CM200TU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMODTM 200 Amperes/600 Volts J S - NUTS (5 TYP) T (4 TYP.) K K R CM P N P GUP EUP L GVP EVP N L GWP EWP N L B E Q M GVN EVN GUN EUN TC MEASURING POINT U TC MEASURING POINT W V J GWN EWN J L L N L N D A V W - THICK x X - WIDE TAB (12 PLACES) W - THICK x X - WIDE TAB (12 PLACES) H C F G P RTC RTC RTC EWP EVP EUP GWN GVN RTC RTC EVN EUN N A W V U GUN Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking GWP GVP GUP RTC EWN Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 4.21 107.0 M 0.57 14.4 4.02 102.0 N 0.85 21.7 P 0.67 17.0 48.5 B C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 D 3.540.01 90.00.25 Q 1.91 E 3.150.01 80.00.25 R 0.15 F 0.16 4.0 S G 1.02 26.0 T 0.22 Dia. M5 Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Millimeters 3.75 Applications: AC Motor Control UPS Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200TU-12F is a 600V (VCES), 200 Ampere SixIGBT IGBTMODTM Power Module. M5 5.5 Dia. H 0.31 8.1 V 0.03 0.8 J 0.91 23.0 W 0.02 0.5 K 0.47 12.0 X 0.110 2.79 L 0.43 11.0 Type Current Rating Amperes VCES Volts (x 50) CM 200 12 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-12F Trench Gate Design Six IGBTMODTM 200 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Symbol CM200TU-12F Units Tj -40 to 150 C Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 200 Amperes ICM 400* Amperes IE 200 Amperes Peak Emitter Current** IEM 400* Amperes Maximum Collector Dissipation (Tj < 150C) Pc 590 Watts Mounting Torque, M5 Main Terminal - 31 in-lb Mounting Torque, M5 Mounting - 31 in-lb - 680 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Min. Typ. Max. Collector-Cutoff Current Symbol ICES VCE = VCES, VGE = 0V Test Conditions - - 1 mA Gate Leakage Voltage IGES VGE = VCES, VCE = 0V - - 20 A Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25C - 1.6 2.2 Volts IC = 200A, VGE = 15V, Tj = 125C - 1.6 - Volts Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V - 1240 - nC Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V - - * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Units 2.6 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-12F Trench Gate Design Six IGBTMODTM 200 Amperes/600 Volts Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VCE = 10V, VGE = 0V Min. Typ. Max. - - 54 - - 3.6 Units nf nf Reverse Transfer Capacitance Cres - - 2 nf Inductive Turn-on Delay Time td(on) VCC = 300V, IC = 200A, - - 120 ns Load Rise Time tr VGE1 = VGE2 = 15V, - - 100 ns Switch Turn-off Delay Time td(off) RG = 3.1, - - 350 ns Times Fall Time tf Inductive Load - - 250 ns Diode Reverse Recovery Time** trr Switching Operation - - 150 ns Diode Reverse Recovery Charge** Qrr IE = 200A - 3.8 - C Typ. Max. Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Rth(j-c)Q Per IGBT 1/6 Module, Tc Reference - Units 0.21 C/W 0.35 C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/6 Module, Tc Reference - - - 0.13 - 0.015 Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/6 Module, C/W Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied - C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-12F Trench Gate Design Six IGBTMODTM 200 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 9.5 15 320 VGE = 20V 9 240 8.5 160 80 5 2.5 10 11 8 7.5 0 VGE = 15V Tj = 25C Tj = 125C 2.0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1.5 1.0 0.5 1 2 3 4 4 3 IC = 400A 2 IC = 200A IC = 80A 1 0 0 0 Tj = 25C 0 80 160 240 320 0 400 4 12 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 101 td(off) Cies 101 Coes 100 tf SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 102 Cres 102 td(on) tr 101 VCC = 300V VGE = 15V RG = 3.1 Tj = 125C Inductive Load VGE = 0V 0 1 2 3 4 100 101 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE trr 101 101 VCC = 300V VGE = 15V RG = 3.1 Tj = 25C Inductive Load 100 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Irr REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 IC = 200A 16 VCC = 200V VCC = 300V 12 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 102 REVERSE RECOVERY TIME, trr, (ns) 10-1 10-1 8 4 102 103 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 100 20 103 102 Tj = 25C 4 16 COLLECTOR-CURRENT, IC, (AMPERES) 103 EMITTER CURRENT, IE, (AMPERES) 8 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 100 10-3 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 0 0 600 1200 GATE CHARGE, QG, (nC) 1800 101 Per Unit Base Rth(j-c) = 0.21C/W (IGBT) Rth(j-c) = 0.35C/W (FWDi) Single Pulse TC = 25C 10-5 TIME, (s) 10-4 10-3 10-3