23.2 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
–typical temperature coefficient of magnetic switching
points is –300 ppm/K
Applications
The HAL509 is the optimal sensor for applications with
one magnetic polarity and strong magnetic fields at the
sensor position such as:
–solid state switches,
–contactless solution to replace micro switches,
–position and end point detection, and
–rotating speed measurement.
BHYS
Output Voltage
0B
OFF BON
VOL
VO
B
Fig. 4–29: Definition of magnetic switching points for
the HAL509
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 25.6 mT
25 °C 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 21.5 25 28.5 mT
100 °C 22.2 26.1 29.7 19.1 22.7 25.9 2.7 3.4 3.8 24.4 mT
140 °C 21.7 25.7 29.2 18.6 22.4 25.6 2.6 3.3 3.8 24 mT
170 °C 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 23.7 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL509
29Micronas
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
TA=–40 °C
TA=25 °C
TA=170 °C
TA=100 °C
HAL509
BON
BOFF
Fig. 4–30: Typ. magnetic switching points
versus supply voltage
0
5
10
15
20
25
30
35
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
TA=–40 °C
TA=25 °C
TA=170 °C
TA=100 °C
HAL509
BON
BOFF
Fig. 4–31: Typ. magnetic switching points
versus supply voltage
0
5
10
15
20
25
30
35
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
VDD = 3.8 V
VDD = 4.5 V...24 V
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL509
Fig. 4–32: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL516
30 Micronas
4.9. HAL516
The HAL 516 is the most sensitive unipolar switching
sensor with an inverted output of this family (see
Fig. 4–33).
The output turns high with the magnetic south pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not respond
to the magnetic north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
In the HAL5xx family, the HAL506 is a sensor with the
same magnetic characteristics but with a normal output
characteristic.
Magnetic Features:
–switching type: unipolar inverted
–high sensitivity
–typical BON: 3.5 mT at room temperature
–typical BOFF: 5.5 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
–typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Applications
The HAL 516 is the optimal sensor for all applications
with one magnetic polarity and weak magnetic ampli-
tude at the sensor position where an inverted output sig-
nal is required such as:
–applications with large airgap or weak magnets,
–solid state switches,
–contactless solution to replace micro switches,
–position and end point detection, and
–rotating speed measurement.
BHYS
Output Voltage
0B
ON BOFF
VO
VOL
B
Fig. 4–33: Definition of magnetic switching points for
the HAL516
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 4.8 mT
25 °C 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 3.8 4.5 6.2 mT
100 °C 1.9 3.3 4.9 3.6 5.1 7 1.2 1.8 2.6 4.2 mT
140 °C 1.8 3.1 5.1 3.4 4.8 6.9 1 1.7 2.6 4 mT
170 °C 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 3.8 mT
The hysteresis is the difference between the switching points BHYS = BOFF – BON
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL516
31Micronas
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
TA=–40 °C
TA=25 °C
TA=170 °C
TA=100 °C
HAL516
BON
BOFF
Fig. 4–34: Typ. magnetic switching points
versus supply voltage
0
1
2
3
4
5
6
7
8
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL516
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
Fig. 4–35: Typ. magnetic switching points
versus supply voltage
0
1
2
3
4
5
6
7
8
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
VDD = 3.8 V
VDD = 4.5 V...24 V
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL516
Fig. 4–36: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL517
32 Micronas
4.10. HAL517
The HAL517 is a unipolar switching sensor with inverted
output (see Fig. 4–37).
The output turns high with the magnetic south pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not respond
to the magnetic north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
Magnetic Features:
–switching type: unipolar inverted
–medium sensitivity
–typical on point is 16.2 mT at room temperature
–typical off point is 18.3 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
–typical temperature coefficient of magnetic switching
points is –1700 ppm/K
Applications
The HAL517 is the optimal sensor for applications with
one magnetic polarity where an inverted output signal is
required such as:
–solid state switches,
–contactless solution to replace micro switches,
–position and end point detection, and
–rotating speed measurement.
BHYS
Output Voltage
0B
ON BOFF
VO
VOL
B
Fig. 4–37: Definition of magnetic switching points for
the HAL517
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 14 17.1 21.5 15.5 19.6 22.5 1.6 2.5 3 18.3 mT
25 °C 13.5 16.2 19 15 18.3 20.7 1.5 2.1 2.7 14 17.2 20 mT
100 °C11 14.3 18.5 12.8 16.1 20.4 1.2 1.8 2.6 15.2 mT
140 °C 10 13.2 18.2 11.5 14.8 20.2 1 1.6 2.6 14 mT
170 °C 9 12.3 18 10.5 13.7 20 0.8 1.4 2.4 13 mT
The hysteresis is the difference between the switching points BHYS = BOFF – BON
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL517
33Micronas
0
5
10
15
20
25
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
TA=–40 °C
TA=25 °C
TA=170 °C
TA=100 °C
HAL517
BON
BOFF
Fig. 4–38: Typ. magnetic switching points
versus supply voltage
0
5
10
15
20
25
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
TA=–40 °C
TA=25 °C
TA=170 °C
TA=100 °C
HAL517
BON
BOFF
Fig. 4–39: Typ. magnetic switching points
versus supply voltage
0
5
10
15
20
25
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
VDD = 3.8 V
VDD = 4.5 V...24 V
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL517
Fig. 4–40: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
ambient temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL518
34 Micronas
4.11. HAL518
The HAL518 is a unipolar switching sensor with inverted
output (see Fig. 4–41).
The output turns high with the magnetic south pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not respond
to the magnetic north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
In the HAL5xx family, the HAL508 is a sensor with the
same magnetic characteristics but with a normal output
characteristic.
Magnetic Features:
–switching type: unipolar inverted
–medium sensitivity
–typical BON: 16 mT at room temperature
–typical BOFF: 18 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
–typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Applications
The HAL518 is the optimal sensor for applications with
one magnetic polarity where an inverted output signal is
required such as:
–solid state switches,
–contactless solution to replace micro switches,
–position and end point detection, and
–rotating speed measurement.
BHYS
Output Voltage
0B
ON BOFF
VO
VOL
B
Fig. 4–41: Definition of magnetic switching points for
the HAL518
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 14 16.7 20 15.5 19 22 1.5 2.3 3 17.8 mT
25 °C 13.5 16 19 15 18 20.7 1.4 2 2.8 14 17 20 mT
100 °C 12.5 14.8 18.7 13.9 16.6 20.4 1 1.8 2.7 15.7 mT
140 °C 11.7 14.1 18.5 13 15.8 20.2 0.9 1.7 2.7 15 mT
170 °C11 13.6 18.3 12.2 15.3 20 0.8 1.7 2.6 14.4 mT
The hysteresis is the difference between the switching points BHYS = BOFF – BON
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL518
35Micronas
0
5
10
15
20
25
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
TA=–40 °C
TA=25 °C
TA=170 °C
TA=100 °C
HAL518
BON
BOFF
Fig. 4–42: Typ. magnetic switching points
versus supply voltage
0
5
10
15
20
25
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL518
BON
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
BOFF
Fig. 4–43: Typ. magnetic switching points
versus supply voltage
0
5
10
15
20
25
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
VDD = 3.8 V
VDD = 4.5 V...24 V
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL518
Fig. 4–44: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL519
36 Micronas
4.12. HAL519
The HAL519 is a very sensitive unipolar switching sen-
sor with an inverted output sensitive only to the magnetic
north polarity. (see Fig. 4–45).
The output turns high with the magnetic north pole on the
branded side of the package and turns low if the magnet-
ic field is removed. The sensor does not respond to the
magnetic south pole on the branded side, the output re-
mains low . For correct functioning in the application, the
sensor requires only the magnetic north pole on the
branded side of the package.
Magnetic Features:
–switching type: unipolar inverted, north sensitive
–high sensitivity
–typical BON: –3.5 mT at room temperature
–typical BOFF: –5.5 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
–typical temperature coefficient of magnetic switching
points is –1000 ppm/K
Applications
The HAL 519 is the optimal sensor for all applications
with the north magnetic polarity and weak magnetic am-
plitude at the sensor position where an inverted output
signal is required such as:
–solid state switches,
–contactless solution to replace micro switches,
–position and end point detection, and
–rotating speed measurement.
BHYS
Output Voltage
0BOFF BON
VOL
VO
B
Fig. 4–45: Definition of magnetic switching points for
the HAL519
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C–5.4 –3.8 –2.1 –7.7 –5.9 –4.3 1.6 2.1 2.8 –4.8 mT
25 °C–5–3.6 –2–7.2 –5.5 –3.8 1.5 1.9 2.7 –6.2 –4.5 –3.8 mT
100 °C–4.9 –3.3 –1.9 –6.7 –5–3.4 1.2 1.7 2.6 –4.2 mT
140 °C–5.1 –3.1 –1.7 –6.8 –4.8 –3.1 1 1.7 2.6 –4 mT
170 °C–5.2 –3–1.5 –6.8 –4.6 –2.8 0.9 1.6 2.6 –3.8 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL519
37Micronas
–8
–7
–6
–5
–4
–3
–2
–1
0
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL519
BON
BOFF
Fig. 4–46: Typ. magnetic switching points
versus supply voltage
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
–8
–7
–6
–5
–4
–3
–2
–1
0
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL519
BON
BOFF
Fig. 4–47: Typ. magnetic switching points
versus supply voltage
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
–8
–7
–6
–5
–4
–3
–2
–1
0
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL519
Fig. 4–48: Magnetic switching points
versus temperature
VDD = 3.8 V
VDD = 4.5 V...24 V
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL523
38 Micronas
4.13. HAL523
The HAL523 is the least sensitive unipolar switching
sensor of this family (see Fig. 4–49).
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the mag-
netic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
Magnetic Features:
–switching type: unipolar
–low sensitivity
–typical BON: 34.5 mT at room temperature
–typical BOFF: 24 mT at room temperature
–operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
Applications
The HAL523 is the optimal sensor for applications with
one magnetic polarity and strong magnetic fields at the
sensor position such as:
–solid state switches,
–contactless solution to replace micro switches,
–position and end point detection, and
–rotating speed measurement.
BHYS
Output Voltage
0B
OFF BON
VOL
VO
B
Fig. 4–49: Definition of magnetic switching points for
the HAL523
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT
25 °C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT
100 °C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT
140 °C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT
170 °C 28 34.5 42 18 24 30 7 10.5 14 29.3 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL523
39Micronas
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL523
BON
BOFF
Fig. 4–50: Typ. magnetic switching points
versus supply voltage
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
0
5
10
15
20
25
30
35
40
45
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL523
BON
BOFF
Fig. 4–51: Typ. magnetic switching points
versus supply voltage
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
0
5
10
15
20
25
30
35
40
45
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL523
Fig. 4–52: Magnetic switching points
versus temperature
VDD = 3.8 V
VDD = 4.5 V...24 V
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL5xx
40 Micronas
5. Application Notes
5.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient tem-
perature TA).
TJ = TA + ∆T
At static conditions, the following equation is valid:
∆T = IDD * VDD * Rth
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
TAmax = TJmax – ∆T
5.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic characteris-
tics when operated within the Recommended Operating
Conditions (see page 7).
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V has not
been tested. For special test conditions, please contact
Micronas.
5.3. Start-up Behavior
Due to the active offset compensation, the sensors have
an initialization time (enable time ten(O)) after applying
the supply voltage. The parameter ten(O) is specified in
the Electrical Characteristics (see page 8).
During the initialization time, the output state is not de-
fined and the output can toggle. After ten(O), the output
will be low if the applied magnetic field B is above BON.
The output will be high if B is below BOFF. In case of sen-
sors with an inverted switching behavior (HAL516 ...
HAL519), the output state will be high if B > BOFF and low
if B < BON.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be either
low or high. In order to achieve a well-defined output
state, the applied magnetic field must be above BONmax,
respectively, below BOFFmin.
5.4. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see figures 5–1). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standards DIN 40839.
Note: The international standard ISO 7637 is similar to
the used product standard DIN 40839.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
OUT
GND
3
2
1V
DD
4.7 nF
VEMC
VP
RV
220 Ω
RL1.2 kΩ
20 pF
Fig. 5–1: Test circuit for EMC investigations
HAL5xx
41Micronas
HAL5xx
42 Micronas
HAL5xx
43Micronas
HAL5xx
44 Micronas
6. Data Sheet History
1. Final data sheet: “HAL501...506, 508, 509, 516...
518, Hall Effect Sensor Family, Aug. 11, 1999,
6251-485-1DS. First release of the final data sheet.
Major changes to the previous edition “HAL501 ...
HAL506, HAL 508”, Hall Effect Sensor ICs, May 5,
1997, 6251-405-1DS:
–additional types: HAL509, HAL516 ... HAL518
–additional package SOT-89B
–additional temperature range “K”
–outline dimensions for SOT-89A and TO-92UA
changed
–absolute maximum ratings changed
–electrical characteristics changed
–magnetic characteristics for HAL 501, HAL 503,
HAL 506, and HAL 509 changed
2. Final data sheet: “HAL501...506, 508, 509, 516...
519, 523, Hall Effect Sensor Family”, Feb. 14, 2001,
6251-485-2DS. Second release of the final data
sheet. Major changes:
–additional types: HAL519, HAL523
–phased-out package SOT-89A removed
–temperature range “C” removed
–outline dimensions for SOT-89B: reduced toler-
ances
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com
Printed in Germany
by Systemdruck+Verlags-GmbH, Freiburg (02/01)
Order No. 6251-485-2DS
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability . Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirma-
tion form; the same applies to orders based on development samples
delivered. By this publication, Micronas GmbH does not assume re-
sponsibility for patent infringements or other rights of third parties
which may result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
notify any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on
a retrieval system, or transmitted without the express written consent
of Micronas GmbH.
