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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS8984 N-Channel PowerTrench(R) MOSFET tm 30V, 7A, 23m General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Max rDS(on) = 23m, VGS = 10V, ID = 7A Max rDS(on) = 30m, VGS = 4.5V, ID = 6A Low gate charge 100% RG tested RoHS Compliant DD2 DD2 D1 D 5 DD1 4 Q2 6 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S 3 2 7 Q1 8 S 1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current Continuous ID Ratings 30 Units V 20 V (Note 1a) Pulsed EAS PD TJ, TSTG Single Pulse Avalache Energy (Note 2) 7 A 30 A 32 mJ Power Dissipation for Single Operation 1.6 W Derate above 25C 13 mW/C -55 to 150 C (Note 1a) 78 C/W (Note 1) 40 C/W Operating and Storage Temperature Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking FDS8984 Device FDS8984 (c)2007 Fairchild Semiconductor Corporation FDS8984 Rev. A1 Package SO-8 Reel Size 330mm 1 Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET May 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250A, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V IGSS Gate to Source Leakage Current VGS = 20V,VDS = 0V 30 V 23 mV/C 1 TJ = 125C 250 A 100 nA 2.5 V On Characteristics (Note 3) VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250A, referenced to 25C VGS = 10V, ID = 7A 19 23 Drain to Source On Resistance VGS = 4.5V, ID = 6A 24 30 VGS = 10V, ID = 7A, TJ = 125C 26 32 rDS(on) 1.2 1.7 - 4.3 mV/C m Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15V, VGS = 0V, f = 1.0MHz 475 635 pF 100 135 pF 65 100 pF f = 1MHz 0.9 1.6 Switching Characteristics (Note 3) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = 15V, ID = 7A VGS = 10V, RGS = 33 VDS = 15V, VGS = 10V, ID = 7A VDS = 15V, VGS = 5V, ID = 7A 5 10 ns 9 18 ns 42 68 ns 21 34 ns 9.2 13 nC 5.0 7 nC 1.5 nC 2.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ISD = 7A 0.9 1.25 V ISD = 2.1A 0.8 1.0 V IF = 7A, di/dt = 100A/s 33 ns 20 nC Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125C/W when mounted on a 0.02 in2 pad of oz copper c) 135C/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Starting TJ = 25C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V. 3: Pulse Test:Pulse Width <300s, Duty Cycle <2%. 2 FDS8984 Rev. A1 www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted RDS(ON), NORMALIZED ID, DRAIN CURRENT (A) VGS=10V PULSE DURATION =80S DUTY CYCLE =0.5% MAX VGS=5.0V VGS=3.5V 20 VGS=4.5V VGS=4.0V 10 VGS=3.0V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Figure 1. On Region Characteristics RDS(on), DRAIN TO SOURCE ON-RESISTANCE (mOHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 7A VGS = 10V 1.2 1.0 0.8 -40 0 40 80 120 PULSE DURATION =80S DUTY CYCLE =0.5% MAX 2.5 VGS=3.0V 2.0 VGS=3.5V VGS=4.0V 1.5 1.0 VGS=5.0V 0.5 5 160 Figure 3. On Resistance vs Temperature IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) O TJ = 150 C 15 O TJ = 25 C 10 5 0 O TJ = - 55 C 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4 25 30 50 45 40 TJ = 125oC 35 30 25 20 15 TJ = 25oC 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 10 1 VGS = 0V TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDS8984 Rev. A1 20 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID = 7A 55 30 VDD = 5V 20 15 Figure 4. On-Resistance vs Gate to Source Votlage PULSE DURATION =80S DUTY CYCLE =0.5% MAX 25 10 VGS=10V 60 TJ, JUNCTION TEMPERATURE (oC) 30 VGS=4.5V Figure 2. On-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -80 3.0 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 DRAIN-SOURCE ON-RESISTANCE 30 = 25C unless otherwise noted www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 700 VGS, GATE TO SOURCE VOLTAGE(V) 10 600 CISS VDD = 15V VDD = 10V 6 4 CAPACITANCE (pF) 8 VDD = 20V 2 500 f = 1MHz VGS = 0V 400 COSS 300 200 100 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 CRSS 0.1 Figure 7. Gate Charge Characteristics 10 30 Figure 8. Capacitance vs Drain to Source Voltage 8 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 20 10 O STARTING TJ = 25 C O STARTING TJ = 125 C 1 0.01 0.1 7 6 VGS=10V 5 4 VGS=4.5V 3 2 1 1 10 0 25 20 P(PK), PEAK TRANSIENT POWER (W) 10us 0.1 0.01 0.1 100us 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 10ms 100ms 1s SINGLE PULSE TJ = MAX RATED TA = 25oC DC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 11. Forward Bias Safe Operating Area 125 150 3000 TA = 25oC 1000 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 150 - T A -----------------------125 I = I25 VGS=10V 10 SINGLE PULSE 1 -5 10 -4 10 -3 10 -2 -1 0 1 10 10 10 10 t, PULSE WIDTH (s) 2 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation 4 FDS8984 Rev. A1 100 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 100 1 75 TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 10 50 o tAV, TIME IN AVALANCHE (mS) ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ Normalized Thermal Impedance ZJA 2 1 0.1 = 25C unless otherwise noted DUTY CYCLE - DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 1E-3 1E-4 -5 10 t2 SINGLE PULSE -4 10 -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -2 -1 10 10 0 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION(s) Figure 13. Transient Thermal Response Curve 5 FDS8984 Rev. A1 www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the worldTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM Motion-SPMTM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM PDP-SPMTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I27 FDS8984 Rev. A1 6 www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET tm ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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