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Page <1> V1.012/09/14
Silicon Epitaxial Planar Transistor
PNP, -40V, -200mA
Features:
• Power dissipation (PC=200mW)
• Epitaxial planar die construction
• Available in lead free version
Applications:
• General purpose application and switching application
Parameter Symbol Value Unit
Collector-Base Voltage VCBO -40
VCollector-Emitter Voltage VCEO -40
Emitter-Base Voltage VEBO -5
Collector Current -Continuous IC-200 mA
Collector Dissipation PC200 mW
Junction and Storage Temperature Tj, Tstg -55 to 150 °C
Maximum Rating: @ Ta = 25°C unless otherwise specied
Parameter Symbol Test conditions Min Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -40
VCollector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -40
Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5
Collector cut-off current ICBO VCB=-30V, IE=0 -0.05
μA
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.05
DC current gain hFE
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
60
80
100
60
30
300
Collector-emitter saturation voltage VCE(sat)
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-0.25
-0.4 V
Base-emitter saturation voltage VBE(sat)
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA -0.65 -0.85
-0.95
Transition frequency fT
VCE=-20V, IE=-10mA
f=100MHz 250 MHz
Collector output capacitance Cobo VCB=-5V, IE=0, f=1MHz 4.5 pF
Electrical Characteristics: @ Ta = 25°C unless otherwise specied
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Page <2> V1.012/09/14
Silicon Epitaxial Planar Transistor
PNP, -40V, -200mA
Parameter Symbol Test conditions Min Max Unit
Collector output capacitance Ciob VCB=-5V, IE=0, f=1MHz 10 pF
Noise gure NF VCE=-5V, IC=-0.1mA,
f=1KHz, Rs=1KΩ 4 dB
Delay time tdVCC=-3V, VBE=-0.5V,
IC=-10mA,IB1=-1mA
35
nS
Rise time tr35
Storage time tsVCC=-3V, IC=-10mA,
IB1=IB2=-1mA
225
Fall time tf75
Electrical Characteristics: @ Ta = 25°C unless otherwise specied
Typical Characteristics @ Ta = 25°C unless otherwise specied
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Page <3> V1.012/09/14
Silicon Epitaxial Planar Transistor
PNP, -40V, -200mA
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
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Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, Bipolar, PNP, -40V, -200mA MMST3906-7-F
Soldering Footprint:
Dimensions : Millimetres
SOT-323
Dim. Min. Max.
A 1.8 2.2
B 1.15 1.35
C1 Typical
D 0.15 0.35
E 0.25 0.4
G 1.2 1.4
H 0.02 0.1
J0.1 Typical
K 2.1 2.3
Package Outline:
