PD - 95042 IRF7329PbF HEXFET(R) Power MOSFET l l l l l l Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel Lead-Free VDSS RDS(on) max (mW) ID 17@VGS = -4.5V 21@VGS = -2.5V 9.2A -12V 30@VGS = -1.8V 4.6A 7.4A Description New P-Channel HEXFET (R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -12 -9.2 -7.4 -37 2.0 1.3 16 8.0 -55 to + 150 V A W mW/C V C Thermal Resistance Symbol RJL RJA www.irf.com Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. Max. Units --- --- 20 62.5 C/W 1 10/7/04 IRF7329PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 --- --- -0.40 25 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.007 --- --- --- --- --- --- --- --- --- 38 6.8 8.1 10 8.6 340 260 3450 1000 640 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 17 VGS = -4.5V, ID = -9.2A m VGS = -2.5V, ID = -7.4A 21 30 VGS = -1.8V, ID = -4.6A -0.90 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -9.2A -1.0 VDS = -9.6V, VGS = 0V A -25 VDS = -9.6V, VGS = 0V, TJ = 70C -100 nA VGS = -8.0V 100 VGS = 8.0V 57 ID = -9.2A 10 nC VDS = -6.0V 12 VGS = -4.5V --- V DD = -6.0V ns --- ID = -1.0A --- RD = 6.0 --- VGS = -4.5V --- VGS = 0V --- pF VDS = -10V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units -2.0 -37 --- --- --- --- 50 48 -1.2 75 72 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, IF = -2.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7329PbF 100 100 VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V 10 1 -1.2V 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 -1.2V 10 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current () T J = 150C 10 T J = 25C VDS = -10V 20s PULSE WIDTH 1.8 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 Fig 2. Typical Output Characteristics 100 1.4 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20s PULSE WIDTH TJ = 150 C 1 0.1 -VDS , Drain-to-Source Voltage (V) 1.0 VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 2.2 ID = -9.2A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7329PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 4000 Ciss Coss = Cds + Cgd 3000 2000 Coss 1000 Crss -VGS , Gate-to-Source Voltage (V) 10 5000 10 VDS =-9.6V VDS =-6V 8 6 4 2 0 1 ID = -9.2A 0 100 0 10 -V DS, Drain-to-Source Voltage (V) 40 50 60 70 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -II D , Drain Current (A) -ISD , Reverse Drain Current (A) 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 TJ = 150 C 1 TJ = 25 C 0.1 0.2 0.4 0.6 0.8 Fig 7. Typical Source-Drain Diode Forward Voltage 100us 10 1ms 10ms TA = 25 C TJ = 150 C Single Pulse V GS = 0 V -VSD ,Source-to-Drain Voltage (V) 4 20 QG , Total Gate Charge (nC) 1.0 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7329PbF 10.0 VDS VGS -ID , Drain Current (A) 8.0 RD D.U.T. RG - + 6.0 VDD VGS Pulse Width 1 s Duty Factor 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 10% 150 TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.030 0.025 0.020 ID = -9.2A 0.015 0.010 0.0 2.0 4.0 6.0 -V GS, Gate -to -Source Voltage (V) 8.0 RDS (on) , Drain-to-Source On Resistance () RDS(on) , Drain-to -Source On Resistance () IRF7329PbF 0.030 VGS = -1.8V 0.025 0.020 VGS = -2.5V 0.015 VGS = -4.5V 0.010 4 6 8 10 12 14 -I D , Drain Current (A) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com IRF7329PbF 100 0.8 80 ID = -250A Power (W) -VGS(th) Gate threshold Voltage (V) 1.0 0.6 60 40 0.4 20 0.2 -75 -50 -25 0 25 50 75 100 T J , Temperature ( C ) 125 150 0 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com Fig 16. Typical Power Vs. Time 7 IRF7329PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 6X e e1 8X b 0.25 [.010] A MILLIMET ERS MAX A 5 INCHES MIN MAX .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER 8 www.irf.com IRF7329PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 www.irf.com 9