12.5 W GaN Wideband Transistor
DC - 3.5 GHz
Preliminary - Rev. V4P
NPT2018
1
Preliminary Information
PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit: https://www.macom.com/support
DC-0006414
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Ordering Information1
Part Number Package
NPT2018-000PPR Bulk
NPT2018-SMBPPR Sample Board
Features
GaN on Si HEMT D-Mode Transistor
Suitable for Linear and Saturated Applications
Tunable From DC - 3.5 GHz
48 V Operation
16 dB Gain @ 2.5 GHz
56 % Drain Efficiency @ 2.5 GHz
100 % RF Tested
Lead-Free 3x6 mm 14-Lead PDFN Package
RoHS* Compliant and 260°C Reflow Compatible
Description
The NPT2018 GaN HEMT is a wideband transistor
optimized for DC - 3.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 12.5 W (41 dBm) in an
industry standard surface mount plastic package.
The NPT2018 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Pin Configuration
Functional Schematic
1-2, 6-9, 13-14 NC No Connection
3-5 RFIN / VG RF Input / Gate
10-12 RFOUT / VD RF Output / Drain
15 Paddle2 Ground / Source
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also provide
a low thermal resistance heat path.
7
6
5
4
3
2
1
8
9
10
11
12
13
14
15
NC
NC
RFIN / VG
RFIN / VG
RFIN / VG
NC
NC
NC
NC
RFOUT / VD
RFOUT / VD
RFOUT / VD
NC
NC
1. Reference Application Note M513 for reel size information.
12.5 W GaN Wideband Transistor
DC - 3.5 GHz
Preliminary - Rev. V4P
NPT2018
2
Preliminary Information
PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit: https://www.macom.com/support
DC-0006414
RF Electrical Specifications: TA = 25°C, VDS = 48 V, IDQ = 75 mA
Parameter Test Conditions Symbol Min. Typ. Max. Units
Small Signal Gain CW, 2.5 GHz GSS - 18 - dB
Saturated Output Power CW, 2.5 GHz PSAT - 41.2 - dBm
Drain Efficiency at Saturation CW, 2.5 GHz SAT - 56 - %
Power Gain 2.5 GHz, POUT = 12.5 W GP - 16 - dB
Drain Efficiency 2.5 GHz, POUT = 12.5 W - 53 - %
Ruggedness: Output Mismatch All phase angles VSWR = 10:1, No Device Damage
DC Electrical Characteristics: TA = 25C
Parameter Test Conditions Symbol Min. Typ. Max. Units
Drain-Source Leakage Current VGS = -8 V, VDS = 160 V IDLK - - 3.2 mA
Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 1.6 mA
Gate Threshold Voltage VDS = 48 V, ID = 3 mA VT -2.5 -1.5 -0.5 V
Gate Quiescent Voltage VDS = 48 V, ID = 75 mA VGSQ -2.1 -1.2 -0.3 V
On Resistance VDS = 2 V, ID = 22 mA RON - 1.6 -
Maximum Drain Current VDS = 7 V pulsed, pulse width 300 µs ID,MAX - 1.75 - A
3. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink.
4. The thermal resistance of the mounting configuration must be added to the device RJC , for proper Tj calculation during operation. The
recommended via pattern, shown on page 5, on a 20 mil thick, 1oz plated copper, PCB adds an additional 3.4 °C/W to the typical value.
Parameter Test Conditions Symbol Typ. Units Max. Min.
Thermal Resistance VDS = 48 V, TJ = 200°C RJC 6.5 °C/W - -
Thermal Characteristics3,4
12.5 W GaN Wideband Transistor
DC - 3.5 GHz
Preliminary - Rev. V4P
NPT2018
3
Preliminary Information
PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit: https://www.macom.com/support
DC-0006414
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. MACOM does not recommend sustained operation near these
survivability limits.
7. Operating at nominal conditions with TJ ≤ 200°C will ensure
MTTF > 1 x 106 hours.
Parameter Absolute Maximum
Drain Source Voltage, VDS 160 V
Gate Source Voltage, VGS -10 to 3 V
Gate Current, IG 6 mA
Junction Temperature, TJ +200°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1A
devices.
Bias Sequencing
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (48 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Absolute Maximum Ratings5,6,7
12.5 W GaN Wideband Transistor
DC - 3.5 GHz
Preliminary - Rev. V4P
NPT2018
4
Preliminary Information
PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit: https://www.macom.com/support
DC-0006414
Frequency
(MHz) ZS
(Ω)
ZL
(Ω)
PSAT
(W)
GSS
(dB)
Drain Efficiency
at PSAT (%)
900 5.7 + j16.4 27 + j46.2 14.5 29.0 62
1800 5.4 + j6.3 18.6 + j36.2 14.2 22.0 59
2500 5.2 + j4 11.8 + j27.1 14.0 19.0 57
3500 5.3 + j2.1 7.9 + j17.5 13.0 16.5 55
Load-Pull Performance: VDS = 48 V, IDQ = 75 mA, TC = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Gain vs. Output Power Drain Efficiency vs. Output Power
Impedance Reference ZS and ZL vs. Frequency
ZSZL
10
15
20
25
30
35
20 25 30 35 40 45
900 MHz
1800 MHz
2500 MHz
3500 MHz
Gain (dB)
Output Power (dBm)
0
10
20
30
40
50
60
70
20 25 30 35 40 45
900 MHz
1800 MHz
2500 MHz
3500 MHz
Drain Efficiency (%)
Output Power (dBm)
12.5 W GaN Wideband Transistor
DC - 3.5 GHz
Preliminary - Rev. V4P
NPT2018
5
Preliminary Information
PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit: https://www.macom.com/support
DC-0006414
2.5 GHz Sample Board
Parts List
Parts are tested in a narrowband 2.5 GHz
sample board (20-mil thick RO4350). Electrical and
thermal grounding is provided using a
standard-plated densely packed via hole array
(see recommended via pattern).
Matching is provided using a combination of lumped
elements and transmission lines as shown in the
layout to the left. Recommended tuning
solution component placement, transmission lines,
and details are shown below.
Ref.
Designator Value Tolerance Manufacturer Mfg. Part Number
L1 10 nH 2% Coilcraft 0603HP-10NXGLU
C1 1 uF 10% Murata GRM188R61H105KAALD
C2 10 pF 2% Passive Plus 0603N100GW251
C3 18 pF 2% Passive Plus 0603N180GW251
C4 10 nF 10% Murata GCM188R72A103KA37D
C5 Not Used
C6 0.6 pF ±0.05 pF Passive Plus 0603N0R6AW251
C7 1.8 pF ±0.1 pF Passive Plus 0603N1R8BW251
C8 2.4 pF ±0.1 pF Passive Plus 0603N2R4BW251
C9 4.7 pF ±0.1 pF Passive Plus 0603N4R7BW251
C10 10 pF 2% Passive Plus 0603N100GW251
C11 2.7 pF ±0.1 pF Passive Plus 0603N2R7BW251
C12 0.2 pF ±0.1 pF Passive Plus 0603N0R2BW251
C13 0.6 pF ±0.05 pF Passive Plus 0603N0R6AW251
R1 300 Ω 5% Panasonic ERJ-3GEYJ301V
R2 100 Ω 5% Panasonic ERJ-3GEYJ101V
R3 43 Ω 5% Panasonic ERJ-3GEYJ430V
12.5 W GaN Wideband Transistor
DC - 3.5 GHz
Preliminary - Rev. V4P
NPT2018
6
Preliminary Information
PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit: https://www.macom.com/support
DC-0006414
Typical Performance as Measured in the 2.5 GHz Sample Board:
CW, VDS = 48 V, IDQ = 75 mA (Unless Noted)
Gain vs. Output Power Over Temperature Drain Efficiency vs. Output Power Over Temperature
Quiescent VGS vs. Temperature
13
14
15
16
17
18
19
15 20 25 30 35 40 45
+25°C
-40°C
+85°C
Gain (dB)
Output Power (dBm)
0
10
20
30
40
50
60
15 20 25 30 35 40 45
+25°C
-40°C
+85°C
Drain Efficiency (%)
Output Power (dBm)
-1.6
-1.5
-1.4
-1.3
-1.2
-1.1
-1.0
-50 -25 0 25 50 75 100
38 mA
75 mA
110 mA
VGSQ (V)
Temperature (°C)
12.5 W GaN Wideband Transistor
DC - 3.5 GHz
Preliminary - Rev. V4P
NPT2018
7
Preliminary Information
PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit: https://www.macom.com/support
DC-0006414
2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current
Typical 2-Tone Performance as Measured in the 2.5 GHz Sample Board:
1 MHz Tone Spacing, VDS = 48 V, IDQ = 75 mA, TC = 25°C (Unless Noted)
2-Tone IMD vs. Output Power
-50
-45
-40
-35
-30
-25
-20
0.1 1 10
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
IMD (dBc)
POUT (W-PEP)
50
15
16
17
18
19
20
0.1 1 10
50mA
75mA
112mA
150mA
175mA
Gain (dB)
POUT (W-PEP)
50
12.5 W GaN Wideband Transistor
DC - 3.5 GHz
Preliminary - Rev. V4P
NPT2018
8
Preliminary Information
PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit: https://www.macom.com/support
DC-0006414
3x6 mm 14-Lead DFN Plastic Package†
† Reference Application Note S2083 for lead-free solder reflow recommendations.
Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Ni / Pd / Au.
Recommended Via Pattern
Dimensions in inches.
12.5 W GaN Wideband Transistor
DC - 3.5 GHz
Preliminary - Rev. V4P
NPT2018
9
Preliminary Information
PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit: https://www.macom.com/support
DC-0006414
MACOM Technology Solutions Inc. All rights reserved.
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products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
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