BFT93WTR - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of November 1992

File under Discrete Semiconductors, SC14

March 1994

DISCRETE SEMICONDUCTORS

Philips Semiconductors

BFT93W

PNP 4 GHz wideband transistor

March 1994 2

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

FEATURES

•High power gain

•Gold metallization ensures

excellent reliability

•SOT323 (S-mini) package.

APPLICATIONS

It is intended as a general purpose

transistor for wideband applications

up to 2 GHz.

DESCRIPTION

Silicon PNP transistor in a plastic,

SOT323 (S-mini) package. The

BFT93W uses the same crystal as the

SOT23 version, BFT93.

PINNING

PIN DESCRIPTION

1base

2emitter

3collector

BFT93W Marking code: X1.

Fig.1 SOT323.

handbook, 2 columns

MBC870

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter −−−15 V

VCEO collector-emitter voltage open base −−−12 V

ICcollector current (DC) −−−50 mA

Ptot total power dissipation up to Ts=93°C; note 1 −−300 mW

hFE DC current gain IC=−30 mA; VCE =−5 V 20 50 −

Cre feedback capacitance IC= 0; VCE =−5 V; f = 1 MHz −1−pF

fTtransition frequency IC=−30 mA; VCE =−5V;

f = 500 MHz −4−GHz

GUM maximum unilateral power gain IC=−30 mA; VCE =−5V;

f = 500 MHz; Tamb =25°C−15.5 −dB

F noise ﬁgure IC=−10 mA; VCE =−5V;

f = 500 MHz −2.4 −dB

Tjjunction temperature −−150 °C

March 1994 3

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the “Limiting values” and “Thermal characteristics”

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj=25°C (unless otherwise speciﬁed).

Note

1. GUM is the maximum unilateral power gain, assuming s12 is zero.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −−15 V

VCEO collector-emitter voltage open base −−12 V

VEBO emitter-base voltage open collector −−2V

Ccollector current (DC) −−50 mA

Ptot total power dissipation up to Ts=93°C; note 1 −300 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point up to Ts=93°C; note 1 190 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB =−5V −−−50 nA

hFE DC current gain IC=−30 mA; VCE =−5 V 20 50 −

fTtransition frequency IC=−30 mA; VCE =−5V;

f = 500 MHz; Tamb =25°C−4−GHz

Cccollector capacitance IE=i

e= 0; VCB =−5V;

f = 1 MHz −1.2 −pF

Ceemitter capacitance IC=i

c= 0; VEB =−0.5 V;

f = 1 MHz −1.4 −pF

Cre feedback capacitance IC= 0; VCE =−5V;

f = 1 MHz −1−pF

GUM maximum unilateral power

gain; note 1 IC=−30 mA; VCE =−5V;

f = 500 MHz; Tamb =25°C−15.5 −dB

IC=−30 mA; VCE =−5V;

f = 1 GHz; Tamb =25°C−10 −dB

F noise ﬁgure Γs=Γopt; IC=−10 mA;

VCE =−5 V; f = 500 MHz −2.4 −dB

Γs=Γopt; IC=−10 mA;

VCE =−5 V; f = 1 GHz −3−dB

GUM 10 s21 2

11 2

–()1s

22 2

–()

------------------------------------------------------------ dB.log=

March 1994 4

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Fig.2 Power derating as a function of the soldering

point temperature.

0 50 100 200

200

MLB424

150T ( C)

Ptot

(mW)

300

400

100

Fig.3 DC current gain as a function of collector

current, typical values.

VCE =−5 V; Tj=25°C.

010 20 40

MLB425

30 I (mA)

Fig.4 Feedback capacitance as a function of

collector-base voltage, typical values.

IC= 0; f = 1 MHz.

020

MLB426

48 V (V)

Cre

(pF)

1.6

1.2

0.8

0.4

12 16

Fig.5 Transition frequency as a function of

collector current, typical values.

f = 500 MHz; Tamb =25°C.

MLB427

(GHz)

102

101

I (mA)

V =

10 V

5 V

March 1994 5

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Fig.6 Gain as a function of collector current,

typical values.

VCE =−5 V; f = 500 MHz.

010 20 40

MLB428

gain

(dB)

I (mA)

MSG

Fig.7 Gain as a function of collector current,

typical values.

VCE =−5 V; f = 1 GHz.

010 20 40

MLB429

gain

(dB)

I (mA)

MSG

GUM

Fig.8 Gain as a function of frequency,

typical values.

VCE =−5 V; IC=−10 mA.

010

MLB430

102103104

gain

(dB)

f (MHz)

GUM

MSG

Gmax

Fig.9 Gain as a function of frequency,

typical values.

VCE =−5 V; IC=−30 mA.

010

MLB431

102103104

gain

(dB)

f (MHz)

GUM

MSG

Gmax

March 1994 6

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

VCE =−10 V; IC=−30 mA.

Fig.10 Common emitter input reflection coefficient (s11), typical values.

MLB434

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

0.2 0.5 1 2 5

3 GHz

40 MHz

VCE =−10 V; IC=−30 mA.

Fig.11 Common emitter forward transmission coefficient (s21), typical values.

MLB435

90o

135o

180o

90o

50 40 30 20 10

45o

135o45o

3 GHz

40 MHz

March 1994 7

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

VCE =−10 V; IC=−30 mA.

Fig.12 Common emitter reverse transmission coefficient (s12), typical values.

MLB436

90o

135o

180o

90o

0.5 0.4 0.3 0.2 0.1

45o

135o45o

40 MHz

3 GHz

Fig.13 Common emitter output reflection coefficient (s22), typical values.

VCE =−10 V; IC=−30 mA.

MLB437

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

0.2 0.5 1 2 5

3 GHz 40 MHz

March 1994 8

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Fig.14 Minimum noise figure as a function of

collector current, typical values.

VCE =−5V.

010

MLB432

101

(dB)

I (mA)

1 GHz

500 MHz

Fig.15 Minimum noise figure as a function of

frequency, typical values.

VCE =−5V.

MLB433

(dB)

f (MHz) 104

103

102

I =

30 mA

20 mA

10 mA

5 mA

March 1994 9

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Fig.16 Common emitter noise figure circles, typical values.

VCE =−5 V; IC=−10 mA; f = 500 MHz; Zo=50Ω.

MLB438

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

1 2 5

opt

min

F = 2.40 dB

F = 3 dB

F = 4 dB

F = 5 dB

0.2 0.5

Fig.17 Common emitter noise figure circles, typical values.

VCE =−5 V; IC=−10 mA; f = 1 GHz; Zo=50Ω.

MLB439

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

1 2 50.5

F = 3.5 dB

F = 4 dB

F = 5 dB

min

F = 2.90 dB

opt

0.2

March 1994 10

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

SPICE parameters for the BFT93W crystal

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 835.1 aA

2 BF 48.56 −

3 NF 1.000 −

4 VAF 19.01 V

5 IKF 146.8 mA

6 ISE 90.94 fA

7 NE 1.749 −

8 BR 12.18 −

9 NR 997.6 m

10 VAR 3.374 V

11 IKR 6.742 mA

12 ISC 23.42 fA

13 NC 1.449 −

14 RB 10.00 Ω

15 IRB 1.000 µA

16 RBM 10.00 Ω

17 RE 200.0 mΩ

18 RC 3.800 Ω

19(1) XTB 0.000 −

20(1) EG 1.110 EV

21(1) XTI 3.000 −

22 CJE 1.570 pF

23 VJE 600.0 mV

24 MJE 382.2 m

25 TF 14.85 ps

26 XTF 2.209 −

27 VTF 2.989 V

28 ITF 14.37 mA

29 PTF 0.000 deg

30 CJC 1.995 pF

31 VJC 584.4 mV

32 MJC 281.3 m

33 XCJC 120.0 m

34 TR 3.000 ns

35(1) CJS 0.000 F

Note

1. These parameters have not been extracted, the

default values are shown.

List of components (see Fig.18).

36(1) VJS 750.0 mV

37(1) MJS 0.000 −

38 FC 811.6 m

DESIGNATION VALUE UNIT

Cbe 2fF

cb 100 fF

Cce 100 fF

L1 0.34 nH

L2 0.10 nH

L3 0.34 nH

LB0.60 nH

LE0.60 nH

SEQUENCE No. PARAMETER VALUE UNIT

QLB= 50; QLE= 50; QLB,E(f)=QL

B,E√(f/Fc);

Fc = scaling frequency = 1 GHz.

Fig.18 Package equivalent circuit SOT323.

handbook, halfpage

MBC964

CB' C'

L1 L2

Ccb

Cbe ce

March 1994 11

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 1 Common emitter scattering parameters: VCE =−5 V; IC=−5 mA.

Table 2 Noise data: VCE =−5 V; IC=−5 mA.

(MHz)

s11 s21 s12 s22 GUM

(dB)

MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg)

40 0.759 −20.5 11.294 165.0 0.023 78.5 0.945 −12.3 34.5

100 0.711 −49.0 10.079 147.7 0.050 64.5 0.834 −27.8 28.3

200 0.630 −88.0 8.082 126.7 0.076 51.2 0.631 −44.0 22.5

300 0.586 −113.6 6.355 113.1 0.090 45.1 0.491 −52.8 19.1

400 0.566 −130.5 5.116 104.1 0.099 42.9 0.403 −58.5 16.6

500 0.557 −141.8 4.266 97.5 0.107 42.8 0.349 −62.5 14.8

600 0.551 −150.5 3.653 92.2 0.113 43.7 0.316 −65.2 13.3

700 0.546 −157.1 3.193 87.7 0.120 44.9 0.293 −66.8 12.0

800 0.543 −162.7 2.838 83.9 0.127 46.2 0.277 −67.7 10.9

900 0.541 −167.6 2.551 80.4 0.133 47.6 0.263 −68.1 9.9

1000 0.541 −172.0 2.323 77.4 0.140 49.1 0.249 −68.7 9.1

1200 0.549 −179.4 1.975 71.7 0.153 51.6 0.223 −71.8 7.7

1400 0.559 174.8 1.737 66.4 0.168 53.8 0.212 −78.3 6.6

1600 0.565 170.3 1.555 61.7 0.183 55.2 0.215 −84.5 5.7

1800 0.566 165.6 1.420 57.7 0.197 56.8 0.220 −87.5 4.9

2000 0.575 160.5 1.310 54.2 0.213 58.3 0.215 −91.0 4.3

2200 0.594 156.3 1.217 51.1 0.228 59.7 0.208 −98.1 3.8

2400 0.613 153.7 1.135 47.7 0.242 60.6 0.217 −107.7 3.4

2600 0.623 151.4 1.064 44.8 0.255 60.9 0.242 −114.1 2.9

2800 0.618 148.2 1.019 41.7 0.271 61.5 0.264 −116.9 2.6

3000 0.621 144.5 0.975 39.3 0.289 61.9 0.275 −119.3 2.2

(MHz) Fmin

(dB) Γopt Rn

(ratio) (deg)

500 1.80 0.307 86.5 0.320

1000 2.55 0.358 121.0 0.280

March 1994 12

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 3 Common emitter scattering parameters: VCE =−5 V; IC=−10 mA.

Table 4 Noise data: VCE =−5 V; IC=−10 mA.

(MHz)

s11 s21 s12 s22 GUM

(dB)

MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg)

40 0.608 −31.5 18.195 160.2 0.020 75.6 0.900 −18.0 34.4

100 0.571 −72.1 15.044 138.8 0.041 60.6 0.725 −38.4 28.5

200 0.538 −114.5 10.475 117.4 0.059 51.1 0.490 −56.6 23.1

300 0.531 −136.1 7.676 106.0 0.070 49.3 0.360 −66.3 19.7

400 0.531 −149.0 5.989 98.6 0.079 50.2 0.287 −73.0 17.4

500 0.532 −157.3 4.907 93.2 0.088 51.8 0.245 −77.9 15.5

600 0.534 −163.6 4.161 88.9 0.097 53.8 0.221 −81.4 14.1

700 0.533 −168.6 3.613 85.1 0.106 55.4 0.204 −83.2 12.8

800 0.532 −172.9 3.195 81.8 0.116 56.9 0.192 −84.2 11.7

900 0.534 −176.8 2.866 78.8 0.125 58.1 0.179 −84.5 10.7

1000 0.535 179.7 2.603 76.2 0.135 59.3 0.167 −85.3 9.9

1200 0.545 173.7 2.206 71.2 0.153 61.0 0.145 −90.1 8.5

1400 0.557 169.2 1.931 66.6 0.172 62.0 0.140 −98.7 7.4

1600 0.561 165.5 1.724 62.2 0.191 62.3 0.149 −104.6 6.5

1800 0.563 161.2 1.570 58.5 0.208 62.7 0.154 −106.3 5.7

2000 0.574 156.6 1.447 55.2 0.227 63.2 0.150 −109.4 5.0

2200 0.593 153.0 1.343 52.4 0.244 63.7 0.148 −117.9 4.5

2400 0.612 150.6 1.251 49.2 0.260 64.0 0.165 −127.5 4.1

2600 0.620 148.8 1.171 46.3 0.274 63.5 0.192 −131.8 3.6

2800 0.616 146.0 1.122 43.2 0.290 63.3 0.213 −132.1 3.3

3000 0.618 142.3 1.074 40.7 0.309 63.2 0.223 −133.3 2.9

(MHz) Fmin

(dB) Γopt Rn

(ratio) (deg)

500 2.40 0.304 94.7 0.430

1000 2.90 0.321 136.9 0.270

March 1994 13

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 5 Common emitter scattering parameters: VCE =−5 V; IC=−20 mA.

Table 6 Noise data: VCE =−5 V; IC=−20 mA.

(MHz)

s11 s21 s12 s22 GUM

(dB)

MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg)

40 0.450 −49.1 25.274 154.6 0.018 72.5 0.830 −24.1 34.1

100 0.475 −99.1 18.682 130.2 0.034 59.2 0.608 −47.9 28.5

200 0.502 −135.9 11.661 110.7 0.047 54.5 0.379 −67.2 23.3

300 0.516 −151.8 8.244 101.0 0.058 55.6 0.270 −77.9 20.0

400 0.526 −161.1 6.342 94.7 0.068 58.1 0.215 −86.1 17.7

500 0.530 −167.1 5.156 90.2 0.079 60.1 0.185 −92.5 15.8

600 0.534 −171.9 4.350 86.3 0.089 61.9 0.169 −96.7 14.4

700 0.535 −175.7 3.768 83.0 0.101 63.2 0.157 −98.7 13.1

800 0.536 −179.1 3.326 80.1 0.112 64.0 0.147 −99.8 12.0

900 0.538 177.7 2.980 77.3 0.123 64.8 0.137 −100.5 11.1

1000 0.541 174.9 2.703 74.9 0.134 65.4 0.127 −101.9 10.2

1200 0.554 169.8 2.285 70.3 0.154 66.2 0.111 −109.1 8.8

1400 0.566 166.1 1.995 65.9 0.175 66.6 0.112 −118.8 7.7

1600 0.571 162.6 1.777 61.7 0.195 66.0 0.125 −122.9 6.8

1800 0.573 158.8 1.616 58.2 0.214 66.0 0.130 −123.1 6.0

2000 0.585 154.4 1.488 55.0 0.234 66.1 0.127 −126.2 5.3

2200 0.604 151.0 1.380 52.4 0.252 66.2 0.130 −135.1 4.8

2400 0.624 148.8 1.285 49.4 0.268 66.2 0.152 −143.0 4.4

2600 0.633 147.1 1.200 46.6 0.282 65.5 0.180 −144.7 3.9

2800 0.626 144.3 1.148 43.5 0.299 65.0 0.199 −143.3 3.5

3000 0.629 140.8 1.100 41.0 0.319 64.7 0.208 −143.7 3.2

(MHz) Fmin

(dB) Γopt Rn

(ratio) (deg)

500 2.80 0.301 100.8 0.610

1000 3.60 0.356 152.2 0.280

March 1994 14

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 7 Common emitter scattering parameters: VCE =−5 V; IC=−30 mA.

Table 8 Noise data: VCE =−5 V; IC=−30 mA.

(MHz)

s11 s21 s12 s22 GUM

(dB)

MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg)

40 0.382 −62.3 28.063 151.4 0.016 71.2 0.781 −27.1 33.7

100 0.453 −113.1 19.479 126.1 0.030 58.8 0.543 −51.8 28.3

200 0.502 −144.8 11.682 107.7 0.043 56.8 0.327 −70.7 23.1

300 0.521 −158.0 8.162 98.8 0.054 58.9 0.232 −81.5 19.8

400 0.532 −165.8 6.248 92.9 0.065 61.4 0.185 −89.9 17.5

500 0.537 −170.8 5.069 88.6 0.076 63.4 0.161 −96.5 15.7

600 0.542 −174.9 4.269 84.9 0.088 65.0 0.148 −100.5 14.2

700 0.543 −178.2 3.692 81.7 0.099 65.8 0.139 −102.3 13.0

800 0.545 178.7 3.258 78.8 0.111 66.4 0.131 −103.2 11.9

900 0.548 176.0 2.917 76.1 0.122 67.0 0.123 −103.6 10.9

1000 0.552 173.2 2.644 73.8 0.133 67.4 0.114 −104.8 10.1

1200 0.565 168.6 2.233 69.2 0.154 68.0 0.101 −112.5 8.7

1400 0.577 165.0 1.948 64.9 0.175 68.2 0.105 −121.9 7.6

1600 0.584 161.7 1.734 60.8 0.195 67.5 0.119 −125.4 6.7

1800 0.586 157.9 1.577 57.3 0.214 67.3 0.125 −125.0 5.8

2000 0.598 153.6 1.451 54.2 0.234 67.3 0.124 −128.3 5.2

2200 0.620 150.3 1.345 51.5 0.252 67.5 0.129 −137.0 4.8

2400 0.639 148.1 1.251 48.7 0.269 67.5 0.152 −144.6 4.3

2600 0.646 146.3 1.169 46.0 0.284 66.6 0.181 −146.1 3.8

2800 0.642 143.4 1.118 43.0 0.300 66.2 0.200 −144.7 3.4

3000 0.644 139.8 1.071 40.5 0.321 65.7 0.210 −145.0 3.1

(MHz) Fmin

(dB) Γopt Rn

(ratio) (deg)

500 3.40 0.308 104.2 0.830

1000 4.20 0.380 164.0 0.310

March 1994 15

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 9 Common emitter scattering parameters: VCE =−10 V; IC=−5 mA.

Table 10 Noise data: VCE =−10 V; IC=−5 mA.

(MHz)

s11 s21 s12 s22 GUM

(dB)

MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg)

40 0.837 −16.8 11.098 166.4 0.020 80.4 0.947 −10.2 36.0

100 0.781 −40.2 10.061 150.4 0.046 67.6 0.856 −23.6 29.9

200 0.670 −73.9 8.331 130.4 0.073 54.7 0.674 −38.2 23.6

300 0.592 −98.6 6.727 116.7 0.088 48.3 0.537 −46.3 19.9

400 0.547 −116.1 5.490 107.3 0.098 45.8 0.447 −51.2 17.3

500 0.523 −128.7 4.616 100.5 0.106 45.2 0.389 −54.5 15.4

600 0.507 −138.6 3.971 94.9 0.114 45.6 0.352 −56.5 13.8

700 0.495 −146.1 3.476 90.3 0.121 46.4 0.327 −57.6 12.5

800 0.487 −152.5 3.094 86.3 0.129 47.3 0.309 −58.0 11.4

900 0.481 −158.1 2.782 82.6 0.136 48.2 0.294 −57.8 10.4

1000 0.478 −163.1 2.532 79.5 0.143 49.3 0.279 −57.8 9.5

1200 0.483 −171.8 2.155 73.7 0.156 51.0 0.250 −59.2 8.1

1400 0.493 −178.2 1.895 68.4 0.171 52.4 0.234 −63.8 7.0

1600 0.499 176.9 1.694 63.6 0.185 53.2 0.232 −69.2 6.1

1800 0.501 172.0 1.541 59.6 0.198 54.4 0.233 −71.8 5.3

2000 0.509 166.5 1.418 55.9 0.212 55.5 0.227 −74.1 4.6

2200 0.529 161.8 1.317 52.6 0.224 56.5 0.215 −79.5 4.0

2400 0.550 158.8 1.228 49.0 0.236 57.2 0.215 −88.7 3.6

2600 0.564 156.7 1.148 45.9 0.246 57.5 0.232 −96.4 3.1

2800 0.564 153.7 1.100 42.8 0.259 58.2 0.253 −100.1 2.8

3000 0.569 150.0 1.051 40.2 0.274 58.9 0.262 −102.7 2.4

(MHz) Fmin

(dB) Γopt Rn

(ratio) (deg)

500 2.00 0.340 73.0 0.440

1000 2.50 0.380 105.0 0.360

March 1994 16

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 11 Common emitter scattering parameters: VCE =−10 V; IC=−10 mA.

Table 12 Noise data: VCE =−10 V; IC=−10 mA.

(MHz)

s11 s21 s12 s22 GUM

(dB)

MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg)

40 0.744 −24.2 18.034 162.0 0.019 77.2 0.902 −15.2 35.9

100 0.666 −56.4 15.339 142.3 0.040 63.6 0.757 −33.0 30.0

200 0.556 −95.4 11.171 121.0 0.059 53.5 0.533 −49.6 24.0

300 0.507 −119.1 8.353 109.0 0.071 50.8 0.398 −57.9 20.5

400 0.485 −134.4 6.576 101.2 0.081 51.0 0.319 −63.2 18.0

500 0.474 −144.5 5.412 95.6 0.090 52.2 0.272 −66.9 16.1

600 0.469 −152.4 4.597 91.1 0.099 53.7 0.243 −69.2 14.6

700 0.465 −158.4 3.997 87.2 0.108 54.9 0.224 −70.3 13.3

800 0.461 −163.5 3.537 83.9 0.118 56.1 0.209 −70.3 12.2

900 0.459 −168.1 3.170 80.8 0.128 57.0 0.196 −69.7 11.2

1000 0.460 −172.3 2.875 78.2 0.137 57.8 0.183 −69.3 10.4

1200 0.469 −179.3 2.435 73.1 0.155 59.1 0.157 −71.0 8.9

1400 0.482 175.4 2.130 68.4 0.173 59.8 0.144 −77.4 7.8

1600 0.488 171.5 1.898 64.1 0.191 59.7 0.147 −83.7 6.8

1800 0.489 167.2 1.723 60.4 0.207 59.9 0.150 −85.2 6.0

2000 0.501 162.2 1.584 57.0 0.224 60.3 0.144 −87.1 5.3

2200 0.522 158.0 1.469 54.0 0.239 60.6 0.134 −94.3 4.8

2400 0.543 155.4 1.367 50.7 0.253 60.7 0.140 −106.3 4.3

2600 0.557 153.8 1.278 47.8 0.264 60.3 0.162 −113.7 3.9

2800 0.556 151.0 1.222 44.7 0.278 60.4 0.183 −115.3 3.5

3000 0.560 147.6 1.168 42.1 0.295 60.4 0.192 −116.6 3.1

(MHz) Fmin

(dB) Γopt Rn

(ratio) (deg)

500 2.40 0.270 83.0 0.400

1000 2.90 0.350 115.0 0.350

March 1994 17

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 13 Common emitter scattering parameters: VCE =−10 V; IC=−20 mA.

Table 14 Noise data: VCE =−10 V; IC=−20 mA.

(MHz)

s11 s21 s12 s22 GUM

(dB)

MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg)

40 0.655 −33.6 25.207 156.9 0.018 74.2 0.840 −20.3 35.8

100 0.568 −73.8 19.459 133.9 0.035 61.0 0.644 −41.3 29.8

200 0.487 −113.4 12.634 113.7 0.050 54.9 0.416 −58.0 24.0

300 0.463 −134.1 9.050 103.5 0.061 55.1 0.299 −66.3 20.6

400 0.456 −146.7 6.997 96.9 0.072 56.9 0.236 −72.0 18.2

500 0.453 −154.7 5.702 92.1 0.082 58.5 0.200 −76.3 16.3

600 0.453 −161.0 4.818 88.2 0.093 60.0 0.179 −79.0 14.8

700 0.451 −165.7 4.171 84.8 0.104 61.0 0.165 −79.9 13.5

800 0.451 −169.9 3.683 81.8 0.115 61.8 0.155 −79.9 12.4

900 0.452 −173.7 3.297 79.0 0.126 62.4 0.143 −79.0 11.4

1000 0.454 −177.3 2.986 76.6 0.137 62.9 0.132 −78.5 10.6

1200 0.467 176.6 2.521 71.9 0.157 63.4 0.110 −81.6 9.2

1400 0.482 172.4 2.200 67.6 0.176 63.4 0.103 −90.5 8.0

1600 0.490 168.8 1.956 63.6 0.195 62.8 0.110 −97.4 7.1

1800 0.493 164.8 1.774 60.1 0.212 62.7 0.114 −98.0 6.2

2000 0.505 159.8 1.630 56.8 0.230 62.7 0.109 −100.1 5.6

2200 0.528 155.9 1.509 54.1 0.245 62.8 0.103 −109.7 5.0

2400 0.550 153.6 1.405 51.0 0.260 62.7 0.115 −122.8 4.6

2600 0.563 151.9 1.312 48.1 0.273 62.2 0.141 −128.2 4.1

2800 0.562 149.2 1.253 45.2 0.287 62.0 0.160 −127.8 3.7

3000 0.565 145.8 1.199 42.6 0.305 61.7 0.169 −128.3 3.4

(MHz) Fmin

(dB) Γopt Rn

(ratio) (deg)

500 3.00 0.240 98.0 0.440

1000 3.60 0.320 131.0 0.400

March 1994 18

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 15 Common emitter scattering parameters: VCE =−10 V; IC=−30 mA.

Table 16 Noise data: VCE =−10 V; IC=−30 mA.

(MHz)

s11 s21 s12 s22 GUM

(dB)

MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg)

40 0.617 −39.1 28.045 153.9 0.017 73.1 0.797 −22.6 35.4

100 0.529 −82.4 20.389 129.6 0.032 60.3 0.583 −44.1 29.4

200 0.464 −120.8 12.630 110.4 0.047 56.4 0.364 −59.3 23.7

300 0.449 −139.7 8.920 101.0 0.058 57.3 0.259 −66.3 20.3

400 0.446 −151.0 6.853 94.8 0.069 59.4 0.204 −71.2 17.9

500 0.446 −158.1 5.569 90.3 0.081 60.9 0.174 −75.0 16.0

600 0.448 −163.5 4.694 86.5 0.092 62.2 0.158 −77.2 14.5

700 0.449 −167.8 4.060 83.3 0.103 63.0 0.147 −77.7 13.2

800 0.450 −171.7 3.579 80.4 0.115 63.6 0.139 −77.1 12.1

900 0.452 −175.1 3.204 77.7 0.126 63.8 0.131 −75.9 11.2

1000 0.456 −178.5 2.902 75.4 0.136 64.1 0.122 −75.0 10.3

1200 0.472 175.9 2.448 70.8 0.157 64.3 0.103 −77.7 8.9

1400 0.488 171.7 2.134 66.6 0.176 64.2 0.097 −87.1 7.8

1600 0.498 168.1 1.898 62.5 0.194 63.6 0.106 −94.6 6.9

1800 0.502 164.0 1.721 59.1 0.211 63.4 0.112 −95.7 6.0

2000 0.516 159.3 1.580 56.0 0.229 63.5 0.108 −98.0 5.4

2200 0.539 155.4 1.464 53.2 0.245 63.7 0.103 −108.1 4.8

2400 0.562 152.9 1.362 50.2 0.260 63.6 0.116 −121.5 4.4

2600 0.575 151.2 1.273 47.4 0.272 63.0 0.141 −127.4 3.9

2800 0.573 148.4 1.217 44.5 0.287 62.9 0.162 −127.3 3.5

3000 0.576 144.7 1.164 42.0 0.305 62.6 0.172 −128.1 3.2

(MHz) Fmin

(dB) Γopt Rn

(ratio) (deg)

500 3.60 0.250 101.0 0.550

1000 4.20 0.310 143.0 0.480

March 1994 19

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

PACKAGE OUTLINE

UNIT A1

max bpcD Ee

pQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10 2.2

1.8 1.35

1.15 0.65

1.3 2.2

2.0 0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 3 leads SOT323

97-02-28

March 1994 20

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

March 1994 21

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

NOTES

March 1994 22

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

NOTES

March 1994 23

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

NOTES

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