IRG4BC10SD-SPbF
IRG4BC10SD-LPbF
08/27/04
www.irf.com 1
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
Standard Speed
CoPack IGBT
• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D2Pak & TO-262 packages
• Lead-Free
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 14
IC @ TC = 100°C Continuous Collector Current 8.0
ICM Pulsed Collector Current 18 A
ILM Clamped Inductive Load Current 18
IF @ TC = 100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 18
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 38
PD @ TC = 100°C Maximum Power Dissipation 15
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 3.3
RθJC Junction-to-Case - Diode ––– ––– 7.0 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.50 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 80
RθJA Junction-to-Ambient (PCB Mount, steady state)––– ––– 40
Wt Weight ––– 2.0(0.07) ––– g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
D2Pak
IRG4BC10SD-S TO-262
IRG4BC10SD-L
PD - 95780
IRG4BC10SD-S/LPbF
2www.irf.com
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage — 0.64 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 1.58 1.8 IC = 8.0A VGE = 15V
— 2.05 — V IC = 14.0A See Fig. 2, 5
— 1.68 — IC = 8.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, I C = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage — -9.5 — mV/°C VCE = V GE, I C = 250µA
gfe Forward Transconductance3.65 5.48 — S VCE = 100V, IC =8.0A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 1000 VGE = 0V, VCE = 600V, T J = 150°C
VFM Diode Forward Voltage Drop — 1 .5 1.8 V IC =4.0A See Fig. 13
— 1.4 1.7 IC =4.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA V GE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Details of note through are on the last page
QgTotal Gate Charge (turn-on) — 15 2 2 I C = 8.0A
Qge Gate - Emitter Charge (turn-on) — 2.42 3 .6 nC V CC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 6.53 9 .8 VGE = 15V
td(on) Turn-On Delay Time — 76 — TJ = 25°C
trRise Time — 32 — ns IC = 8.0A, VCC = 480V
td(off) Turn-Off Delay Time — 815 1200 VGE = 15V, RG = 100Ω
tfFall Time — 720 1080 Energy losses include "tail" and
Eon Turn-On Switching Loss — 0.31 — diode reverse recovery.
Eoff Turn-Off Switching Loss — 3.28 — m J See Fig. 9, 10, 18
Ets Total Switching Loss — 3.60 10.9
Ets Total Switching Loss — 1.46 2 .6 mJ I C = 5.0A
td(on) Turn-On Delay Time — 70 — TJ = 150°C, See Fig. 10,11, 18
trRise Time — 36 — ns IC = 8.0A, VCC = 480V
td(off) Turn-Off Delay Time — 890 — VGE = 15V, RG = 100Ω
tfFall Time — 89 0 — Energy losses include "tail" and
Ets Total Switching Loss — 3.83 — m J diode reverse recovery.
LEInternal Emitter Inductance — 7 .5 — nH Measured 5mm from package
Cies Input Capacitance — 280 — V GE = 0V
Coes Output Capacitance — 30 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 4 .0 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 28 42 n s TJ = 25°C See Fig.
—3857 T
J = 125°C 14 IF =4.0A
Irr Diode Peak Reverse Recovery Current — 2.9 5. 2 A TJ = 25°C See Fig.
— 3.7 6.7 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 40 60 nC TJ = 25°C See Fig.
— 70 105 TJ = 125°C 16 di/dt = 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 280 — A/µs TJ = 25°C See Fig.
During tb— 235 — TJ = 125°C 17
Parameter Min. Typ. Max. Units Conditions
IRG4BC10SD-S/LPbF
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
0.5 1.0 1.5 2.0 2.5 3.0
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
V = 1 5 V
80µs PU LSE WIDTH
GE
T = 25 C
J°
T = 150 C
J°
1
10
100
6 8 10 12
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50 V
5µs PULSE WIDTH
CC
T = 25 C
J°
T = 150 C
J°
5µs PULSE WIDTH
0.1 110 100
f , Frequency ( kH z )
0.0
2.0
4.0
6.0
8.0
10.0
Load Current ( A )
Du ty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reve rse recovery
Power Dissipation = 9.2W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
60% of ra ted
voltage
Ideal diodes
IRG4BC10SD-S/LPbF
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration ( s ec)
Thermal Response ( Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERM AL RESPONSE)
-60 -40 -20 020 40 60 80 100 120 140 160
1.00
1.50
2.00
2.50
3.00
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15 V
80 us PU LSE WIDTH
GE
I = A16
C
I = A8
C
I = A4
C
25 50 75 100 125 150
0
4
8
12
16
T , Case Temperatu re ( C)
Maximum DC Collector Current(A)
C°
IRG4BC10SD-S/LPbF
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020 40 60 80 100
3.30
3.35
3.40
3.45
3.50
3.55
3.60
R , Ga te Resista nce (Ohm)
Total Swi tchi ng Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 8A
CC
GE
J
C
°
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance Fig. 10 - Typical Switching Losses vs.
Junction Temperature
RG , Gate Resistance (Ω)
0 5 10 15 20
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 8A
CC
C
1 10 100
0
100
200
300
400
500
V , Collector-to-Emi tter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
Cies
Coes
Cres
-60 -40 -20 020 40 60 80 100 120 140 160
0.1
1
10
100
T , Junction Temperature ( C )
Total S witching Losses ( m J)
J°
R = Ohm
V = 15 V
V = 480V
G
GE
CC
I = A
16
C
I = A
8
C
I = A
4
C
100Ω
IRG4BC10SD-S/LPbF
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1
10
100
1 10 100 100
0
V = 20V
T = 125 C
GE
Jo
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Collector Current Fig. 12 - Turn-Off SOA
04812 16 20
0
3
6
9
12
15
I , Collector Current (A)
Total Switching Losses (mJ)
C
R = 100
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
100 Ω
0.1
1
10
1
00
0.0 1.0 2.0 3.0 4.0 5.0 6.0
FM
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
Forward Voltage Drop - VFM ( V )
Instantaneous Forward Current ( A )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
IRG4BC10SD-S/LPbF
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Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
di (rec) M/dt- (A /µs)
Qrr- (nC)
Irr- ( A)
trr- (nC)
2
0
2
5
3
0
3
5
4
0
4
5
5
0
100 1000
f
di /dt - (A/µs)
I = 8.0A
I = 4.0A
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
2
4
6
8
1
0
1
2
1
4
100 1000
f
I = 8.0A
I = 4.0A
V = 20 0V
T = 125°C
T = 25°C
R
J
J
di /dt - (A/µs)
F
F
0
40
80
1
20
1
60
2
00
100 1000
f
di /dt - (A/µs)
I = 8.0A
I = 4.0A
V = 200V
T = 1 25°C
T = 25°C
R
J
J
F
F
100
1
000
100 1000
f
di /dt - (A/µs)
A
I = 8.0A
I = 4.0A
V = 20 0V
T = 125°C
T = 25°C
R
J
J
F
F
IRG4BC10SD-S/LPbF
8www.irf.com
Same t ype
device as
D.U.T.
D.U.T.
430µF
80%
of Vce
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
∫
Vce ie dt
t2
t1
5% Vce
Ic
Ipk
Vcc 10% Ic
Vce
t1 t2
DUT VOLTAGE
AN D CURRENT
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
DIODE REVERSE
REC OVERY E NE RGY
tx
Eon =
∫
Erec = t4
t3
Vd id dt
t4
t3
DIODE RECOVERY
WAVEFORMS
Ic
Vpk
10% Vcc
Irr
10% Irr Vc
c
trr
∫
Qrr = trr
tx
id d t
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vd Ic dt
Vce Ic dt
Ic dt
t=5
µs
d(on)
t
t
f
t
r
90%
t
d(off)
10%
90%
10%
5%
C
I
C
E
on
E
off
ts on off
E = (E +E )
V
V
ge
IRG4BC10SD-S/LPbF
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Vg
GATE SIGNAL
DEVICE UNDER TES
T
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0 t1 t2
D.U.T.
V *
c
50V
L
1000V
6000µF
100V
Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit
RL=480V
4 X IC @25°C
0 - 480V
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
IRG4BC10SD-S/LPbF
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D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in ass embly line
position indicates "Lead-Free"
F530S
THIS IS AN IRF530S WITH
LO T CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASS EMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
F530S
A = AS SEMB L Y SITE CODE
WEE K 0 2
P = D E S IGNAT E S LE AD-F R E E
PRODU CT (OP TIONAL)
RECTIFIER
INTERNATIONAL
LOGO
LOT COD E
AS S EMBLY YEAR 0 = 2000
DATE CODE
PART NUMBE R
IRG4BC10SD-S/LPbF
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TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
AS S EMBLY
LOT CODE
RECTIFIER
INTERNATIONAL
ASSEMBLED ON WW 19, 1997
Note: "P" in assembly line
posi ti on i ndi cates " Lead-Free"
IN THE A SSEMBLY LINE " C" LOGO
THIS IS AN IRL3103L
LOT C ODE 1789
EXAMPLE:
LINE C
DATE CODE
WEEK 19
YEAR 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD -FREE
A = ASSEMB LY SITE CODE
WEE K 19
YEAR 7 = 1997
DATE CODE
OR
IRG4BC10SD-S/LPbF
12 www.irf.com
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
This only applies to TO-262 package.
This applies to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
F
EED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
F
EED DIRECTION
10.9 0 (.429)
10.7 0 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957
)
23.90 (.941
)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362
)
MIN.
30. 40 ( 1.1 97)
MAX.
26.40 (1.039)
24.40 (.961)
NOT E S :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
