IRFY120M - International Rectifier

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 10V, TC = 25°C Continuous Drain Current 16*

ID @ VGS = 10V, TC = 100°C Continuous Drain Current 16*

IDM Pulsed Drain Current ➀156

PD @ TC = 25°C Max. Power Dissipation 100 W

Linear Derating Factor 0.8 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy ➁100 mJ

IAR Avalanche Current ➀16* A

EAR Repetitive Avalanche Energy ➀10 mJ

dv/dt Peak Diode Recovery dv/dt ➂4.5 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Lead Temperature 300(0.063in./1.6mm from case for 10 sec)

Weight 3.3 (Typical) g

PD - 94181

HEXFET® MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as v oltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are w ell-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

POWER MOSFET

THRU-HOLE (TO-257AA)

4/18/01

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60V, N-CHANNEL

HEXFET

MOSFET TECHNOLOGY

TO-257AA

Product Summary

Part Number RDS(on) IDEyelets

IRFY044 0.040 Ω 16*A Glass

IRFY044M 0.040 Ω 16*A Glass

Features:

nSimple Drive Requirements

nEase of Paralleling

nHermetically Sealed

nElectrically Isolated

nGlass Eyelets

nFor Space Level Applications

Refer to Ceramic Version Part

Numbers IRFY044C, IRFY044CM

For footnotes refer to the last page

IRFY044,IRFY044M

* Current is limited by pin diameter

IRFY044, IRFY044M

2www.irf.com

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter M in Typ Max Un its T e st Co nditions

BVDSS Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.68 — V/°C Reference to 25°C, ID = 1.0mA

Voltage

RDS(on) Static Drain-to-Source On-State — — 0.04 ΩVGS = 10V, ID = 16A

Resistance

VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA

gfs Forward Transconductance 17 — — S ( )V

DS > 15V, IDS = 16A ➃

IDSS Zero Gate Voltage Drain Current — — 25 VDS= 48V ,VGS=0V

— — 250 VDS = 48V,

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V

IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V

QgTotal Gate Charge — — 88 VGS =10V, ID = 16A

Qgs Gate-to-Source Charge — — 15 nC VDS = 30V

Qgd Gate-to-Drain (‘Miller’) Charge — — 52

td(on) Turn-On Delay Time — — 23 VDD = 30V, ID = 16A,

trRise Time — — 130 RG = 9.1Ω

td(off) Turn-Off Delay Time — — 81

tfFall Time — — 79

LS + LDTotal Inductance — 6.8 —

Ciss Input Capacitance — 2400 — VGS = 0V, VDS = 25V

Coss Output Capacitance — 1100 — pF f = 1.0MHz

Crss Reverse Transfer Capacitance — 230 —

Ω

➃

µA

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Thermal Resistance

Parameter Min Typ Max Units T est Conditions

RthJC Junction-to-Case — — 1.25

RthCS Case-to-sink — 0.21 —

RthJA Junction-to-Ambient — — 80 Typical socket mount

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units T est Conditions

ISContinuous Source Current (Body Diode) — — 16*

ISM Pulse Source Current (Body Diode) ➀— — 156

VSD Diode Forward Voltage — — 2.5 V Tj = 25°C, IS = 16A, VGS = 0V ➃

trr Reverse Recovery Time — — 220 nS Tj = 25°C, IF = 16A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge — — 1.6 µC VDD ≤ 50V ➃

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

* Current is limited by pin diameter

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IRFY044, IRFY044M

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

ID=16A

IRFY044, IRFY044M

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

ID=16A

13a

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IRFY044, IRFY044M

Fig 10a. Switching Time Test Circuit

90%

10%

GS t

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

RGD.U.T.

10V

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

IRFY044, IRFY044M

6www.irf.com

Charge

D.U.T. VDS

3mA

VGS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

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IRFY044, IRFY044M

➂ ISD ≤ 16A, di/dt ≤ 100A/µs,

VDD ≤ 60V, TJ ≤ 150°C

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ VDD = 25V, star ting TJ = 25°C, L= 0.78mH

Peak IL = 16A, VGS = 10V

Foot Notes:

Case Outline and Dimensions — TO-257AA

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/01