SIGC158T120R3
Edited by INFINEON Technologies AI PS DD HV3, L7691A, Edition 2, 04.09.2003
IGBT3 Chip
This chip is used for:
• power module
FEATURES:
• 1200V Trench + Field Stop technology
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
Applications:
• drives
G
C
E
Chip Type VCE ICn Die Size Package Ordering Code
SIGC158T120R3 1200V
150A 12.56 x 12.56 mm2
sawn on foil Q67050-
A4109-A001
MECHANICAL PARAMETER:
Raster size 12.56 x 12.56
Emitter pad size 8x(2.646 x 5.454)
Gate pad size 1.139 x 1.139
mm
Area total / active 157.8 / 128.1 mm2
Thickness 140 µm
Wafer size 150 mm
Flat position 90 grd
Max.possible chips per wafer 86 pcs
Passivation frontside Photoimide
Emitter metallization 3200 nm AlSiCu
Collector metallization 1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond electrically conductive glue or solder
Wire bond Al, <500µm
Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm
Recommended Storage Environment store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
SIGC158T120R3
Edited by INFINEON Technologies AI PS DD HV3, L7691A, Edition 2, 04.09.2003
MAXIMUM RATINGS:
Parameter Symbol Value Unit
Collector-emitter voltage, Tj=25 °C VCE 1200 V
DC collector current, limited by Tjmax IC 1 ) A
Pulsed collector current, tp limited by Tjmax Icpuls 450 A
Gate emitter voltage VGE ±20 V
Operating junction and storage temperature Tj, Tstg -55 ... +150 °C
1 ) depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Value
Parameter Symbol Conditions min. typ. max. Unit
Collector-emitter breakdown voltage V(BR)CES VGE=0V , IC= 6 mA 1200
Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=150A 1.4 1.7 2.1
Gate-emitter threshold voltage VGE(th) IC=6mA , VGE=VCE 5.0 5.8 6.5
V
Zero gate voltage collector current ICES VCE=1200V , VGE=0V 20 µA
Gate-emitter leakage current IGES VCE=0V , VGE=20V 600 nA
Integrated gate resistor RGint 5 Ω
ELECTRICAL CHARACTERISTICS (tested at component):
Value
Parameter Symbol Conditions min. typ. max. Unit
Input capacitance Ciss 10766
Output capacitance Coss 563
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz 488
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Value
Parameter Symbol Conditions 1) min. typ. max. Unit
Turn-on delay time td(on) 300
Rise time tr 95
Turn-off delay time td(off) 650
Fall time tf
Tj=125°C
VCC=600V,
IC=150A,
VGE=-15/15V,
RG= 8.2Ω 180
ns
1) values also influenced by parasitic L- and C- in measurement and package.
SIGC158T120R3
Edited by INFINEON Technologies AI PS DD HV3, L7691A, Edition 2, 04.09.2003
CHIP DRAWING:
SIGC158T120R3
Edited by INFINEON Technologies AI PS DD HV3, L7691A, Edition 2, 04.09.2003
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet tbd
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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