Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ100
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use
in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V
ICCollector current (DC) - 1.0 A
ICM Collector current peak value - 2.0 A
Ptot Total power dissipation Tlead ≤ 25 ˚C - 2 W
VCEsat Collector-emitter saturation voltage IC = 0.75 A;IB = 150mA 0.24 1.0 V
hFE IC = 0.75 A;VCE = 5 V 14 20
tfi Fall time (Inductive) IC = 1.0 A;IBON = 200mA 50 70 ns
PINNING - TO92 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector to emitter voltage VBE = 0 V - 700 V
VCEO Collector to emitter voltage (open base) - 400 V
VCBO Collector to base voltage (open emitter) - 700 V
ICCollector current (DC) - 1.0 A
ICM Collector current peak value - 2.0 A
IBBase current (DC) - 0.5 A
IBM Base current peak value - 1.0 A
Ptot Total power dissipation Tlead ≤ 25 ˚C - 2 W
Tstg Storage temperature -65 150 ˚C
TjJunction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-lead Thermal resistance - 60 K/W
junction to lead
Rth j-a Thermal resistance pcb mounted; lead length = 4mm 150 - K/W
Junction to ambient
b
c
e
321
September 1999 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ100
STATIC CHARACTERISTICS
Tlead = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES,ICBO Collector cut-off current 1VBE = 0 V; VCE = VCESMmax - 0.8 100 µA
ICES VBE = 0 V; VCE = VCESMmax; - 2.0 500 µA
Tj = 125 ˚C
ICEO Collector cut-off current VCEO = VCEOMmax(400V) - - 100 µA
IEBO Emitter cut-off current VEB = 9 V; IC = 0 A - 0.05 100 µA
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 10mA; 400 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 0.75 A;IB = 0.15 A - 0.24 1.0 V
VBEsat Base-emitter saturation voltage IC = 0.75 A; IB =0.15 A - 0.93 1.3 V
hFE DC current gain IC = 10mA; VCE = 5 V 11 20 27
hFE IC = 100mA; VCE = 5 V 12.5 21 31
hFE IC = 0.75 A; VCE = 5 V 9 14 20
DYNAMIC CHARACTERISTICS
Tlead = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) ICon = 1.0 A; IBon = -IBoff = 200mA;
RL = 75 ohms; VBB2 = 4 V;
ton Turn-on time 0.65 0.88 µs
tsTurn-off storage time 0.88 1.2 µs
tfTurn-off fall time 250 338 ns
Switching times (inductive load) ICon = 1.0 A; IBon = 200mA; LB = 1 µH;
-VBB = 5 V
tsTurn-off storage time 0.51 0.7 µs
tfTurn-off fall time 50 70 ns
Switching times (inductive load) ICon = 1.0 A; IBon = 200mA; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
tsTurn-off storage time - 1.4 µs
tfTurn-off fall time - 130 ns
1 Measured with half sine-wave voltage (curve tracer).
September 1999 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ100
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.3. Normalised power dissipation.
PD% = 100
⋅
PD/PD
25˚C
= f (T
mb
)
!
Fig.4. Transient thermal impedance.
Zth
j-lead
= f(t); parameter D = t
p
/T
Fig.5. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
Fig.6. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
1u 100u 10m 1 100
t / s
Zth / (K/W)
100
10
1
0.1
0.01
D=0
0.5
0.2
0.1
0.05
0.02
10u 1m 100m 10
D =
tp
T
T
P
t
D
t
p
VCE / V min
VCEOsust
IC / mA
10
100
250
0
0.001 0.01 0.1 1 2 3 5
1
5
10
15
20
30
IC/A
HFE
VCE = 1V
25 C
-40 C
125 C
0 20 40 60 80 100 120 140
Tmb / C
PD% Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.001 0.01 0.1 1 2 3 5
1
10
30
IC/A
HFE
VCE = 5V
25 C -40 C
125 C
September 1999 3 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ100
Fig.7. Collector-Emitter saturation voltage. Fig.8. Base-Emitter saturation voltage.
Solid Lines = typ values, I
C
/I
B
= 3 Solid Lines = typ values, I
C
/I
B
= 3
INDUCTIVE SWITCHING
Fig.9. Test circuit inductive load. Fig.10. Switching times waveforms with inductive load.
V
CC
= 300 V; -V
BE
= 5 V, L
C
= 200
µ
H; L
B
= 1
µ
H
Fig.11. Inductive switching. Fig.12. Inductive switching.
tfi = f(h
FE
) tfi = f(I
C
)
0.01 0.1 1 2
0
0.5
1
1.5
2
IC, COLLECTOR CURRENT/A
VCEsat VOLTAGE/V
IC/IB = 3
25 C
-40 C
125 C
0.01 0.1 1 2
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
IC, COLLECTOR CURRENT/A
VBEsat VOLTAGE/V
IC/IB = 3
25 C
125 C
-40 C
LB
IBon
-VBB
LC
T.U.T.
VCC
IC
IB
ICon
IBon
-IBoff
t
t
ts tf
toff
10 %
90 %
246810
0
25
50
75
100
125
150
175
200
225
250
275
HFE GAIN (IC/IB)
tfi (ns)
11
IC = 2A
IC = 1A
IC = 1.5A
0.8 1 1.2 1.4 1.6 1.8 2 2.2
0
25
50
75
100
125
150
175
200
225
250
275
IC COLLECTOR CURRENT /A
tfi (ns)
IC/IB = 10
IC/IB = 5
IC/IB =3
September 1999 4 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ100
Fig.13. Inductive switching. Fig.14. Inductive switching.
tsi = f(h
FE
) tsi = f(I
C
)
RESISTIVE SWITCHING
Fig.15. Test circuit resistive load. V
IM
= -6 to +8 V Fig.16. Switching times waveforms with resistive load.
V
CC
= 250 V; t
p
= 20
µ
s;
δ
= t
p
/ T = 0.01.
R
B
and R
L
calculated from I
Con
and I
Bon
requirements.
Fig.17. Resistive switching. Fig.18. Resistive switching.
ton = f(I
C
) ts = f(I
C
)
246810
0
0.25
0.5
0.75
1
1.25
HFE GAIN (IC/IB)
tsi (us)
11
IC = 2A
IC = 1A
IC = 1.5A
0.8 1 1.2 1.4 1.6 1.8 2 2.2
0
0.25
0.5
0.75
1
1.25
IC COLLECTOR CURRENT /A
tsi (us)
IC/IB = 10
IC/IB = 5
IC/IB = 3
tp
T
VCC
R
RT.U.T.
0
VIM B
L
IC
IB
10 %
10 %
90 %
90 %
ton toff
ts tf
IBon
-IBoff
ICon
tr 30ns
0 0.5 1 1.5 2
0
0.5
1
1.5
2
IC COLLECTOR CURRENT (A)
ton (us)
IC/IB = 3
IC/IB = 5
IC/IB = 10
0 0.5 1 1.5 2 2.5
0
0.5
1
1.5
2
2.5
3
IC COLLECTOR CURRENT (A)
ts (us)
IC/IB = 3
IC/IB = 10
IC/IB = 5
September 1999 5 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ100
Fig.19. Resistive switching.
tf = f(I
C
)
0 0.5 1 1.5 2
50
100
1,000
2,000
5,000
IC COLLECTOR CURRENT (A)
tf (ns)
IC/IB = 3
IC/IB = 10
IC/IB = 5
Fig.20. Test Circuit for the RBSOA test.
V
cl
≤
700V; V
cc
= 150V; L
B
= 1
µ
H; L
c
= 200
µ
HFig.21. Reverse
bias safe operating area T
j
≤
T
jmax
for -V
BE
= 9V, 5V,3V & 1V
LB
IBon
-VBB
LC
T.U.T.
VCC
PROBE POINT
VCL(RBSOAR)
0 100 200 300 400 500 600 700 800
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
VCEclamp/V
IC/A
-9V
-5V
-3V
-1V
September 1999 6 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ100
MECHANICAL DATA
Fig.22. TO92 ; plastic envelope; Net Mass: 0.2 g
Notes
1. Epoxy meets UL94 V0 at 1/8".
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43 97-02-28
A L
0 2.5 5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
September 1999 7 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ100
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1999 8 Rev 1.000
