DMN3730UFB4
Document number: DS35017 Rev. 5 - 2 1 of 6
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DMN3730UFB4
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30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) ID
TA = 25°C
30V 460mΩ @ VGS= 4.5V 0.9A
560mΩ @ VGS= 2.5V 0.7A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
• Portable applications
• Power Management Functions
Features and Benefits
• 0.4mm ultra low profile package for thin application
• 0.6mm2 package footprint, 10 times smaller than SOT23
• Low VGS(th), can be driven directly from a battery
• Low RDS(on)
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2kV
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X2-DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Ordering Information (Note 3)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN3730UFB4-7 NF 7 8 3000
DMN3730UFB4-7B NF 7 8 10,000
Notes: 1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
X2-DFN1006-3
Equivalent Circuit
Top View
Bottom View
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
ESD PROTECTED TO 2kV
NF = Product Type Marking Code
NF NF
DMN3730UFB4-7 DMN3730UFB4-7B
Top View
Bar Denotes Gate
and Source Side
Top View
Dot Denotes
Drain Side
DS
G
DMN3730UFB4
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±8
Continuous Drain Current VGS = 4.5V (Note 5) ID 0.91
A
TA = 70°C (Note 5) 0.73
(Note 4) 0.75
Pulsed Drain Current (Note 6) IDM 3
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 0.69 W
(Note 4) 0.47
Thermal Resistance, Junction to Ambient (Note 5) RθJA 180 °C/W
(Note 4) 258
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS 30 - - V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 30V, VGS = 0V
Gate-Source Leakage IGSS - - 3 μA VGS = ±8V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS
(
th
)
0.45 - 0.95 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance (Note 7) RDS(on) - -
460 mΩ VGS = 4.5V, ID = 200mA
560 VGS = 2.5V, ID = 100mA
730 VGS = 1.8V, ID = 75mA
Forward Transfer Admittance |Yfs| 40 - - mS
VDS = 3V, ID = 10mA
Diode Forward Voltage (Note 7) VSD - 0.7 1.2 V
VGS = 0V, IS = 300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss - 64.3 - pF VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 6.1 - pF
Reverse Transfer Capacitance Crss - 4.5 - pF
Gate Resistance R
g
- 70 - Ω VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge Q
g
- 1.6 - nC VGS = 4.5V, VDS = 15V,
ID = 1A
Gate-Source Charge Q
g
s - 0.2 - nC
Gate-Drain Charge Q
g
d - 0.2 - nC
Turn-On Delay Time tD
(
on
)
- 3.5 - ns VDS = 10V, ID = 1A
VGS = 10V, RG = 6Ω
Turn-On Rise Time t
r
- 2.8 - ns
Turn-Off Delay Time tD
(
off
)
- 38 - ns
Turn-Off Fall Time tf - 13 - ns
Notes: 4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
5. Same as note 4, except the device measured at t ≤ 10 sec.
6. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10μs.
7. Measured under pulsed conditions to minimize sel f-hea ting effect. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
DMN3730UFB4
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012345
Fig . 1 Typical Output Char acteristic
V , DRAIN-S OURCE VOLTAGE (V)
DS
0
0.5
1.0
1.5
2.0
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 10V
GS
0
0.5
1.0
1.5
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
2.0
00.511.522.53
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOL TAGE (V)
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0 0.4 0.8 1.2 1.6 2
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
0
0.2
0.4
0.6
0.8
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
Ω
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
0 0.25 0.5 0.75 1 1.25 1.5
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs . Dr ai n Current and Tempera t ur e
0
0.2
0.4
0.6
0.8
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance V ariation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.6
, D
AIN-S
E
ON-RESIST ANCE (NORMALIZED)
DSON
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
Fig. 6 On - Resistance Varia tion with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
0
0.2
0.4
0.6
0.8
, D
AI
-S
E
-
ESIS
A
E ( )
DSON
Ω
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
DMN3730UFB4
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Fig. 7 Gate Threshold V ariation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.
2
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0 0.2 0.4 0.6 0.8 1 1.2
Fig. 8 Di ode Forw ar d Voltage vs. Current
V , SOURCE-DRAIN VOLT AGE (V)
SD
0
0.4
0.8
1.2
1.6
2.0
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLT AGE (V)
DS
1
10
100
,
A
A
I
AN
E (p
)
C
iss
C
rss
C
oss
f = 1MHz
1
10
100
1,000
10,000
0 5 10 15 20 25 30
Fig. 10 Typical Leakage Current
vs. D r ai n- S ource Volta ge
V , DRA IN-SOURCE VO LTAGE (V )
DS
I, LEAKA
E
EN
(nA)
DSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
2
4
6
8
0 0.5 1 1.5 2 2.5 3
Fig. 11 Gat e-C har g e C har ac t er i stics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOL TAGE (V)
GS
V = 15V
I = 1A
DS
D
DMN3730UFB4
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0.001 0.01 0.1 1 10 100 1,000
Fig. 12 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001
0.001
0.01
0.1
1
r(t),
ANSIEN
E
MAL
ESIS
AN
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 253°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
Package Outline Dimensions
Suggested Pad Layout
X2-DFN1006-3
Dim Min Max Typ
A ⎯0.40 ⎯
A1 0 0.05 0.02
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e ⎯ ⎯ 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 ⎯ ⎯ 0.40
All Dimensions in mm
Dimensions Value (in m m)
Z 1.1
G1 0.3
G2 0.2
X 0.7
X1 0.25
Y 0.4
C 0.7
Y
C
G1
G2
X
X
1
Z
L2
A1
Eb2
L1L3
D
e
b1
A
DMN3730UFB4
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