• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
Rev. V2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MA4E2037, MA4E2039,MA4E2040
GaAs Beam Lead Schottky Diodes
Features
• Low Series Resistance
• Low Capacitance
• High Cut-Off Frequency
• Silicon Nitride Passivation
• Multiple Configurations
Description and Applications
M/A-Com’s MA4E2037 single, MA4E2039 anti-parallel
pair and MA4E2040 series tee are gallium arsenide
beam lead Schottky barrier diodes. These devices are
fabricated on OMCVD epitaxial wafers using a process
designed for high device uniformity and extremely low
parasitics. The high carrier mobility of gallium arsenide
results in lower series resistance than a silicon Schottky
with equivalent capacitance, resulting in lower noise fig-
ure and conversion loss. The diodes are fully passivated
with silicon nitride and have an additional layer of a poly-
mer for scratch protection. The protective coatings pre-
vent damage to the junction and the anode air bridge
during handling.
Applications
The high cut-off frequency of these diodes allows use
through low millimeter wave frequencies. Typical appli-
cations include single and double balanced mixers in
PCN transceivers and radios, automotive radar systems
and police radar detectors.
The MA4E2039 anti-parallel pair is designed for use in
sub harmonically pumped mixers. Close matching of the
diode characteristics in high LO suppression at the RF
input.
MA4E2037
MA4E2039
MA4E2040
Notes : ( Unless otherwise specifie d )
1. Dimensions are in mm (inches).
2. Views are with junction side up.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
2
Rev. V2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MA4E2037, MA4E2039,MA4E2040
GaAs Beam Lead Schottky Diodes
Electrical Specifications @ + 25 °C (Measured as Single Diodes)
Parameters and Test Conditions Symbol Units MA4E2037 MA4E2039
Min. Typ. Max. Min. Typ. Max.
Junction Capacitance at 0V at 1 MHz Cj pF .020 .0203
Total Capacitance at 0V at 1 MHz1 Ct pF .030 .045 .060 .0303 .0453 .0603
Junction Capacitance Difference DCj pF .005 .010
Series Resistance at +10mA2 Rs Ohms 4 7 4 7
Forward Voltage at +1mA Vf1 Volts .60 .70 .80 .60 .70 .80
Forward Voltage Difference at 1mA DVf Volts .005 .010
Reverse Breakdown Voltage at -10uA Vbr Volts 4.5 7
Parameters and Test Conditions Symbol Units MA4E2040
Min. Typ. Max.
Junction Capacitance at 0V at 1 MHz Cj pF .0203
Total Capacitance at 0V at 1 MHz1 Ct pF .0303 .0453 .0603
Junction Capacitance Difference DCj pF .005 .010
Series Resistance at +10mA2 Rs Ohms 4 7
Forward Voltage at +1mA Vf1 Volts .60 .70 .80
Forward Voltage Difference at 1mA DVf Volts .005 .010
Reverse Breakdown Voltage at -10uA Vbr Volts 4.5 7
Notes:
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.
3. Capacitance for the MA4E2039 and MA4E2040 is per Schottk y diode.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
3
Rev. V2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MA4E2037, MA4E2039,MA4E2040
GaAs Beam Lead Schottky Diodes
Forward Current vs Temperature
0.00
0.01
0.10
1.00
10.00
100.00
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
Forward Voltage (V)
Fo rw ard Cu rrent (mA)
Absolute Maximum Ratings 1
Parameter Absolute Maximum
Operating Temperature -65 °C to +125 °C
Storage Temperature -65 °C to +150 °C
Incident LO Power +20 dBm
Incident RF Power +20 dBm .
Mounting Temperature +235°C for 10 seconds
Electrostatic Discharge ( ESD ) Classification 2 Class 0
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Human Body Model
+125°C 25°C
- 50°C
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
4
Rev. V2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MA4E2037, MA4E2039,MA4E2040
GaAs Beam Lead Schottky Diodes
Handling Procedures
The following precautions should be observed to avoid damaging these chips:
Cleanliness: The chips should be handled in a clean environment.
Do not attempt to clean die after installation.
Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static
electricity. Proper ESD techniques should be used when handling these
devices.
General Handling: The protective polymer coating on the active areas of these die provides
scratch protection, particularly for the metal air bridge which contacts the
anode. Beam lead devic es must, however, must be handled with care since
the leads may be easily distorted or broken by the normal pressures
exerted when han dled by tweezers. A vacuum pencil with a # 27 tip is
recommended for picking and placing.
Mounting Techniques
These devices are designed to be inserted onto hard or soft substrates. Recommended methods of attachment
include thermo-compression bonding, parallel- gap welding, solder reflow and conductive epo xy.
See application note M541, “ Bonding and Handling Procedures for Chip Diode Devices “ for detailed instruc-
tions.
