NPT2018 12.5 W GaN Wideband Transistor DC - 3.5 GHz Preliminary - Rev. V4P Features GaN on Si HEMT D-Mode Transistor Suitable for Linear and Saturated Applications Tunable From DC - 3.5 GHz 48 V Operation 16 dB Gain @ 2.5 GHz 56 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Lead-Free 3x6 mm 14-Lead PDFN Package RoHS* Compliant and 260C Reflow Compatible Functional Schematic Description The NPT2018 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 12.5 W (41 dBm) in an industry standard surface mount plastic package. The NPT2018 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. NC 7 8 NC NC 6 9 NC RFIN / VG 5 10 RFOUT / VD RFIN / VG 4 11 RFOUT / VD RFIN / VG 3 12 RFOUT / VD NC 2 NC 1 Built using the SIGANTIC(R) process - a proprietary GaN-on-Silicon technology. Ordering Information1 15 13 NC 14 NC Pin Configuration Part Number Package NPT2018-000PPR Bulk 1-2, 6-9, 13-14 NC No Connection NPT2018-SMBPPR Sample Board 3-5 RFIN / VG RF Input / Gate 10-12 RFOUT / VD RF Output / Drain 15 Paddle2 Ground / Source 1. Reference Application Note M513 for reel size information. 2. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * 1 Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. For further information and support please visit: https://www.macom.com/support DC-0006414 Preliminary Information NPT2018 12.5 W GaN Wideband Transistor DC - 3.5 GHz Preliminary - Rev. V4P Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 2.5 GHz GSS - 18 - dB Saturated Output Power CW, 2.5 GHz PSAT - 41.2 - dBm Drain Efficiency at Saturation CW, 2.5 GHz SAT - 56 - % Power Gain 2.5 GHz, POUT = 12.5 W GP - 16 - dB Drain Efficiency 2.5 GHz, POUT = 12.5 W - 53 - % Ruggedness: Output Mismatch All phase angles VSWR = 10:1, No Device Damage DC Electrical Characteristics: TA = 25C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 160 V IDLK - - 3.2 mA Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 1.6 mA Gate Threshold Voltage VDS = 48 V, ID = 3 mA VT -2.5 -1.5 -0.5 V Gate Quiescent Voltage VDS = 48 V, ID = 75 mA VGSQ -2.1 -1.2 -0.3 V On Resistance VDS = 2 V, ID = 22 mA RON - 1.6 - Maximum Drain Current VDS = 7 V pulsed, pulse width 300 s ID,MAX - 1.75 - A Parameter Test Conditions Symbol Min. Typ. Max. Units Thermal Resistance VDS = 48 V, TJ = 200C RJC - 6.5 - C/W Thermal Characteristics3,4 3. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. 4. The thermal resistance of the mounting configuration must be added to the device RJC , for proper Tj calculation during operation. The recommended via pattern, shown on page 5, on a 20 mil thick, 1oz plated copper, PCB adds an additional 3.4 C/W to the typical value. 2 PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. For further information and support please visit: https://www.macom.com/support DC-0006414 Preliminary Information RF Electrical Specifications: TA = 25C, VDS = 48 V, IDQ = 75 mA NPT2018 12.5 W GaN Wideband Transistor DC - 3.5 GHz Handling Procedures Please observe the following precautions to avoid damage: Parameter Absolute Maximum Drain Source Voltage, VDS 160 V Gate Source Voltage, VGS -10 to 3 V Gate Current, IG 6 mA Junction Temperature, TJ +200C Operating Temperature -40C to +85C Bias Sequencing Storage Temperature -65C to +150C Turning the device ON 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 7. Operating at nominal conditions with TJ 200C will ensure MTTF > 1 x 106 hours. Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices. 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (48 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. 3 PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. For further information and support please visit: https://www.macom.com/support DC-0006414 Preliminary Information Absolute Maximum Ratings5,6,7 Preliminary - Rev. V4P NPT2018 12.5 W GaN Wideband Transistor DC - 3.5 GHz Preliminary - Rev. V4P Load-Pull Performance: VDS = 48 V, IDQ = 75 mA, TC = 25C Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance Frequency (MHz) ZS () ZL () PSAT (W) GSS (dB) Drain Efficiency at PSAT (%) 900 5.7 + j16.4 27 + j46.2 14.5 29.0 62 1800 5.4 + j6.3 18.6 + j36.2 14.2 22.0 59 2500 5.2 + j4 11.8 + j27.1 14.0 19.0 57 3500 5.3 + j2.1 7.9 + j17.5 13.0 16.5 55 ZS and ZL vs. Frequency ZS ZL Gain vs. Output Power Drain Efficiency vs. Output Power 35 70 60 Drain Efficiency (%) Gain (dB) 30 25 20 15 10 20 900 MHz 1800 MHz 2500 MHz 3500 MHz 25 50 900 MHz 1800 MHz 2500 MHz 3500 MHz 40 30 20 10 30 35 40 45 Output Power (dBm) 4 Preliminary Information Impedance Reference 0 20 25 30 35 40 45 Output Power (dBm) PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. For further information and support please visit: https://www.macom.com/support DC-0006414 NPT2018 12.5 W GaN Wideband Transistor DC - 3.5 GHz Preliminary - Rev. V4P 2.5 GHz Sample Board Parts are tested in a narrowband 2.5 GHz sample board (20-mil thick RO4350). Electrical and thermal grounding is provided using a standard-plated densely packed via hole array (see recommended via pattern). Parts List Ref. Designator L1 Value Tolerance Manufacturer 10 nH 2% Coilcraft 0603HP-10NXGLU C1 1 uF 10% Murata GRM188R61H105KAALD C2 10 pF 2% Passive Plus 0603N100GW251 C3 18 pF 2% Passive Plus 0603N180GW251 C4 10 nF 10% Murata GCM188R72A103KA37D C5 5 Mfg. Part Number Not Used C6 0.6 pF 0.05 pF Passive Plus 0603N0R6AW251 C7 1.8 pF 0.1 pF Passive Plus 0603N1R8BW251 C8 2.4 pF 0.1 pF Passive Plus 0603N2R4BW251 C9 4.7 pF 0.1 pF Passive Plus 0603N4R7BW251 C10 10 pF 2% Passive Plus 0603N100GW251 C11 2.7 pF 0.1 pF Passive Plus 0603N2R7BW251 C12 0.2 pF 0.1 pF Passive Plus 0603N0R2BW251 C13 0.6 pF 0.05 pF Passive Plus 0603N0R6AW251 R1 300 5% Panasonic ERJ-3GEYJ301V R2 100 5% Panasonic ERJ-3GEYJ101V R3 43 5% Panasonic ERJ-3GEYJ430V PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. For further information and support please visit: https://www.macom.com/support DC-0006414 Preliminary Information Matching is provided using a combination of lumped elements and transmission lines as shown in the layout to the left. Recommended tuning solution component placement, transmission lines, and details are shown below. NPT2018 12.5 W GaN Wideband Transistor DC - 3.5 GHz Preliminary - Rev. V4P Typical Performance as Measured in the 2.5 GHz Sample Board: CW, VDS = 48 V, IDQ = 75 mA (Unless Noted) Drain Efficiency vs. Output Power Over Temperature 60 18 50 Drain Efficiency (%) 19 Gain (dB) 17 16 15 14 13 15 +25C -40C +85C 20 +25C -40C +85C 40 30 20 10 25 30 35 40 45 Output Power (dBm) 0 15 20 25 30 35 40 45 Output Power (dBm) Quiescent VGS vs. Temperature -1.0 -1.1 38 mA 75 mA 110 mA VGSQ (V) -1.2 -1.3 -1.4 -1.5 -1.6 -50 -25 0 25 50 75 100 Temperature (C) 6 PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. For further information and support please visit: https://www.macom.com/support DC-0006414 Preliminary Information Gain vs. Output Power Over Temperature NPT2018 12.5 W GaN Wideband Transistor DC - 3.5 GHz Preliminary - Rev. V4P Typical 2-Tone Performance as Measured in the 2.5 GHz Sample Board: 1 MHz Tone Spacing, VDS = 48 V, IDQ = 75 mA, TC = 25C (Unless Noted) 2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current -15 20 50mA 75mA 19 112mA 150mA 175mA Gain (dB) IMD (dBc) -25 -30 -35 18 17 50mA 75mA 112mA 150mA 175mA 16 -40 -45 0.1 1 10 50 15 0.1 1 10 50 POUT (W-PEP) POUT (W-PEP) 2-Tone IMD vs. Output Power -20 -25 IMD (dBc) -30 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 -35 -40 -45 -50 0.1 1 10 50 POUT (W-PEP) 7 PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. For further information and support please visit: https://www.macom.com/support DC-0006414 Preliminary Information -20 NPT2018 12.5 W GaN Wideband Transistor DC - 3.5 GHz Preliminary - Rev. V4P Preliminary Information 3x6 mm 14-Lead DFN Plastic Package Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 3 requirements. Plating is Ni / Pd / Au. Recommended Via Pattern Dimensions in inches. 8 PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. S pecifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. For further information and support please visit: https://www.macom.com/support DC-0006414 NPT2018 Preliminary - Rev. V4P MACOM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with MACOM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. 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For further information and support please visit: https://www.macom.com/support DC-0006414 Preliminary Information 12.5 W GaN Wideband Transistor DC - 3.5 GHz