MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1414-8L
TECHNICAL DATA
FEATURES
n
LOW INTERMODULATION DISTORTION
n
HIGH GAIN
IM3=-45 dBc at Pout= 28.0dBm G1dB=5.0 dB at 14.0 GHz to 14.5 GHz
Single Carrier Level
n
BROAD BAND INTERNALLY MATCHED FET
n
HIGH POWER
n
HERMETICALLY SEALED PACKAGE
P1dB=39.5 dBm at 14.0 GHz to 14.5 GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point P
1dB
dBm 38.5 39.5
Power Gain at 1dB Gain
Compression Point G
1dB
dB 4.0 5.0
Drain Current I
DS1
A
3.4 4.4
Power Added Efficiency
η
add
VDS= 9V
f= 14.0 to 14.5GHz
%
20
3
rd
Order Intermodulation
Distortion IM3 dBc -42 -45
Drain Current IDS2
Two-Tone Test
Po=28. 0dBm
(Single Carrier Level)
A
3.4 4.4
Channel Temperature Rise
∆
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°
C
80
Recommended gate resistance(Rg) : Rg= 150
Ω
(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance
gm
V
DS
=
3V
I
DS
= 4.0 A
mS
2400
Pinch-off Voltage V
GSoff
V
DS
=
3V
I
DS
= 120mA
V -2.0 -3.5 -5.0
Saturated Drain Current I
DSS
V
DS
=
3V
V
GS
= 0V
A
8.0
Gate-Source Breakdown
Voltage V
GSO
I
GS
= -120
µ
A
V -5
Thermal Resistance R
th(c-c)
Channel to Case
°
C/W
1.6 2.5
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul. 2006
2
TIM1414-8L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage V
DS
V 15
Gate-Source Voltage V
GS
V -5
Drain Current I
DS
A 10.4
Total Power Dissipation (Tc= 25
°
C) P
T
W 60
Channel Temperature T
ch
°
C 175
Storage Temperature T
stg
°
C -65 to +175
PACKAGE OUTLINE (2-11C1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
11.0 MAX.
0.2 MAX.
1.7
±
0.3
0.1
-
0.0
+0.1
2.6
±
0.3
5.0 MAX.
(1)
(2)
(3)
(2)
0.6
±
0.15
17.0
±
0.3
21.5 MAX.
.
12.9
±
0.2
3.2
±
0.3
2.0 MIN.
2.0 MIN.
4-R3.0
3
TIM1414-8L
Output Power (Pout) vs. Frequency
VDS=9V
IDS
≅
3.4A
Pin=34.5 dBm
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=14.5GHz
VDS=9V
IDS
≅
3.4A
Pout
η
add
Pin(dBm)
RF PERFORMANCE
14.0 14.25 14.5
41
40
39
38
37
Pout(dBm)
42
41
40
39
38
37
36
35
34
33
40
30
20
10
0
Pout(dBm)
η
add(%)
27 29 31 33 35 37
4
TIM1414-8L
Power Dissipation(PT) vs. Case Temperature(Tc)
Tc(
°
C )
IM3 vs. Output Power Characteristics
VDS=9V
freq.=14.5GHz
∆
f=5MHz
Pout(dBm) @Single carrier level
0 40 80 120 160 200
PT(W)
60
30
0
23
-10
-20
-30
-40
-50
-60
IM3(dBc)
25 27 29 31 33
