2N7002K
Document number: DS30896 Rev. 10 - 2 1 of 6
www.diodes.com March 2012
© Diodes Incorporated
2N7002K
NEW PRODUCT
N-CHANNEL ENHAN CEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max ID max
TA = 25°C
60V 2 @ VGS = 10V 380mA
3 @ VGS = 5V 310mA
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead, Halogen and Antimony Free, RoHS Compliant "Green"
Device (Notes 1 and 2)
• ESD Protected Up To 2kV
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Motor control
• Power Management Functions
• Backlighting
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Part Number Qualification Case Packaging
2N7002K-7 Commercial SOT23 3000/Tape & Reel
2N7002KQ-7 Automotive SOT23 3000/Tape & Reel
2N7002K-13 Commercial SOT23 10000/Tape & Reel
2N7002KQ-13 Automotive SOT23 10000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
ESD protected up to 2kV Top View
D
GS
Equivalent Circuit
Source
Gate
Protection
Diode
Gate
Drain
K = SAT (Shanghai Assembly/ Test site)
C = CAT (Chengdu Assembly/ Test site)
7K= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Chengdu A/T Site Shanghai A/T Site
C7K
YM
K7K
YM
2N7002K
Document number: DS30896 Rev. 10 - 2 2 of 6
www.diodes.com March 2012
© Diodes Incorporated
2N7002K
NEW PRODUCT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State TA = 25°C
TA = 70°C ID 380
300 mA
t<5s TA = 25°C
TA = 70°C ID 430
340 mA
Continuous Drain Current (Note 5) VGS = 5V
Steady
State TA = 25°C
TA = 70°C ID 310
240 mA
t<5s TA = 25°C
TA = 70°C ID 350
270 mA
Maximum Continuous Body Diode Forward Current (Note 5) IS 0.5 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) (Note 5) IDM 1.2 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) PD 370 mW
Thermal Resistance, Junction to Ambient (Note 4) Steady State RθJA 357 °C/W
t<5s 292
Total Power Dissipation (Note 5) PD 540 mW
Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 240 °C/W
t<5s 197
Thermal Resistance, Junction to Case (Note 5) R
θ
JC 91
Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 μA VDS = 60V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
1.0 1.6 2.5 V
VDS = 10V, ID = 1mA
Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯
⎯ 2.0
3.0 Ω VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
Forward Transfer Admittance |Yfs| 80 ⎯ ⎯ ms VDS =10V, ID = 0.2A
Diode Forward Voltage VSD ⎯ 0.75
1.1
V VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss ⎯ 30 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ⎯ 4.2 25 pF
Reverse Transfer Capacitance Crss ⎯ 2.9 5.0 pF
Gate Resistance R
g
⎯ 133 ⎯ m f = 1MHz , VGS = 0V, VDS = 0V
Total Gate Charge Q
g
⎯ 0.3 ⎯ nC VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge Q
g
s ⎯ 0.2 ⎯ nC
Gate-Drain Charge Q
g
d ⎯ 0.08 ⎯ nC
Turn-On Delay Time tD
(
on
)
⎯ 3.9 ⎯ ns VDD = 30V, VGS = 10V,
RG = 25, ID = 200mA
Turn-On Rise Time t
r
⎯ 3.4 ⎯ ns
Turn-Off Delay Time tD
(
off
)
⎯ 15.7 ⎯ ns
Turn-Off Fall Time tf ⎯ 9.9 ⎯ ns
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
2N7002K
Document number: DS30896 Rev. 10 - 2 3 of 6
www.diodes.com March 2012
© Diodes Incorporated
2N7002K
NEW PRODUCT
0
0.2
0.4
0.6
0.8
1.0
012345
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
I, D
AIN
EN
(A)
D
V , GATE-SOURCE VOL TAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ch
0
0.5
1
1.5
2
-50 -250255075 100 125 150
0.1
I , DRAIN CURRENT (A)
Fig . 4 Stat i c Drai n- Sour ce On-Resi st ance vs. D r ai n Current
D
1
10
1
I , DRAIN CURRENT (A)
Fig. 5 St atic Drain-Source On-Resistance vs. Drain Current
D
10
0
V GATE SOURCE VOLT AGE (V)
GS
,
Fig. 6 St atic Drain-Source On-Resistance vs. Gate-Source Voltage
2N7002K
Document number: DS30896 Rev. 10 - 2 4 of 6
www.diodes.com March 2012
© Diodes Incorporated
2N7002K
NEW PRODUCT
0
T , CHANNEL TEMPERATURE ( C)
Fig. 7
CH
°
Static Drain- Source On-St at e R esis t ance
vs. C hann el Temperat ure
I , REVERSE DRAIN CURRENT (A)
DR
1
I , REVERSE DRAIN CURRENT (A)
DR
1
I , DRAIN CURRENT (A)
D
Fig .10 For ward Trans fe r Admitt anc e vs. Dr ai n Current
|
Y
|, F
O
R
WA
R
D T
R
ANSFE
R
ADMITTAN
C
E (S)
fs
0.001
0.01
0.1
1
0.1 1 10 100
Fi g. 11 Saf e Oper ation Ar ea
V , DRAIN-SOURCE VOLT AGE (V)
DS
I, D
AI
E
(A)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
Single Pulse
J(max)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
0
1
2
3
4
5
6
7
8
9
10
t1, PULSE DURATION TIME (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,0000.0001
Single Pulse
R = 240 C/W
R = r * R
T - T = P * R
θ
θθ
θ
JA
JA(t) (t) JA
JA JA(t)
°
P , PEAK TRANSIENT POIWER (W)
(PK)
2N7002K
Document number: DS30896 Rev. 10 - 2 5 of 6
www.diodes.com March 2012
© Diodes Incorporated
2N7002K
NEW PRODUCT
0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
0.00001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
R = r * R
θ
JA(t) (t)
θ
θ
JA
JA
R = 240 C/W
Duty Cycle, D = t1/t2
°
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
2N7002K
Document number: DS30896 Rev. 10 - 2 6 of 6
www.diodes.com March 2012
© Diodes Incorporated
2N7002K
NEW PRODUCT
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