Data Sheet 1 of 10 Rev. 03, 2009-04-01
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA181001GL
Confidential, Limited Internal Distribution
Description
The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE
and WCDMA power amplifier applications in the 1805 to 1880 MHz
band. Features include input and output matching, and thermally-
enhanced open-cavity package with copper flange. Manufactured
with Infineon's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PTFA181001GL
Package PG-63248-2
Thermally-Enhanced High Power RF LDMOS FET
100 W, 1805 – 1880 MHz
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ
= 750 mA, ƒ = 1880 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing
-55
-50
-45
-40
-35
-30
34 36 38 40 42 44 46
Average Output Power (dBm)
IM3 (dBc), ACPR (dBc)
5
10
15
20
25
30
35
Drain Efficiency (%)
ACPR
Efficiency
IM3
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 45 W (AVG), ƒ = 1880 MHz
Characteristic Symbol Min Typ Max Unit
Error Vector Magnitude RMS EVM —1.8 —%
Modulation Spectrum @ 400 KHz ACPR —–61 —dBc
Modulation Spectrum @ 600 KHz ACPR —–73 —dBc
Gain Gps —16.5 —dB
Drain Efficiency ηD—36 —%
PTFA181001HL
Package PG-64248-2
Features
•Thermally-enhanced, plastic open-cavity
(EPOC™) package with copper flange, Pb-free
and RoHS compliant
•Broadband internal matching
•Typical EDGE performance at 1880 MHz, 28 V
- Average output power = 45 W
- Linear Gain = 16.5 dB
- Efficiency = 36%
- EVM RMS = 1.8%
•Typical CW performance, 1880 MHz, 28 V
- Output power at P–1dB = 120 W
- Gain 15.5 dB
- Efficiency = 52%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability
•Capable of handling 10:1 VSWR @ 28 V,
100 W (CW) output power
*See Infineon distributor for future availability.
Data Sheet 2 of 10 Rev. 03, 2009-04-01
PTFA181001GL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 100 W (PEP), ƒ = 1850 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 16 16.5 —dB
Drain Efficiency ηD39 41 —%
Intermodulation Distortion IMD —–30 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.085 —Ω
Operating Gate Voltage VDS = 28 V, ID = 750 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD408 W
Above 25°C derate by 2.33 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 100 W CW) RθJC 0.43 °C/W
Ordering Information
Type and Version Package Type Package Description Shipping Marking
PTFA181001GL V1 PG-63248-2 Thermally-enhanced, plastic Tray PTFA181001GL
open-cavity, slotted flange, single-ended
*See Infineon distributor for future availability.
Data Sheet 3 of 10 Rev. 03, 2009-04-01
PTFA181001GL
Confidential, Limited Internal Distribution
Edge EVM and Modulation Spectrum
vs. Quiescent Current
VDD = 28V, ƒ = 1880 MHz, POUT = 46.5 dBm
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0.65 0.70 0.75 0.80 0.85 0.90
Quiescent Current (A)
EVM RMS (average %) .
-90
-80
-70
-60
-50
-40
-30
-20
-10
Modulation Spectrum (dBc)
EVM
400 KHz
600 KHz
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz
-100
-90
-80
-70
-60
-50
-40
-30
-20
37 39 41 43 45 47 49
Output Power (dBm)
Modulation Spectrum (dB)
5
10
15
20
25
30
35
40
45
Drain Efficiency (%)
Efficiency
400 kHz
600 kHz
Typical Performance (data taken in a production test fixture)
EDGE EVM Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz
0
1
2
3
4
5
6
7
8
37 39 41 43 45 47 49
Output Power (dBm)
EVM RMS (average %) .
5
10
15
20
25
30
35
40
45
Drain Efficiency (%)
EVM
Efficiency
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 750 mA, ƒ1 =1879 MHz, ƒ2 = 1880 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
37 39 41 43 45 47 49
Output Power, Avg. (dBm)
IMD (dBc)
3rd Order
7th
5th
PTFA181001GL
Confidential, Limited Internal Distribution
Data Sheet 4 of 10 Rev. 03, 2009-04-01
Broadband CW Performance
(at P–1dB)
VDD = 28 V, IDQ = 750 mA
14
15
16
17
18
19
1805 1818 1831 1844 1857 1870 1883
Frequency (MHz)
Gain (dB)
35
40
45
50
55
60
Efficiency (%),
Output Power (dBm)
Output Power
Efficiency
Gain
IM3 vs. Output Power at Selected Biases
VDD = 28 V, ƒ1 = 1879, ƒ2 = 1880 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
37 39 41 43 45 47 49
Output Power, Avg. (dBm)
IMD (dBc)
375 mA
1125 mA
750 mA
Typical Performance (cont.)
CW Broadband Performance
VDD = 28 V, IDQ = 750 mA, POUT = 47 dBm
20
25
30
35
40
45
50
55
1805 1818 1831 1844 1857 1870 1883
Frequency (MHz)
Gain (dB), Efficiency (%)
-30
-20
-10
0
10
20
30
40
Return Loss (dB)
Gain
Return Loss
Efficiency
Power Sweep
VDD = 28 V, ƒ = 1880 MHz
14.0
14.5
15.0
15.5
16.0
16.5
17.0
36 38 40 42 44 46 48 50 52
Output Power (dBm)
Power Gain (dB)
IDQ = 1125 mA
IDQ = 375 mA
IDQ = 750 mA
PTFA181001GL
Confidential, Limited Internal Distribution
Data Sheet 5 of 10 Rev. 03, 2009-04-01
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz
12
13
14
15
16
17
18
36 38 40 42 44 46 48 50 52
Output Power (dBm)
Gain (dB)
5
15
25
35
45
55
65
Efficiency
Gain
IS-95 CDMA Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz
0
5
10
15
20
25
30
35
40
33 35 37 39 41 43 45 47
Output Power (dBm), Avg.
Drain Efficiency (%)
-80
-70
-60
-50
-40
-30
-20
-10
Adj. Ch. Power Ratio (dBc)
Efficiency
ACP FC – 0.75 MHz
ACPR FC
+ 1.98 MHz
TCASE = 25°C
TCASE = 90°C
Typical Performance (cont.)
Output Power (at 1 dB Compression)
vs. Supply Voltage
IDQ = 750 mA, ƒ =1880 MHz
49.5
50.0
50.5
51.0
51.5
52.0
24 26 28 30 32
Supply Voltage (V)
Output Power (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.15 A
0.44 A
0.73 A
1.10 A
2.20 A
3.30 A
4.41 A
5.51 A
Data Sheet 6 of 10 Rev. 03, 2009-04-01
PTFA181001GL
Confidential, Limited Internal Distribution
0.1
0.3
0.2
0.1
0
.2
<
-
-
0
.
0
Z Load
Z Source
1805 MHz
1880 MHz
1880 MHz
1805 MHz
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
1805 5.02 –6.23 1.52 –3.98
1830 4.91 –6.10 1.49 –3.97
1850 4.82 –6.13 1.47 –3.79
1860 4.78 –6.20 1.46 –3.75
1880 4.70 –6.36 1.44 –3.67
See next page for reference circuit
Z0 = 50 Ω
Data Sheet 7 of 10 Rev. 03, 2009-04-01
PTFA181001GL
Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit schematic for ƒ = 1880 MHz
Circuit Assembly Information
DUT PTFA181001GL LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 4.5 Rogers TMM4 2 oz. copper
Microstrip Electrical Characteristics at 1880 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.322 λ, 50.0 Ω27.43 x 1.37 1.080 x 0.054
l20.172 λ, 38.0 Ω14.73 x 2.16 0.580 x 0.085
l30.016 λ, 11.4 Ω1.27 x 10.16 0.050 x 0.400
l40.024 λ, 60.0 Ω2.24 x 0.99 0.088 x 0.039
l50.273 λ, 60.0 Ω24.00 x 0.99 0.945 x 0.039
l60.019 λ, 6.9 Ω1.52 x 17.78 0.060 x 0.700
l70.044 λ, 6.9 Ω3.43 x 17.78 0.135 x 0.700
l8, l90.298 λ, 52.0 Ω26.16 x 1.27 1.030 x 0.050
l10 0.039 λ, 4.9 Ω3.10 x 25.65 0.122 x 1.010
l11 (taper) 0.037 λ, 4.9 Ω / 10.3 Ω2.92 x 25.65 / 11.43 0.115 x 1.010 / 0.450
l12 (taper) 0.033 λ, 10.3 Ω / 41.2 Ω2.79 x 11.43 / 1.91 0.110 x 0.450 / 0.075
l13 0.055 λ, 41.2 Ω4.70 x 1.91 0.185 x 0.075
l14 0.058 λ, 41.2 Ω4.95 x 1.91 0.195 x 0.075
l15 0.327 λ, 50.0 Ω28.98 x 1.37 1.141 x 0.054
1Electrical characteristics are rounded.
R3
2K V
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
QQ1
LM7805
C1
0.001µF
VDD
R5
10 V
R4
2K V
R1
1.2K V
C9
10pF
l1
R9
10 V
DUT
J1
l5
C6
1µF
C5
0.1µF
C4
10µF
35V
C7
0.01µF
R8
2K V
C8
10pF
R7
5.1K V
C10
0.6pF
C12
1µF
C11
10pF
C13
10µF
50V
C20
1.5pF
C19
1.5pF
C14
10µF
50V
C16
1µF
C15
10pF
C17
10µF
50V
C18
10µF
50V
L2
C22
10pF
C21
0.8pF
l2l3l6l10 l11 l12 l13 l14 l15
l7
l4
l8
l9
R6
5.1K V
VDD
J2
L1
V66100-G9222-D683-01-7606.dwg
Data Sheet 8 of 10 Rev. 03, 2009-04-01
PTFA181001GL
Confidential, Limited Internal Distribution
Reference circuit assembly diagram* (not to scale)
Reference Circuit (cont.)
RF_OUT
a181001ghl_cd_11-12-08
VDD
R5
C9
R9
R8
C15
C8
RF_IN
L1
C11
C12
C19
C21
C20
C22
C16
C17 C18
C13 C14
C5
R6
R7
C4
C6
C7
L2
R4
Q1
QQ1
C3
C1
C2
R1
R3
R2
VDD
C10
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C5 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C12, C16 Capacitor, 1.0 µF ATC 920C105
C7 Capacitor, 0.01 µF ATC 200B 103
C8, C9, C11, C15, C22 Ceramic capacitor, 10 pF ATC 100B 100
C10 Ceramic capacitor, 0.6 pF ATC 100B 0R6
C13, C14, C17, C18 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C19, C20 Ceramic capacitor, 1.5 pF ATC 100B 1R5
C21 Ceramic capacitor, 0.8 pF ATC 100B 0R8
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip Resistor, 1.2k ohms Digi-Key P1.2KGCT-ND
R2 Chip Resistor, 1.3k ohms Digi-Key P1.3KGCT-ND
R3, R8 Chip Resistor, 2k ohms Digi-Key P2KECT-ND
R4 Potentiometer, 2k ohms Digi-Key 3224W-202ETR-ND
R5, R9 Chip Resistor, 10 ohms Digi-Key P10ECT-ND
R6, R7 Chip Resistor 5.1k ohms Digi-Key P5.1KECT-ND
*Gerber files for this circuit available on request
Data Sheet 9 of 10 Rev. 03, 2009-04-01
PTFA181001GL
Confidential, Limited Internal Distribution
Package Outline Specifications
Package PG-63248-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
5. Gold plating thickness: < 0.254 micron [< 10 microinch]
6. Tabs may protrude 0.13 [.005] max from body.
7. Pins: D = drain, S = source, G = gate.
C
L
0.064 (.0025) –A–
C
L
4.83±0.51
[.190±.020] C
L
PG-68248-2(G)_po_8-28-08
20.27
[.798]
34.04 ± 0.08
[1.340 ± .003]
3X R0.51
+1.14
–0.25
[R.020 ]
+.045
–.010
45° X 2.72
[45° X .107]
45° X 1.78
[45° X .070]
6.
2X R1.63
[R.064]
9.78 ± 0.08
[.385 ± .003]
3.63
+0.25
–0.13
[.143 ]
+.010
–.005
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 10 of 10 Rev. 03, 2009-04-01
PTFA181001GL V1
Confidential, Limited Internal Distribution
Revision History: 2009-04-01 Data Sheet
Previous Version: 2009-02-19, Data Sheet
Page Subjects (major changes since last revision)
9, 10 Update package information.
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-04-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
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