1www.diodes.com June 2019
Diodes Incorporated
PI3DBS16412
Document Number DS40277 Rev 4-2
Features
4 Dierential Channel, 2:1 Mux/DeMux
Up to 20 Gbps for applications including USB3.0, USB3.1,
10GE, underbolt 3, and SAS3.0
Bi-directional operation
3dB bandwith: 13 GHz
Low Bit-to-Bit Skew, 3ps typ
Low channel-to-channel skew, 10ps typ
Low insertion loss: -1.3dB@5 GHz, -1.3dB@8 GHz ,
-2dB@10 GHz
Return loss: -21dB@5 GHz, -13dB@8 GHz, -9dB@10 GHz
Low power consumption - 300µA typ
Supply Voltage 3.3V
Industrial Temperature Range: -40oC to 85oC
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Packaging (Pb-free & Green):
– 42-contact, TQFN (ZH42), 3.5x9mm
– 40-contact, TQFN (ZLC40), 3x6mm
Description
e PI3DBS16412 is an 8 to 4 dierential channel multiplexer/
demultiplexer switch. is solution can switch multiple signal
types up to data rate of 20Gbps. Using a unique design technique,
Diodes has been able to minimize the impedance of the switch
such that the attenuation observed through the switch is minimal.
e unique design technique also oers a layout targeted for
USB3.0, USB3.1, 10GE, underbolt 3, and SAS3.0 signals, which
minimizes the channel to channel skew as well as channel to
channel crosstalk as required by high speed signals.
Application
Routing high speed differential signals such as USB3.1 Gen
2, SAS3, PCIe4, TB3
Block Diagram
A1-
A1+
A0-
A0+
A3-
A3+
A2-
A2+
B0+
B0-
B1+
B1-
C0+
C0-
C1+
C1-
B2+
B2-
B3+
B3-
C2+
C2-
C3+
C3-
SEL1
SEL2
PD1
PD2
Control
A product Line of
Diodes Incorporated
PI3DBS16412
3.3V, 1-20Gbps 2-Lane 2:1 Mux/De-Mux Switch
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s denitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are dened as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm
antimony compounds.
b
P
Lead-free Green
2
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PI3DBS16412
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Diodes Incorporated
PI3DBS16412
Document Number DS40277 Rev 4-2
Pin Configuration: 40-TQFN (ZLC)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
34
33
32
31
30
29
28
27
26
25
24
23
22
40 39 38 37
15 16 17 18
GND
V
DD
GND
PD1
GND
V
DD
B0+
B1+
B1-
C0+
C0-
C1+
C1-
V
DD
GND
B2+
B2-
B3+
B3-
C2+
C2-
A0+
A0-
V
DD
A1+
A1-
SEL1
V
DD
PD2
A2+
A2-
V
DD
GND
A3+
A3-
21
19 20
36 35
C3-
C3+ B0-
GND
SEL2
Pin Configuration: 42-TQFN (ZH)
Truth Table
Function SEL1 PD1
Power down & hi_z switches A0 & A1 x 1
A0 → B0
A1 → B1 0 0
A0 → C0
A1 → C1 1 0
Function SEL2 PD2
Power down & hi_z switches A2 & A3 x 1
A2 → B2
A3 → B3 0 0
A2 → C2
A3 → C3 1 0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
42 41 40 39
18 19 20 21
NC
DNG
V
DD
DNG
NC
DNG
V
DD
DNG
B0+
B0-
B1+
B1-
C0+
C0-
C1+
C1-
VDD
B2+
B2-
B3+
B3-
C2+
C2-
C3+
C3-
PD1
A0+
A0-
GND
VDD
A1+
A1-
SEL1
VDD
PD2
A2+
A2-
VDD
GND
A3+
A3-
SEL2
3
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PI3DBS16412
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Diodes Incorporated
PI3DBS16412
Document Number DS40277 Rev 4-2
Pin Description
Pin #
Pin Name I/O Description42-TQFN 40-TQFN
2
3
1
2
A0+
A0 I/O Signal I/O, Channel 0, Port A, 100K pull-down
6
7
4
5
A1+
A1– I/O Signal I/O, Channel 1, Port A, 100K pull-down
11
12
9
10
A2+
A2– I/O Signal I/O, Channel 2, Port A, 100K pull-down
15
16
13
14
A3+
A3– I/O Signal I/O, Channel 3, Port A, 100K pull-down
38
37
36
35
B0+
B0− I/O Signal I/O, Channel 0, Port B
36
35
34
33
B1+
B1− I/O Signal I/O, Channel 1, Port B
29
28
26
25
B2+
B2− I/O Signal I/O, Channel 2, Port B
27
26
24
23
B3+
B3− I/O Signal I/O, Channel 3, Port B
34
33
32
31
C0+
C0– I/O Signal I/O, Channel 0, Port C
32
31
30
29
C1+
C1– I/O Signal I/O, Channel 1, Port C
25
24
22
21
C2+
C2– I/O Signal I/O, Channel 2, Port C
23
22
20
19
C3+
C3− I/O Signal I/O, Channel 3, Port C
8, 17 6, 16 SEL_X IOperation mode Select
(when SEL=0: AB, when SEL=1: AC
5, 9, 13, 20,
30, 40
3, 7, 11, 17,
28, 38 VDD Pwr 3.3V ±10% Positive Supply Voltage
4, 14, 19,
21, 39, 41,
Center Pad
12, 15, 18,
27, 37, 40,
Center Pad
GND Pwr Power ground
1, 10 39, 8 PD_X IPower Down Selet PD_X = 0, Device enable, PD_X = 1, Device disable
channel stay hi_z
18, 42 NC No Connect
4
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PI3DBS16412
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Diodes Incorporated
PI3DBS16412
Document Number DS40277 Rev 4-2
Storage Temperature ....................................................–65°C to +150°C
Supply Voltage to Ground Potential ................................–0.5V to +3.7V
Channel DC Input Voltage ................................................–0.5V to 1.5V
DC Output Current .......................................................................120mA
Power Dissipation ........................................................................... 0.5W
Control Logic DC Input Voltage .................................................... –0.5V
Maximum Stress Voltage (MSV) ...................................................... 3.8V
ESD (HBM) ...................................................................................... 1KV
Note:
Stresses greater than those listed under MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of
this specication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
Recommended Operating Conditions
Symbol Parameter Conditions Min. Typ. Max. Units
VDD 3.3V Power Supply 3.0 3.3 3.6 V
IDD Current consumption in normal operation SEL = GND or VDD, PD = Low 0.5 1.8 mA
IDDQ Current consumption when all switches
are disabled VDD = 3.3V, PD = High 0.3 mA
PDD Total Power from VDD 3.3V supply Control pins = GND or VDD 2 mW
PDDQ Power consumption when all switches
are disabled VDD = 3.3V, PD = High 1.1 mW
TAOperating temperature range -40 85
o
C
Electrical Characteristics
DC Electrical Characteristics for Switching over Operating Range
Parameters Description Test Conditions(1) Min. Ty p.(1) Max. Units
VIH - cntrl
signals Input HIGH Voltage for SEL and PD VDD = 3.3V 1.4
VVIL - cntrl
signals Input LOW Voltage for SEL and PD VDD = 3.3V 0.4
VIK
Clamp Diode Voltage VDD = Max., Iinput = –18mA 0.7 –1.2
IIH_ctrl Input HIGH Current for SEL and PD VDD = Max., Vinput = 3.3V –50 +50 µA
IIL_ctrl Input LOW Current for SEL and PD VDD = Max., Vinput = 0V –10 +10
IOZH HighZ HIGH Current, switch I/O pins VDD = 3.3V., Vinput = 1.0V –10 +10 µA
IOZL HighZ LOW Current, switch I/O pins VDD = Max., Vinput = 0V –10 +10 µA
IIH
Input HIGH Current for ANVDD = Max., Vinput = 1.2V -20 +20 µA
Input HIGH Current for BN, CNVDD = Max., Vinput = 1.2V -10 +10 µA
IIL Input LOW Current for AN, BN & CNVDD = Max., Vinput = 0V -10 +10 µA
Vp Max voltage pass through tolerance
analog switches (See Test Circuit) VDD = 3.3V, IPASS = 10mA 1 V
VIN Analog Signal to input of switch 1.1 1.2 V
Note:
1. Typical values are at VDD = 3.3V, TA = 25°C ambient and maximum loading.
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PI3DBS16412
Document Number DS40277 Rev 4-2
Dynamic Electrical Characteristics
Parameter Description Test Conditions Min. Ty p.(1) Max. Units
DDIL Dierential Insertion Loss
f=2.5GHz
f=4.0GHz
f=5.0GHz
f=8.0GHz
f=10.0GHz
-0.8
-0.9
-1.2
-1.3
-2.0
dB
DDRL Dierential Return Loss
f= 2.5GHz
f= 4.0GHz
f= 5.0GHz
f= 8.0GHz
f=10.0GHz
-25.0
-24.0
-21.0
-13.0
-9.0
dB
DDOI Dierential OFF Isolation
f= 2.5GHz
f= 4.0GHz
f= 5.0GHz
f= 8.0GHz
f=10.0GHz
-27.0
-21.0
-19.0
-18.0
-19.0
dB
DDXT Dierential Crosstalk
f= 2.5GHz
f= 4.0GHz
f= 5.0GHz
f=8.0GHz
f=10.0GHz
-30.0
-29.0
-29.0
-30.0
-33.0
dB
BW 3dB Bandwidth 13 GHz
Symbol Parameter Test Conditions Min. Ty p. Max. Units
t
PZH
, t
PZL
Line Enable Time - SEL to AN, BN, CN200 350 ns
t
PHZ
, t
PLZ
Line Disable Time - SEL to AN, BN, CN200 350 ns
tPLH Propagation Delay, LOW to HIGH 50 ps
tPHL Propagation Delay, HIGH to LOW 50 ps
tb-b Bit-to-bit skew within the same dierential pair 3 10 ps
tch-ch Channel-to-channel skew 10 20 ps
Switching Characteristics
6
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Document Number DS40277 Rev 4-2
+
+
BALANCED
PORT1
DUT
+
50
50
+
BALANCED
PORT2
50
50
Diff. Near End Xtalk Test Circuit
+
+
BALANCED
PORT1
BALANCED
PORT2
DUT
+
50
50
Diff. Off Isolation Test Circuit
+
+
BALANCED
PORT1
BALANCED
PORT2
DUT
Diff. Insertion Loss and Return Loss Test Circuit
Test Circuit for Electrical Characteristics(1-5)
Notes:
1. CL = Load capacitance: includes jig and probe capacitance.
2. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator
3. Output 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
output 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
4. All input impulses are supplied by generators having the following characteristics: PRR ≤ MHz, ZO = 50Ω, tR ≤ 2.5ns, tF ≤ 2.5ns.
5. The outputs are measured one at a time with one transition per measurement.
Pulse
Generator D.U.T
VIN
RT
SEL
VDD
VOUT
4pF
CL
600-ohm
600-ohm
2.0V
7
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PI3DBS16412
Document Number DS40277 Rev 4-2
Switching Waveforms
Voltage Waveforms Enable and Disable Times
tPLZ
VDD/2 VDD/2
VDD
VOH=VP
0V
VOL
VSwing/2
tPHZ
tPZL
tPZH
Output 1
Output 2
VOL
SEL
VOL + 0.15V
VOH - 0.15V
VSwing/2
VOH=VP
Switch Position
Test Switch
tPLZ, tPZL 2.0V
tPHZ, tPZH GND
Test Circuit for Propagation Delay
IN+
IN-
OUT+
OUT-
50Ω
50Ω
8
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PI3DBS16412
Document Number DS40277 Rev 4-2
Differential Input/Output Signal Waveform
IN+ IN-
OUT+ OUT-
0V
0V
tPLH tPHL
Test Circuit for SEL Switching Time
Test Circuit for Max Voltage Pass through
V
IN
V
OUT
V
DD
I
PASS
PI3DBS
16412ZHE
YYWWXX
YY: Year
WW: Workweek
1st X: Assembly Code
2nd X: Fab Code
Part Marking
ZH Package ZLC Package
PI3DBS16
412ZLCE
YYWWXX
YY: Year
WW: Workweek
1st X: Assembly Code
2nd X: Fab Code
9
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PI3DBS16412
Document Number DS40277 Rev 4-2
17-0266
Packaging Mechanical: 42-TQFN (ZH)
10
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PI3DBS16412
Document Number DS40277 Rev 4-2
Packaging Mechanical: 40-TQFN (ZLC)
Ordering Information
Ordering Number Package Code Package Description
PI3DBS16412ZHEX ZH 42-Contact, Very in Quad Flat No-Lead (TQFN)
PI3DBS16412ZLCEX ZLC 40-Pin, 3x6mm (TQFN)
For latest package info.
please check: http://www.diodes.com/design/support/packaging/pericom-packaging/packaging-mechanicals-and-thermal-characteristics/
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s denitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are dened as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm
antimony compounds.
4. E = Pb-free and Green
5. X sufx = Tape/Reel
11
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Document Number DS40277 Rev 4-2
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT
LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER
THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modications, enhancements, improvements, corrections or other changes without further no-
tice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or
any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer
or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all
the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes
Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein
may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the nal and determi-
native format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specically not authorized for use as critical components in life support devices or systems without the express written approval
of the Chief Executive Ofcer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably
expected to result in signicant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramications of their life support devices or systems, and acknowledge
and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated
products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by
Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes
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