For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Driver & GAin Block - smT
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HMC476SC70 / 476SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
v02.0811
General DescriptionFunctional Diagram
Typical Applications
Electrical Specications, Vs= 5V, Rbias= 56 Ohm, TA = +25° C
Features
The HMC476SC70(E) is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT ampliers
covering DC to 6 GHz. This industry standard SC70
packaged amplier can be used as a cascadable 50
Ohm RF/IF gain stage as well as a LO or PA driver with
up to +12 dBm output power. The HMC476SC70(E)
offers 20 dB of gain with a +24 dBm output IP3 at 850
MHz while requiring only 35 mA from a single positive
supply. The Darlington topology results in reduced
sensitivity to normal process variations and excellent
gain stability over temperature while requiring a
minimal number of external bias components.
P1dB Output Power: +12 dBm
Gain: 20 dB
Output IP3: +24 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +12V
Industry Standard SC70 Package
The HMC476SC70(E) is ideal for:
• Cellular / PCS / 3G
• WiBro / WiMAX / 4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Parameter Min. Typ. Max. Units
Gain
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
16
13
9
19
16
12
dB
dB
dB
Gain Variation Over Temperature DC - 6 GHz 0.008 0.012 dB/ °C
Input Return Loss DC - 4 GHz
4.0 - 6.0 GHz
20
15
dB
dB
Output Return Loss DC - 4 GHz
4.0 - 6.0 GHz
20
13
dB
dB
Reverse Isolation DC - 6 GHz 18 dB
Output Power for 1 dB Compression (P1dB) 0.5 - 4.0 GHz
4.0 - 6.0 GHz
9.0
8.0
12.0
11.0
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 4.0 GHz
4.0 - 6.0 GHz
24
22
dBm
dBm
Noise Figure 0.5 - 4.0 GHz
4.0 - 6.0 GHz
2.5
3.0
dB
dB
Supply Current (Icq) 35 42 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Driver & GAin Block - smT
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Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
HMC476SC70 / 476SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
v02.0811
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
012345678
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0123456
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0123456
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0123456
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
0123456
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
0
2
4
6
8
0123456
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Driver & GAin Block - smT
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Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc = 35 mA @ 850 MHz
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Icc vs. Vcc Over Temperature for
Fixed Vs = 5V, Rbias = 56 Ohms
HMC476SC70 / 476SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
v02.0811
0
3
6
9
12
15
18
0123456
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
3
6
9
12
15
18
0123456
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
10
14
18
22
26
30
0123456
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
5678910
Gain
P1dB
Psat
IP3
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Vs (Vdc)
30
32
34
36
38
40
42
2.7 2.8 2.9 3 3.1 3.2
Icc (mA)
Vcc (V)
+85 C
+25 C
-40 C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Driver & GAin Block - smT
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Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +6V
Collector Bias Current (Icc) 45 mA
RF Input Power (RFIN)(Vcc = +2.4V) +5 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 7.75 mW/°C above 85 °C) 0.504 W
Thermal Resistance
(junction to lead) 129 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Part Number Package Body Material Lead Finish MSL Rating Package Marking
HMC476SC70 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 476
HMC476SC70E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 476E
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC476SC70 / 476SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
v02.0811
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3. LEAD PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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Pin Number Function Description Interface Schematic
1, 2, 4, 5 GND These pins must be connected to RF/DC ground.
3RFIN This pin is DC coupled.
An off chip DC blocking capacitor is required.
6RFOUT RF output and DC Bias (Vcc) for the output stage.
Application Circuit
Pin Descriptions
HMC476SC70 / 476SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
v02.0811
Recommended Component Values for Key Application Frequencies
Component
Frequency (MHz)
50 900 1900 2200 2400 3500 5200 5800
L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 6.8 nH 3.3 nH
C1, C2 0.01 µF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF
Supply Voltage (Vs) 5V 8V 10V 12V
Rbias Value 56 Ω 130 Ω 180 Ω 240 Ω
Rbias Power rating 1/8 W 1/4 W 1/4 W 1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. Rbias provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 35 mA, Rbias= (Vs - Vcc) / Icc
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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Evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads should be connected directly to the ground
plane similar to that shown. A sufficient number
of via holes should be used to connect the top
and bottom ground planes. The evaluation board
should be mounted to an appropriate heat sink. The
evaluation circuit board shown is available from
Hittite upon request.
List of Materials for Evaluation PCB 118038 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 - J4 DC Pin
C1 - C3 100 pF Capacitor, 0402 Pkg.
C4 1000 pF Capacitor, 0603 Pkg.
C5 2.2 µF Capacitor, Tantalum
R1 50 Ohm Resistor, 1210 Pkg.
L1 18 nH Inductor, 0603 Pkg.
U1 HMC476SC70(E)
PCB [2] 117360 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC476SC70 / 476SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
v02.0811