APTGF15X120T3G
APTGF15X120T3G – Rev 0 July, 2007
www.microsemi.com 1-6
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 25
IC Continuous Collector Current TC = 80°C 15
ICM Pulsed Collector Current TC = 25°C 60
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 140 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 30A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
31
14
R1
13
2
28
25
23
15
20
16
19
10
18 22
30
29
3
4
8
7
11
12
It is recommended to connect a decoupling capacitor
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4
VCES = 1200V
IC = 15A @ Tc = 80°C
Application
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• RoHS compliant
3 Phase bridge
N
PT IGBT Power Module
APTGF15X120T3G
APTGF15X120T3G – Rev 0 July, 2007
www.microsemi.com 2-6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 250
ICES Zero Gate Voltage Collector Current VGE = 0V
VCE = 1200V Tj = 125°C 500
µA
Tj = 25°C 2.5 3.2 3.7
VCE(sat) Collector Emitter Saturation Voltage VGE =15V
IC = 15A Tj = 125°C 4.0 V
VGE(th) Gate Threshold Voltage VGE = VCE, IC = 1mA 4 6 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 1000
Coes Output Capacitance 150
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 70
pF
Qg Total gate Charge 99
Qge Gate – Emitter Charge 10
Qgc Gate – Collector Charge
VGE = 15V
VBus = 600V
IC =15A 70
nC
Td(on) Turn-on Delay Time 60
Tr Rise Time 50
Td(off) Turn-off Delay Time 315
Tf Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 15A
RG = 33Ω 30
ns
Td(on) Turn-on Delay Time 60
Tr Rise Time 50
Td(off) Turn-off Delay Time 356
Tf Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 15A
RG = 33Ω 40
ns
Eon Turn-on Switching Energy Tj = 125°C 2
Eoff Turn-off Switching Energy
VGE = 15V
VBus = 600V
IC = 15A
RG = 33Ω Tj = 125°C 1
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 100
IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA
IF DC Forward Current Tc = 80°C 15 A
IF = 15A 2.8 3.3
IF = 30A 3.4
VF Diode Forward Voltage
IF = 15A Tj = 125°C 2.4
V
Tj = 25°C 240
trr Reverse Recovery Time
Tj = 125°C 290
ns
Tj = 25°C 260
Qrr Reverse Recovery Charge
IF = 15A
VR = 800V
di/dt =200A/µs
Tj = 125°C 960 nC
APTGF15X120T3G
APTGF15X120T3G – Rev 0 July, 2007
www.microsemi.com 3-6
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
B 25/85 T
25 = 298.15 K 3952 K
−
=
TT
B
R
RT
11
exp
25
85/25
25
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.9
RthJC Junction to Case Thermal Resistance Diode 2
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 110 g
SP3 Package outline (dimensions in mm)
17
12
28
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
APTGF15X120T3G
APTGF15X120T3G – Rev 0 July, 2007
www.microsemi.com 4-6
Typical Performance Curve
Output characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
70
012345678
Ic, Collector Current (A)
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Output Characteristics (VGE=10V)
TJ=25°C
TJ=125°C
0
2
4
6
8
10
12
14
16
0 0.5 1 1.5 2 2.5 3 3.5
Ic, Collector Current (A)
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
70
02.557.51012.515
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
Gate Charge
VCE=240V
VCE=600V
VCE=960V
0
2
4
6
8
10
12
14
16
18
0 20 40 60 80 100 120
Gate Charge (nC)
VGE, Gate to Emitter Voltage (V)
IC = 15A
TJ = 25°C
Ic=30A
Ic=15A
Ic=7.5A
0
1
2
3
4
5
6
7
8
9
9 10111213141516
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
VCE, Collector to Emitter Voltage (V)
TJ = 125°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=30A
Ic=15A
Ic=7.5A
0
1
2
3
4
5
6
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.80
0.85
0.90
0.95
1.00
1.05
1.10
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
Collector to Emitter Breakdown Voltage
(Normalized)
Breakdown Voltage vs Junction Temp.
0
5
10
15
20
25
30
35
40
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Ic, DC Collector Current (A)
DC Collector Current vs Case Temperature
APTGF15X120T3G
APTGF15X120T3G – Rev 0 July, 2007
www.microsemi.com 5-6
VGE = 15V
50
55
60
65
70
75
0 5 10 15 20 25 30 35
ICE, Collector to Emitter Current (A)
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 33Ω
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
0 5 10 15 20 25 30 35
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns
)
VCE = 600V
RG = 33Ω
VGE=15V
0
40
80
120
160
0 5 10 15 20 25 30 35
ICE, Collector to Emitter Current (A)
tr, Rise Time (ns)
Current Rise Time vs Collector Current
VCE = 600V
RG = 33Ω
TJ = 25°C
TJ = 125°C
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35
ICE, Collector to Emitter Current (A)
tf, Fall Time (ns)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 33Ω
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30 35
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
Eon, Turn-On Energy Loss (mJ
)
VCE = 600V
RG = 33Ω
TJ = 25°C
TJ = 125°C
0
0.5
1
1.5
2
2.5
0 5 10 15 20 25 30 35
ICE, Collector to Emitter Current (A)
Eoff, Turn-off Energy Loss (mJ)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 33Ω
Eon, 15A
Eoff, 15A
0
1
2
3
4
5
6
7
8
020406080100120
Gate Resistance (Ohms)
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
0
5
10
15
20
25
30
35
0 400 800 1200
IC, Collector Current (A)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
APTGF15X120T3G
APTGF15X120T3G – Rev 0 July, 2007
www.microsemi.com 6-6
Cies
Cres
Coes
10
100
1000
10000
0 1020304050
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
switching
0
20
40
60
80
100
120
0 5 10 15 20 25
I
C
, Collector Current (A)
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
V
CE
= 600V
D = 50%
R
G
= 33Ω
T
J
= 125°C
T
C
= 75°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
