TSUS4300
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96 1 (5)
GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package
Description
TSUS4300 is an infrared emitting diode in standard GaAs
on GaAs technology, molded in a clear , blue tinted plastic
package. Its lens provides a high radiant intensity without
external optics.
Features
D
High radiant power and radiant intensity
D
Low forward voltage
D
Suitable for DC and high pulse current operation
D
Standard T–1(ø 3 mm) package
D
Angle of half intensity ϕ = ± 16
°
D
Peak wavelength
l
p = 950 nm
D
High reliability
D
Good spectral matching to Si photodetectors
94 8636
Applications
Infrared remote control systems with small package and low cost requirements in combination with silicon photo detec-
tors. Infrared source in reflective sensors, tabe end detection. Excellent matching with phototransistor TEFT4300.
Absolute Maximum Ratings
Tamb = 25
_
C
Parameter Test Conditions Symbol Value Unit
Reverse Voltage VR5 V
Forward Current IF100 mA
Peak Forward Current tp/T=0.5, tp=100
m
s IFM 200 mA
Surge Forward Current tp=100
m
s IFSM 2 A
Power Dissipation PV170 mW
Junction Temperature Tj100
°
C
Operating Temperature Range Tamb –55...+100
°
C
Storage Temperature Range Tstg –55...+100
°
C
Soldering Temperature t
x
5sec, 2 mm from case Tsd 260
°
C
Thermal Resistance Junction/Ambient RthJA 450 K/W
TSUS4300
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
2 (5)
Basic Characteristics
Tamb = 25
_
C
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms VF1.3 1.7 V
g
IF = 1.5 A, tp = 100
m
s VF2.2 V
Temp. Coefficient of VFIF = 100mA TKVF –1.3 mV/K
Reverse Current VR = 5 V IR100
m
A
Breakdown Voltage IR = 100
m
A V(BR) 5 40
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 Cj30 pF
Radiant Intensity IF = 100 mA, tp = 20 ms Ie7 18 mW/sr
y
IF = 1.5 A, tp = 100
m
s Ie160 mW/sr
Radiant Power IF = 100 mA, tp = 20 ms
f
e13 mW
Temp. Coefficient of
f
eIF = 20 mA TK
f
e–0.8 %/K
Angle of Half Intensity ϕ±16 deg
Peak Wavelength IF = 100 mA
l
p950 nm
Spectral Bandwidth IF = 100 mA
Dl
50 nm
Temp. Coefficient of
l
pIF = 100 mA TK
l
p0.2 nm/K
Rise Time IF = 100 mA tr800 ns
IF = 1.5 A tr400 ns
Fall Time IF = 100 mA tf800 ns
IF = 1.5 A tf400 ns
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
020406080
0
50
100
150
200
250
P – Power Dissipation ( mW )
V
Tamb – Ambient Temperature ( °C )
100
94 8029 e
RthJA
Figure 1. Power Dissipation vs. Ambient Temperature
020406080
0
25
50
75
100
125
I – Forward Current ( mA )
F
Tamb – Ambient Temperature ( °C )
100
94 7916 e
RthJA
Figure 2. Forward Current vs. Ambient Temperature
TSUS4300
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96 3 (5)
tp – Pulse Duration ( ms )94 7947 e
100
101
101
10–1
10–1 100102
10–2
I – Forward Current ( A )
F
tp/T=0.01, IFM = 2 A
0.05
0.1
0.5
0.02
0.2
Figure 3. Pulse Forward Current vs. Pulse Duration
012 3
V
F
– Forward Voltage ( V )
4
94 7996 e
101
100
102
103
104
10–1
I – Forward Current ( mA )
F
Figure 4. Forward Current vs. Forward Voltage
020406080
0.7
0.8
0.9
1.0
1.1
1.2
V – Relative Forward Voltage
Frel
Tamb – Ambient Temperature ( °C )
100
94 7990 e
IF = 10 mA
Figure 5. Relative Forward Voltage vs. Ambient Temperature
IF – Forward Current ( mA )94 7979 e
103
101102104
100
0.1
1
10
1000
100
I – Radiant Intensity ( mW/sr )
e
Figure 6. Radiant Intensity vs. Forward Current
– Radiant Power ( mW )
e
IF – Forward Current ( mA )94 7980 e
F
103
101102104
100
0.1
1
10
1000
100
Figure 7. Radiant Power vs. Forward Current
–10 10 500 100
0
0.4
0.8
1.2
1.6
I ;
e rel e rel
Tamb – Ambient Temperature ( °C )
140
94 7993 e
F
IF = 20 mA
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
TSUS4300
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
4 (5)
900 950
0
0.25
0.5
0.75
1.0
1.25
l
– Wavelength ( nm )
1000
94 7994 e
– Relative Radiant Power
e rel
F
IF = 100 mA
Figure 9. Relative Radiant Power vs. Wavelength
0.4 0.2 0 0.2 0.4
I – Relative Radiant Intensity
e rel
0.6
94 7981 e
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
Figure 10. Relative Radiant Intensity vs. Angular Displacement
Dimensions in mm
9612208
TSUS4300
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96 5 (5)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
