2013-02-06
3
ESD8V0L...
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Reverse working voltage VRWM -8 - 14 V
Breakdown voltage
I(BR) = 1 mA, from pin 2 to 1, ESD8V0L1B...
I(BR) = 1 mA, from pin 1 to 2, ESD8V0L1B...
I(BR) = 1 mA, from pin 1/2 to 3, ESD8V0L2B...
I(BR) = 1 mA, from pin 3 to 1/2, ESD8V0L2B...
I(BR) = 1 mA, from pin 1 to 2, ESD8V0L2B...
V(BR)
14.5
8.5
14.5
8.5
23
-
-
-
-
-
-
-
-
-
-
Reverse current
VR = 3 V, between all pins
IR- < 1 50 nA
Clamping voltage (contact)1)
VESD = +15 kV , from pin 1 to 2, ESD8V0L1B...
VESD = -15 kV, from pin 1 to 2, ESD8V0L1B...
VESD = +15 kV , from pin 1/2 to 3, ESD8V0L2B...
VESD = -15 kV , from pin 1/2 to 3, ESD8V0L2B...
VCL
-
-
-
-
21
16
26
20
-
-
-
-
V
Line capacitance2)
VR = 0 V, f = 1 MHz, ESD8V0L1B...
VR = 0 V, f = 1 MHz, ESD8V0L2B...,
from pin 1/2 to 3
from pin 1 to 2, pin 3 is not connected
CT
-
-
-
8.5
4
2
13
7
4
pF
Dynamic resistance ( tp=30ns )
ESD8V0L1B...
ESD8V0L2B...
RD
-
-
0.3
0.6
-
-
Ω
1VESD according to IEC61000-4-2
2Total capacitance line to ground