DATA SH EET
Product specification
File under Integrated Circuits, IC01 March 1989
INTEGRATED CIRCUITS
TDA1072AT
AM receiver circuit
March 1989 2
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
GENERAL DESCRIPTION
The TDA 1072AT integrated AM receiver circuit performs the active and part of the filtering functions of an AM radio
receiver. It is intended for use in mains-fed home receivers and car radios. The circuit can be used for oscillator
frequencies up to 50 MHz and can handle RF signals up to 500 mV. RF radiation and sensitivity to interference are
minimized by an almost symmetrical design. The voltage-controlled oscillator provides signals with extremely low
distortion and high spectral purity over the whole frequency range even when tuning with variable capacitance diodes.
If required, band switching diodes can easily be applied. Selectivity is obtained using a block filter before the IF amplifier.
Features
•Inputs protected against damage by static discharge
•Gain-controlled RF stage
•Double balanced mixer
•Separately buffered, voltage-controlled and temperature-compensated oscillator, designed for simple coils
•Gain-controlled IF stage with wide AGC range
•Full-wave, balanced envelope detector
•Internal generation of AGC voltage with possibility of second-order filtering
•Buffered field strength indicator driver with short-circuit protection
•AF preamplifier with possibilities for simple AF filtering
•Electronic standby switch.
QUICK REFERENCE DATA
PACKAGE OUTLINE
16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 August 13.
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Supply voltage range VP7.5 −10 V
Supply current range IP15 −26 mA
RF input voltage for
S+N/N = 6 dB at m = 30% VI−1.5 −µV
RF input voltage for 3%
total harmonic distortion
(THD) at m = 80% VI−500 −mV
AF output voltage with
VI = 2 mV; fI = 1 MHz;
m = 30% and fm = 400 Hz VO(AF) −310 −mV
AGC range: change of VI
for 1 dB change of VO(AF) −86 −dB
Field strength indicator
voltage at VI = 500 mV;
RL(9) = 2.7 kΩVIND −2.8 −V
March 1989 3
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
Fig.1 Block diagram and test circuit (connections shown in broken lines are not part of the test circuit).
(1) Coil data: TOKO sample no. 7XNS-A7523DY; L1: N1/N2 = 12/32; Qo = 65; QB = 57.
Filter data: ZF = 700 Ωat R3-4 = 3 kΩ; Z1 = 4.8 kΩ.
March 1989 4
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
FUNCTIONAL DESCRIPTION
Gain-controlled RF stage and mixer
The differential amplifier in the RF stage employs an AGC negative feedback network to provide a wide dynamic range.
Very good cross-modulation behaviour is achieved by AGC delays at the various signal stages. Large signals are
handled with low distortion and the S/N ratio of small signals is also improved. Low noise working is achieved in the
differential amplifier by using transistors with a low base resistance.
A double balanced mixer provides the IF output to pin 1.
Oscillator
The differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. The oscillator
is voltage-controlled and has little distortion or spurious radiation. It is specially suitable for electronic tuning using
variable capacitance diodes. Band switching diodes can easily be applied using the stabilized voltage V11-16. An extra
buffered oscillator output is available for driving a synthesizer. If this is not needed, resistor RL(10) can be omitted.
Gain-controlled IF amplifier
This amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter. Both
stages are gain-controlled by the AGC negative feedback network.
Detector
The full-wave, balanced envelope detector has very low distortion over a wide dynamic range. The residual IF carrier is
blocked from the signal path by an internal low-pass filter.
AF preamplifier
This stage preamplifies the audio frequency output. The amplifier output stage uses an emitter follower with a series
resistor which, together with an external capacitor, provides the required low-pass filtering for AF signals.
AGC amplifier
The AGC amplifier provides a control voltage which is proportional to the carrier amplitude. Second-order filtering of the
AGC voltage achieves signals with very little distortion, even at low audio frequencies. This method of filtering also gives
a fast AGC settling time which is advantageous for electronic search tuning. The AGC settling time can be further
reduced by using capacitors of smaller value in the external filter. The AGC voltage is fed to the RF and IF stages via
suitable AGC delays. The capacitor at pin 7 can be omitted for low-cost applications.
Field strength indicator output
A buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input
signals over the whole dynamic range. If field strength information is not needed, RL(9) can be omitted.
Standby switch
This switch is primariIy intended for AM/FM band switching. During standby mode the oscillator, mixer and demodulator
are switched off.
Short-circuit protection
All pins have short-circuit protection to ground.
March 1989 5
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
RATINGS
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
Note
1. Mounted on epoxiprint.
THERMAL RESISTANCE
Note
1. Mounted on epoxiprint.
PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT
Supply voltage VP = V13-16 V13 −12 V
Input voltage
pins 14-15 V14-15 −10 V
pins 14-16 V14-16 −VPV
pins 15-16 V15-16 −VPV
pins 14-16 V14-16 −−0.6 V
pins 15-16 V15-16 −−0.6 V
Input current
(pins 14 and 15) I14-15 −200 mA
Total power dissipation (note 1) Ptot −300 mW
Operating ambient temperature range Tamb −40 + 80 °C
Storage temperature range Tstg −55 + 150 °C
Junction temperature Tj−+ 125 °C
From junction to ambient Rth j-a 300 K/W
160 K/W(1)
March 1989 6
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
CHARACTERISTICS
VP = V13-16 = 8.5 V; Tamb = 25 °C; fi = 1 MHz; fm = 400 Hz; m = 30%; fIF = 460 kHz; measured in test circuit of Fig.1; all
measurements are with respect to ground (pin 16); unless otherwise specified
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Supplies
Supply voltage (pin 13) V13 7.5 8.5 10 V
Supply current (pin 13) I13 15 23 27 mA
RF stage and mixer
Input voltage (DC value) V14-15 −VP / 2 −V
RF input impedance at
VI < 300 µVR
14-15 −5.5 −kΩ
C14-15 −25 −pF
RF input impedance at
VI > 10 mV R14-15 −8−kΩ
C14-15 −22 −pF
IF output impedance R1500 0 0 kΩ
C1−6−pF
Conversion transconductance
before start of AGC I1/VI−6.5 −mA/V
Maximum IF output voltage,
inductive coupling to pin 1,
(peak-to-peak value) V1(p-p) −5−V
DC value of output current
(pin 1) at VI = 0 V I1−1.2 −mA
AGC range of input stage −30 −dB
RF signal handling capability:
input voltage for THD = 3%
at m = 80% (RMS value) VI(rms) −500 −mV
Oscillator
Frequency range ∆f 0.6 −60 MHz
Oscillator amplitude
(pins 11 to 12)
(peak-to-peak value) V11-12(p-p) −130 150 mV
External load impedance R11-12(ext) 0.5 −200 kΩ
External load impedance for
no oscillation R11-12(ext) −−60 Ω
Ripple rejection at VP
= 100 mV (RMS value);
fp = 100 Hz
(RR = 20 log [V13/V11])
March 1989 7
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
Source voltage for switching
diodes (6 ×VBE)V
11 −4.2 −V
DC output current (for
switching diodes) VP = V13
≤ 9 V I11 0−5mA
Change of output voltage at
∆I11 = 20 mA (switch to
maximum load) ∆V11 −0.5 −V
Buffered oscillator output
DC output voltage V10 −0.7 −V
Output signal amplitude
(peak-to-peak value) V10(p-p) −320 −mV
Output impedance R10 −170 −Ω
Output current I10(peak) −−−3mA
IF, AGC and AF stages
DC input voltage V3-4 −2−V
IF input impedance R3-4 2.4 3.0 3.9 kΩ
C3-4 −7−pF
IF input voltage for
THD = 3% at m = 80% V3-4 −90 −mV
Voltage gain before start
of AGC V3-4/V6−68 −dB
AGC range of IF stages:
change of V3-4 for 1 dB
change of VO(AF);
V3-4(ref) = 75 mV ∆V3-4 −55 −dB
AF output voltage at
V3-4(IF) = 50 µVV
O(AF) −130 −mV
AF output voltage at
V3-4(IF) = 1 mV VO(AF) −310 −mV
AF output impedance (pin 6) ZO−3.5 −kΩ
Indicator driver
Output voltage at
VI= 0 mV RL(9) = 2.7 kΩV9−20 150 mV
Output voltage at
VI= 500 mV RL(9) = 2.7 kΩV92.5 2.8 3.1 V
Load resistance RL(9) 2.7 −−kΩ
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
March 1989 8
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
OPERATING CHARACTERISTICS
VP = 8.5 V; fI = 1 MHz; m = 30%; fm = 400 Hz; Tamb = 25 °C; measured in Fig.1; unless otherwise specified
Standby switch
Switching threshold at
VP= 7.5 to 18 V;
Tamb =−40 to +80 °C
ON-voltage V20−2V
OFF-voltage V23.5 −20 V
ON-current V2= 0 V I2−−−200 µA
OFF-current V2= 20 V I2−−10 µA
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
RF sensitivity
RF input required for
S+N/N = 6 dB VI−1.5 −µV
S+N/N = 26 dB VI−15 −µV
S+N/N = 46 dB VI−150 −µV
RF input at start of AGC VI−30 −µV
RF large signal handling
RF input at
THD = 3%; m = 80% VI−500 −mV
THD = 3%; m = 30% VI−700 −mV
THD = 10%; m = 30% VI−900 −mV
AGC range
Change of VIfor
1 dB change of VO(AF) VI(ref) = 500 mV ∆VI−86 −dB
6 dB change of VO(AF) VI(ref) = 500 mV ∆VI−91 −dB
Output signal
AF output voltage at
VI= 4 µV m = 80% VO(AF) −130 −mV
VI= 1 mV VO(AF) 240 310 390 mV
Total harmonic distortion at
VI= 1 mV m = 80% dtot −0.5 −%
VI= 500 mV m = 30% dtot −1−%
Signal-to-noise ratio VI= 100 mV S+N/N −58 −dB
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
March 1989 9
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
Ripple rejection at
VI= 2 mV
VP= 100 mV (RMS value)
fp= 100 Hz
(RR = 20 log [VP/VO(AF)]) RR −38 −dB
Unwanted signals
Suppression of IF whistles
at VI= 15 µV; m = 0%
related to AF signal of
m = 30%
at fI≈ 2 ×fIF α2IF −37 −dB
at fI≈ 3 ×fIF α3IF −44 −dB
IF suppression at RF input
for symmetrical input αIF −40 −dB
for asymmetrical input αIF −40 −dB
Residual oscillator signal
at mixer output
at fosc I(osc) −1−µA
at 2 ×fosc I(2osc) −1.1 −µA
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
March 1989 10
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
APPLICATION INFORMATION
Fig.2 Oscillator circuit using quartz crystal; centre frequency = 27 MHz.
(1) Capacitor values depend on crystal type.
(2) Coil data: 9 windings of 0.1 mm dia laminated Cu wire on TOKO coil set 7K 199CN; Qo = 80.
Fig.3 AF output as a function of RF input in the
circuit of Fig.1; fI= 1 MHz; fm = 400 Hz;
m = 30%.
Fig.4 Total harmonic distortion and S+N/N as
functions of RF input in the circuit of Fig.1;
m = 30% for (S+N)/N curve and m = 80% for
THD curve.
March 1989 11
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
Fig.5 Total harmonic distortion as a function of modulation frequency at VI = 5 mV; m = 80%; measured
in the circuit of Fig.1 with C7-16(ext) = 0 µF and 2.2 µF.
Fig.6 Indicator driver voltage as a function of RF
input in the circuit of Fig.1. Fig.7 Typical frequency response curves from
Fig.1 showing the effects of filtering.
with IF filter
- - with AF filter
with IF and AF filter
March 1989 12
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
Fig.8 Car radio application with inductive tuning.
Fig.9 AF output as a function of RF input using the circuit of Fig.8 with that of Fig.1.
March 1989 13
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
Fig.10 Suppression of cross-modulation as a function of input signal, measured in the circuit of Fig.8 with the
input circuit as shown in Fig.11. Curve is for wanted VO(AF)/unwanted VO(AF) = 20 dB; Vrfw, Vrfu are signals
at the aerial input, V'aew, V'aeu are signals at the unloaded output of the aerial.
Wanted signal (V'aew, Vrfw): fi = 1 MHz; fm = 400 Hz; m = 30%.
Unwanted signal (V'aeu, Vrfu): fi = 900 kHz; fm = 400 Hz; m = 30%.
Effective selectivity of input tuned circuit = 21 dB.
Fig.11 Input circuit to show cross-modulation suppression (see Fig.10).
March 1989 14
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
Fig.12 Oscillator amplitude as a function of the impedance at pins 11 and 12 in the circuit of Fig.8.
Fig.13 Total harmonic distortion and (S+N)/N as functions of RF input using the circuit of Fig.8 with that of Fig.1.
March 1989 15
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
Fig.14 Forward transfer impedance as a function of intermediate frequency for filters 1 to 4 shown in Fig.14;
centre frequency = 455 kHz.
March 1989 16
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
Fig.15 IF filter variants applied to the circuit of Fig.1; for filter data refer to Table 1.
March 1989 17
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
Table 1 Data for IF filters shown in Fig.15. Criterium for adjustment is ZF = maximum (optional selectivity curve at centre frequency fo = 455 kHz).
See also Fig.14.
* The beginning of an arrow indicates the beginning of a winding; N1 is always the inner winding. N2 the outer winding.
FILTER NO. 1 2 3 4 UNIT
Coil data L1 L1 L1 L2 L1
Value of C 3900 430 3900 4700 3900 pF
N1: N2 12 : 32 13 : (33 + 66) 15 : 31 29 : 29 13 : 31
Diameter of Cu
laminated wire 0.09 0.08 0.09 0.08 0.09 mm
Qo65 (typ.) 50 75 60 75
Schematic *
of
windings
(N1) (N2)
Toko order no. 7XNS-A7523DY L7PES-A0060BTG 7XNS-A7518DY 7XNS-A7521AIH 7XNS-A7519DY
Resonators
Murata type SFZ455A SFZ455A SFZ455A SFT455B
D (typical value) 4 4 4 6 dB
RG, RL33 3 3 kΩ
Bandwidth (−3 dB) 4.2 4.2 4.2 4.5 kHz
S9kHz 24 24 24 38 dB
Filter data
ZI4.8 3.8 4.2 4.8 kΩ
QB57 40 52 (L1) 18 (L2) 55
ZF0.70 0.67 0.68 0.68 kΩ
Bandwidth (−3 dB) 3.6 3.8 3.6 4.0 kHz
S9kHz 35 31 36 42 dB
S18kHz 52 49 54 64 dB
S27kHz 63 58 66 74 dB
March 1989 18
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
Fig.16 Car radio application with capacitive diode tuning and electronic MW/LW switching. The circuit includes pre-stage AGC optimised for
good large-signal handling.
(1) Values of capacitors depend on the selected group of capacitive diodes BB112.
(2) For IF filter and coil data refer to Fig.1.
March 1989 19
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
PACKAGE OUTLINE
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
8
9
1
16
y
pin 1 index
UNIT A
max. A1A2A3bpcD
(1) E(1) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm
inches
1.75 0.25
0.10 1.45
1.25 0.25 0.49
0.36 0.25
0.19 10.0
9.8 4.0
3.8 1.27 6.2
5.8 0.7
0.6 0.7
0.3 8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
1.0
0.4
SOT109-1 91-08-13
95-01-23
076E07S MS-012AC
0.069 0.0098
0.0039 0.057
0.049 0.01 0.019
0.014 0.0098
0.0075 0.39
0.38 0.16
0.15 0.050
1.05
0.041
0.24
0.23 0.028
0.020 0.028
0.012
0.01
0.25
0.01 0.004
0.039
0.016
0 2.5 5 mm
scale
SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
March 1989 20
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“IC Package Databook”
(order code 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
•A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
•The longitudinal axis of the package footprint must be
parallel to the solder flow.
•The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
March 1989 21
Philips Semiconductors Product specification
AM receiver circuit TDA1072AT
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
