3MN03SF
No.8651-1/4
Features
Small package allows applied sets to be made small and thin.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 30 V
Collector-to-Emitter Voltage VCEO 20 V
Emitter-to-Base Voltage VEBO 5V
Collector Current IC30 mA
Collector Dissipation PCMounted on a ceramic board (600mm20.8mm) 150 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=10V, IE=0A 0.1 µA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 0.1 µA
DC Current Gain hFE VCE=6V, IC=1mA 60 200
Gain-Bandwidth Product fTVCE=6V, IC=1mA 200 320 MHz
Reverse T ransfer Capacitance Cre VCB=6V, f=1MHz 0.8 1.3 pF
Noise Figure NF VCE=6V, IC=1mA, f=100MHz 3.0 dB
Marking : WA
Ordering number : EN8651A
72606 / 32406 MS IM TB-00002142 / D2805AA MS IM TB-00001950
3MN03SF NPN Epitaxial Planar Silicon Transistor
High-Frequency General-Purpose
Amplifier Applications
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
3MN03SF
No.8651-2/4
Package Dimensions
unit : mm
7029-002
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Collector Current, IC -- mA
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
DC Current Gain, hFE
hFE -- IC
Gain-Bandwidth Product, fT -- MHz
fT -- IC
Collector Current, IC -- mA
IT09499
6
5
4
3
2
1
0024 8106
IT09498
IT09501IT09500
3
2
7
5
3
100
0.1 23 751.0 23 75235
10
1000
100
7
7
5
3
2
1.0 5723 10 523
30µA
40µA
50µA
20µA
10µA
IB=0µA
VCE=12V
6V
3V
VCE=6V VCE=6V
30
20
10
00 0.2 0.4 0.6 1.00.8
VCE=6V
0.6
0.25
0.2
0.070.07
1.4
0.45
1
3
2
0.3 0.3
1.4
0.8
0.1
2
3
1
Top View
Bottom View
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
3MN03SF
No.8651-3/4
Power Gain, PG -- dB
Noise Figure, NF -- dB
VCE(sat) -- IC
Collector Current, IC -- mA
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob
-- pF
Cob -- VCB
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Base Voltage, VCB -- V
Reverse Transfer Capacitance, Cre
-- pF
Cre -- VCB
5
3
2
1.0
7
10
7
5
3
0.1 23 751.0 23 75235
10 IT09502
IT09504
5
3
7
5
3
2
0.1
2
1.0 23 752375
10
f=1MHz
5
3
2
2
1.0
7
7
5
3
0.1 23 751.0 23 75235
10
f=1MHz
IC / IB=10
0
18
16
14
12
10
8
6
4
2
IT09505
357
1.0 10
235722
VCE=6V
f=100MHz
NF
PG
IT09503
PG, NF -- IC
IT09807
0 20 40 60 80 100 120 140 160
0
50
100
150
200
PC -- Ta
Collector Dissipation, PC -- mW
Ambient Temperature, Ta -- °C
Mounted on a ceramic board (600mm
2
0.8mm)
3MN03SF
No.8651-4/4
PS
This catalog provides information as of March, 2006. Specifications and information herein are subject
to change without notice.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
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