Philips Semiconductors Product specification Schottky barrier double diodes PBYR2100CT series FEATURES PINNING MARKING * Low switching losses PIN DESCRIPTION MARKING : TYPE NUMBER High breakdown voltage 1 anode (ay) ENUM CODE Fast recovery time 2 common cathode PBYR280CT BYR28 Guard ring protected 3 anode (a2) PBYR290CT BYR29 * Plastic SMD package. 4 common cathode PBYR2100CT |BYR210 APPLICATIONS e Low power, switched-mode power supplies Rectification e Polarity protection. DESCRIPTION The PBYR2100CT series consists of Schottky barrier double diodes, fabricated in planar technology, and encapsulated in SOT223 plastic SMD packages. 1996 Oct 14 Ub Ls Ul. Top view MAMO8E Fig.1 Simplified outline (SOT223), pin configuration and symbol.Phitips Semiconductors Product specification Schottky barrier double diodes PBYR2100CT series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDTTIONS =| MN. | MAX. | UNIT Per diode VR continuous reverse voltage PBYR280CT - 80 Vv PBYR290CT - 90 Vv PBYR2100CT - 100 Vv Var repetitive peak reverse voltage PBYR280CT - 80 v PBYR290CT - 90 Vv PBYR2100CT - 100 Vv Vawn crest working reverse voltage PBYR280CT - 80 Vv PBYR290CT - 90 Vv PBYR2100CT - 100 Vv lF(avy average forward current Tamb = 85 C; see Fig.2; | - 1 A Rin j-a = 70 K/W; note 1; Vatequiv) = 0-2 V; note 2 lesm non-repetitive peak forward current | t= 8.3 ms half sine wave; | 10 A JEDEC method trsm non-repetitive peak reverse current | t, = 100 us - 0.5 A Tstg storage temperature -65 +150 C Tj junction temperature -65 +150 C Tamb operating ambient temperature ~ 85 C Notes 1. Refer to SOT223 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses Pp are a significant part of the total power losses. Nomograms for determination of the reverse power losses Pr and lIF(ay rating will be available on request. 1996 Oct 14 9-21Philips. Semiconductors Product specification Schottky barrier double diodes PBYR2100CT series ELECTRICAL CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER =| CONDITIONS { MIN, | Typ. | MAX. | UNIT Per diode VF forward voltage see Fig.3 ig = 7 A; note 1 - - 790 mv le= 1 A; Tj= 100 C; note 1 ~ ~ 690 mV Ir reverse current Va = VarnMmexi note 1; see Fig.4 |- - 0.5 mA Vr = Varmmax: 1) = 100 C; ~ - 5 mA note 1; see Fig.4 Ca diode capacitance Va=4V; f= 1 MHz; see Fig.5 - - 100 pF Note 1. Pulsed test: tp = 300 ys; 5 = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rinpa thermal resistance from junction to ambient note 4 70 KW Note 1. Refer to SOT223 standard mounting conditions. 1996 Oct 14 9-22Philips Semiconductors - Product specification Schottky barrier double diodes PBYR2100CT series GRAPHICAL DATA 12 a 10 | FAV) IF (A) \ 08 o4 N Fig.2: Average forward current:derating curve. to-t 1072 1073 0 0.4 0.8 12 ve ts (1) Tams = 25C. (2) Tamp = 85 C. (3) Tam = 100C, (4) Tum = 125 C. (5) Tem = 150C. Fig.3 Forward current as a function of forward voltage; typical values. 101 IR (A) 10? 1075 10 6 QO 20 40 80 100 VR () (1) Tam = 25C. (2) Tam = 85C. (3) Tam = 100C. (4) Tams = 125C, (5) Tam = 150 C. Fig.4 Reverse current as a function of reverse voltage; typical values. 103 Ca (pF) 102 10 0 50 Va) 100 f= 1 MHz. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 1996 Oct 14