BC817-25W,135 - NXP Semiconductors / Philips Semiconductors

1. Product profile

1.1 General description

NPN general-purpose transistors.

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

High current

Low voltage

1.3 Applications

General-purpose switching and amplification

1.4 Quick reference data

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Rev. 06 — 17 November 2009 Product data sheet

Table 1. Product overview

Type number Package PNP complement

NXP JEITA

BC817 SOT23 - BC807

BC817W SOT323 SC-70 BC807W

BC337[1] SOT54 (TO-92) SC-43A BC327

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base;

IC=10mA --45V

ICcollector current (DC) - - 500 mA

ICM peak collector current - - 1 A

hFE DC current gain IC = 100 mA;

VCE =1V [1] ---

BC817; BC817W; BC337 100 - 600

BC817-16; BC817-16W; BC337-16 100 - 250

BC817-25; BC817-25W; BC337-25 160 - 400

BC817-40; BC817-40W; BC337-40 250 - 600

Product data sheet Rev. 06 — 17 November 2009 2 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

SOT23

1base

2emitter

3 collector

SOT323

1base

2emitter

3 collector

SOT54

1emitter

2base

3 collector

SOT54A

1emitter

2base

3 collector

SOT54 varia nt

1emitter

2base

3 collector

sym02

sot323_s

sym02

001aab34

sym02

001aab34

sym02

001aab44

sym02

Product data sheet Rev. 06 — 17 November 2009 3 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

3. Ordering information

[1] Valid for all available selection groups.

[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 4. Ordering information

Type number[1] Package

Name Description Version

BC817 - plastic surface mounted package; 3 leads SOT23

BC817W SC-70 plastic surface mounted package; 3 leads SOT323

BC337[2] SC-43A plastic single-ended leaded (through hole) package;

3 leads SOT54

Table 5. Marking codes

Type number Marking code[1]

BC817 6D*

BC817-16 6A*

BC817-25 6B*

BC817-40 6C*

BC817W 6D*

BC817-16W 6A*

BC817-25W 6B*

BC817-40W 6C*

BC337 C337

BC337-16 C33716

BC337-25 C33725

BC337-40 C33740

Product data sheet Rev. 06 — 17 November 2009 4 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

5. Limiting values

[1] Transistor mounted on an FR4 printed-circuit boar d, single-sided copper, tin-plated and standard footprint.

[2] Valid for all available selection groups.

6. Thermal characteristics

[1] Transistor mounted on an FR4 printed-circuit boar d, single-sided copper, tin-plated and standard footprint.

[2] Valid for all available selection groups.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base;

IC=10mA -45V

VEBO emitter-base voltage open collector - 5 V

ICcollector current (DC) - 500 mA

ICM peak collector current - 1 A

IBM peak base current - 200 mA

Ptot total power dissipation

BC817 Tamb ≤ 25 °C[1][2] -250mW

BC817W Tamb ≤ 25 °C[1][2] -200mW

BC337 Tamb ≤ 25 °C[1][2] -625mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient

BC817 Tamb ≤ 25 °C[1][2] - - 500 K/W

BC817W Tamb ≤ 25 °C[1][2] - - 625 K/W

BC337 Tamb ≤ 25 °C[1][2] - - 200 K/W

Product data sheet Rev. 06 — 17 November 2009 5 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

7. Characteristics

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

[2] VBE decreases by approximately 2 mV/K w ith increasing temper ature.

Table 8. Characteristics

Tamb = 25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off current IE = 0 A; VCB = 20 V - - 100 nA

IE = 0 A; VCB = 20 V;

Tj=150°C--5μA

IEBO emitter-base cut-off current IC = 0 A; VEB = 5 V - - 100 nA

hFE DC current gain IC = 100 mA; VCE = 1 V [1]

BC817; BC817W; BC337 100 - 600

BC817-16; BC817-16W;

BC337-16 100 - 250

BC817-25; BC817-25W;

BC337-25 160 - 400

BC817-40; BC817-40W;

BC337-40 250 - 600

hFE DC current gain IC = 500 mA; VCE = 1 V [1] 40 - -

VCEsat collector-emitter saturation

voltage IC = 500 mA; IB = 50 mA [1] --700mV

VBE base-emitter voltage IC = 500 mA; VCE = 1 V [2] --1.2V

Cccollector capacitance IE = ie = 0 A; VCB = 10 V;

f=1MHz -3-pF

fTtransition frequency IC = 10 mA; VCE = 5 V ;

f=100MHz 100 - - MHz

Product data sheet Rev. 06 — 17 November 2009 6 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

VCE = 1 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

VCE = 1 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 1. Selection -1 6: D C cu r re n t ga in as a function of

collector current; typical values Fig 2. Selection -25: DC current gain as a function of

collector current; typical values

VCE = 1 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 3. Selection -40: DC current gain as a function of collecto r current; typical values

006aaa131

200

100

300

400

hFE

IC (mA)

10−1103

102

110

(1)

(2)

(3)

006aaa132

400

200

600

hFE

IC (mA)

10−1103

102

110

(1)

(2)

(3)

006aaa133

400

200

600

800

hFE

IC (mA)

10−1103

102

110

(1)

(2)

(3)

Product data sheet Rev. 06 — 17 November 2009 7 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

IC/IB = 10

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

IC/IB = 10

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig 4. Selection -16: Base-emitter saturation voltage

as a function of collector current; typical

values

Fig 5. Select ion -25: Base-emitter saturation voltage

as a function of collector curre nt; typical

values

IC/IB = 10

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values

006aaa134

IC (mA)

10−1103

102

110

VBEsat

(V)

10−1

(1)

(2)

(3)

006aaa135

IC (mA)

10−1103

102

110

VBEsat

(V)

10−1

(1)

(2)

(3)

006aaa136

IC (mA)

10−1103

102

110

VBEsat

(V)

10−1

(1)

(2)

(3)

Product data sheet Rev. 06 — 17 November 2009 8 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

IC/IB = 10

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

IC/IB = 10

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 7. Selection -16: Collector-emitter satu ratio n

voltage as a function of collector current;

typical valu e s

Fig 8. Selec t ion -25: Collector-emitter saturation

voltage as a function of collector current;

typical values

IC/IB = 10

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 9. Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values

006aaa137

IC (mA)

10−1103

102

110

10−1

VCEsat

(V)

10−2

(1) (2)

(3)

006aaa138

10−1

10−2

VCEsat

(V)

10−3

IC (mA)

10−1103

102

110

(1)

(2)

(3)

006aaa139

10−1

10−2

VCEsat

(V)

10−3

IC (mA)

10−1103

102

110

(1)

(2)

(3)

Product data sheet Rev. 06 — 17 November 2009 9 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Tamb = 25 °C

(1) IB = 16.0 mA

(2) IB = 14.4 mA

(3) IB = 12.8 mA

(4) IB = 11.2 mA

(5) IB = 9.6 mA

(6) IB = 8.0 mA

(7) IB = 6.4 mA

(8) IB = 4.8 mA

(9) IB = 3.2 mA

(10) IB = 1.6 mA

Tamb = 25 °C

(1) IB = 13.0 mA

(2) IB = 11.7 mA

(3) IB = 10.4 mA

(4) IB = 9.1 mA

(5) IB = 7.8 mA

(6) IB = 6.5 mA

(7) IB = 5.2 mA

(8) IB = 3.9 mA

(9) IB = 2.6 mA

(10) IB = 1.3 mA

Fig 10. Selection -16: Collector current as a function

of collector-emitter voltage; typical values Fig 11. Selection -25: Collector current as a function

of collector-emitter voltage; typical values

VCE (V)

054231

006aaa140

0.4

0.8

1.2

(A)

(6)

(7)

(8)

(9)

(10)

(1)(2)

(3)(4)

(5)

VCE (V)

054231

006aaa141

0.4

0.8

1.2

(A)

(7)

(8)

(9)

(10)

(1)(2)

(3)(4)

(5)(6)

Product data sheet Rev. 06 — 17 November 2009 10 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Tamb = 25 °C

(1) IB = 12.0 mA

(2) IB = 10.8 mA

(3) IB = 9.6 mA

(4) IB = 8.4 mA

(5) IB = 7.2 mA

(6) IB = 6.0 mA

(7) IB = 4.8 mA

(8) IB = 3.6 mA

(9) IB = 2.4 mA

(10) IB = 1.2 mA

Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values

VCE (V)

054231

006aaa142

0.4

0.8

1.2

(A)

(7)

(8)

(9)

(10)

(1)(2)

(3)(4)

(5)(6)

Product data sheet Rev. 06 — 17 November 2009 11 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

8. Package outline

Fig 13. Package outline SOT23 (TO-236AB)

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2 0.95

1.9 2.5

2.1

0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

Product data sheet Rev. 06 — 17 November 2009 12 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Fig 14. Package outline SOT323 (SC-70)

UNIT A1

max bpcD Ee1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.1

1.1

0.8

0.4

0.3

0.25

0.10

2.2

1.8

1.35

1.15 0.65

1.3 2.2

2.0

0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

Plastic surface-mounted package; 3 leads SOT32

04-11-04

06-03-16

Product data sheet Rev. 06 — 17 November 2009 13 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Fig 15. Package outline SOT54 (SC-43A/TO-92)

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

L1(1)

max.

2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 04-06-28

04-11-16

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads SOT5

Product data sheet Rev. 06 — 17 November 2009 14 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Fig 16. Package outline SOT54A

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

5.08

e1L2

2.54

L1(1)

max.

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54A 97-05-13

04-06-28

0 2.5 5 mm

scale

Plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54

Product data sheet Rev. 06 — 17 November 2009 15 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Fig 17. Package outline SOT54 variant

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

L1(1)

max L2

max

2.5 2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 variant

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 varia

04-06-28

05-01-10

Product data sheet Rev. 06 — 17 November 2009 16 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

9. Packing information

[1] For further information and the availability of packing methods, see Section 12.

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 5000 10000

BC817 SOT23 4 mm pitch, 8 mm tape and reel -215 - -235

BC817W SOT323 4 mm pitch, 8 mm tape and reel -115 - -135

BC337 SOT54 bulk, straight leads - -412 -

BC337 SOT54A tape and reel, wide pitch - - -116

BC337 SOT54A tape ammopack, wide pitch - - -126

BC337 SOT 54 variant bulk, delta pinning (on-circle) - -112 -

Product data sheet Rev. 06 — 17 November 2009 17 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BC817_BC817W_

BC337_6 20091117 Product data sheet - BC817_BC817W_

BC337_5

Modifications: •This data sheet was changed to reflec t the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical

content.

•Table 3 “Pinning”: updated

•Figure 13 “Package outline SOT23 (TO-236AB)”: updated

•Figure 14 “Package outline SOT323 (SC-70)”: updated

BC817_BC817W_

BC337_5 20050121 Product data sheet CPCN200302007F1 BC817_4;

BC817W_SER_4;

BC337_3

BC817_4 20040105 Product specification - BC817_ 3

BC817W_SER_4 20040225 Product specification - BC817W _SER_3

BC337_3 19990415 Product specification - BC337_338_CNV_2

Product data sheet Rev. 06 — 17 November 2009 18 of 19

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

11.3 Disclaimers

General — In formation in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give an y represent ations or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, milit ary, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applic ations that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Not hing in this document may be interpret ed or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property right s.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of rele ase: 17 Nove mber 2009

Document identifier: BC817_BC817W_BC337_6

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

9 Packing information . . . . . . . . . . . . . . . . . . . . 16

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18

12 Contact information. . . . . . . . . . . . . . . . . . . . . 18

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19