2N4402 - Continental Device India Limited

Continental Device India Limited Data Sheet Page 1 of 6

2N4400, 2N4401

2N4402, 2N4403

ABSOLUTE MAXIMM RATINGS

Rating Symbol 2N4400/01 2N4402/03 Units

Collector-Emitter Voltage VCEO 40 40 V

Collector-Base Voltage VCBO 60 40 V

Emitter-Base Voltage VEBO 65V

Collector Current Continuous IC- 600 - mA

Power Dissipation At Ta=25 ºC PD- 625 - mW

Derate Above 25 ºC - 5.0 - mW/ºC

Power Dissipation At Tc=25 ºC PD- 1.5 - W

Derate Above 25 ºC - 12 - mW/ºC

Operating & Storage Tj,Tstg -55 to +150 ºC

Junction Temperature Range

THERMAL RESISTANCE

Junction to Case Rth (j-c) - 83.3 - ºC/W

Junction to Ambient Rth (j-a) - 200 - ºC/W

ELECTRICAL CHARACTERISTICS (Ta =25 ºC unless otherwise specified)

2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS

2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Switching Applications

1 = EMITTER

2 = BASE

3 = COLLECTOR

DIM MIN MAX

A 4,32 5,33

B 4,45 5,20

C 3,18 4,19

D 0,41 0,55

E 0,35 0,50

F 5 DEG

G 1,14 1,40

H 1,14 1,53

K 12,70 –

L 1.982 2.082

ALL DIMENSIONS IN M.M.

E B C

1 2 3

TO-92 Plastic Package

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

Continental Device India Limited Data Sheet Page 2 of 6

Characteristic Symbol 2N4400/01 2N4402/03 Unit

Collector Emitter Voltage

IC=1mA, IB=0 BVCEO* >40 >40 V

Collector Base Voltage

IC=100µA, IE=0 BVCBO >60 >40 V

Emitter Base Voltage

IE=100µA, IC=0 BVEBO >6 >5 V

Base Cutoff Current

VCE=35V, VBE=0.4V IBEV <0.1 <0.1 µA

Collector Cutoff Current

VCE=35V, VBE=0.4V ICEX <0.1 <0.1 µA

Collector-Emitter

Saturation Voltage

IC=150mA, IB=15mA VCE (sat)* <0.4 <0.4 V

IC=500mA, IB=50mA <0.75 <0.75 V

Base-Emitter

Saturation Voltage

IC=150mA, IB=15mA VBE (sat)* 0.75 to 0.95 0.75 to 0.95 V

IC=500mA,IB=50mA <1.2 <1.3 V

Characteristic Symbol 2N4400 2N4401 2N4402 2N4403 Unit

D C Current Gain

IC=0.1mA,VCE=1V hFE - >20 - >30

IC=1mA,VCE=1V >20 >40 >30 >60

IC=10mA,VCE=1V >40 >80 >50 >100

IC=150mA,VCE=1V* 50-150 100-300 - -

IC=150mA,VCE=2V* - - 50-150 100-300

IC=500mA,VCE=2V* >20 >40 >20 >20

DYNAMIC CHARACTERISTICS

Small Signal Current Gain

IC=1mA, VCE=10V, f=1KHz hfe 20-250 40-500 30-250 60-500

Input Impedance

IC=1mA, VCE=10V, f=1KHz hie 0.5-7.5 1.0-15 0.75-7.5 1.5-15 KΩ

2N4400, 2N4401

2N4402, 2N4403

Continental Device India Limited Data Sheet Page 3 of 6

Characteristic Symbol 2N4400 2N4401 2N4402 2N4403 Unit

Voltage Feedback Ratio hre ALL 0.1-8.0 x10–4

IC=1mA, VCE=10V, f=1KHz

Output Admittance

IC=1mA, VCE=10V, f=1KHz hoe 1.0-30 1.0-30 1.0-100 1.0-100 µ

Collector-Base Capacitance

VCB=5V, IE=0, f=100KHz Ccb <6.5 <6.5 - - pF

VCB=10V, IE=0, f=140KHz - - <8.5 <8.5 pF

Emitter-Base Capacitance

VEB=0.5V, IC=0, f=100KHz Ceb <30 <30 - - pF

VEB=0.5V, IC=0, f=140KHz - - <30 <30 pF

Transition Frequency

IC=20mA, VCE=10V fT>200 >250 >150 >200 MHz

f=100MHz

SWITCHING CHARACTERISTICS

VCC=30V, VEB=2V,

C=150mA, IB1=15mA

Delay time td ALL <15 ns

Rise time tr ALL <20 ns

CC=30V, IC=150mA,

B1=IB2=15mA

Storage time ts ALL <225 ns

Fall time tf ALL <30 ns

*Pluse Test : Pluse width ≤ 300µs, duty ≤ 2.0%.

2N4400, 2N4401

2N4402, 2N4403

Continental Device India Limited Data Sheet Page 4 of 6

2N4400, 2N4401

2N4402, 2N4403

DC Current Gain

hFE, DC Current Gain (Normalized)

IC Collector Current (mA)

TJ=125°C

25°C

IC=1.0mA 10mA 100mA 500mA

TJ=25°C

DC Current Gain

VCE, Collector-Emitter Voltage (V)

IB Base Current (mA)

IC Collector Current (mA)

On Voltages

TJ=25°C

VBE@VCE=1.0V

VCE(sat)@IC/IB=10

VCE=1.0V

VCE=10V

–55°C

VBE(sat)@IC/IB=10

Voltage (V)

Continental Device India Limited Data Sheet Page 5 of 6

2N4400, 2N4401

2N4402, 2N4403

DC Current Gain

hFE, DC Current Gain (Normalized)

IC Collector Current (mA)

VCE=1.0V

VCE=10V TJ=125°C

25°C

–55°C

Collector Saturation Region

VCE Collector-Emitter Voltage (V)

IB Base Current (mA)

IC=1mA 100mA 500mA

IC Collector Current (mA)

On Voltages

TJ=25°C

VBE(sat)@IC/IB=10

VBE@VCE=1.0V

VCE(sat)@IC/IB=10

10mA

Voltage (V)

Continental Device India Limited Data Sheet Page 6 of 6

Notes

Disclaimer

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited

for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as

to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/

CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete

information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;

neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life

saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor

Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own

risk and CDIL will not be responsible for any damages resulting from such sale(s).

CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.

CDIL is a registered Trademark of

Continental Device India Limited

C-120 Naraina Industrial Area, New Delhi 110 028, India.

Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119

email@cdil.com www.cdilsemi.com