SOURCE
GATEDRAIN
2-4
37-47
91-98
75.5
38
15-20
110-120
47-55
27
4-7
Excelics EPA018A-SOT23
PRELIMINARY DATA SHEET
DC-6GHz High Efficiency Heterojunction Power FET
• LOW COST SURFACE-MOUNT PLASTIC PACKAGE
• +20.0dBm TYPICAL OUTPUT POWER
• 17.0dB TYPICAL POWER GAIN AT 2GHz
• 0.7dB TYPICAL NOISE FIGURE AT 2GHz
• +27dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT
2GHz
• 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P1dB Output Power at 1dB Compression f=2GHz
Vds=6V, Ids=30mA 18.0
20.0
dBm
G1dB Gain at 1dB Compression f=2GHz
Vds=6V, Ids=30mA 15.0
17.0
dB
NF Noise Figure, Vds=2V, Ids=15mA f=2GHz
Vds=6V, Ids=30mA 0.7
0.9 dB
IP3 Output 3rd Ord e r Intercept Point f=2GHz
Vds=6V, Ids=30mA 27 dBm
Idss Saturated Drain Current Vds=3V, Vgs=0V 30 55 80 mA
Gm Transconductance Vds=3V, Vgs=0V 35 60 mS
Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0 -2.5 V
BVgd Drain Breakdown Voltage Igd=0.5mA -9 -15 V
BVgs Source Breakdown Voltage Igs=0.5mA -7 -14 V
Rth Thermal Resistance 450* oC/W
* Overall Rt h depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds Drain-Source V oltage 12V 6V
Vgs Gate-Source Voltage -8V -3V
Ids Dra i n Current Idss 45mA
Igsf Forward Gate Current 9mA 1.5mA
Pin Input Power 16dBm @3dB Compression
Tch Channel Temperature 175oC 150oC
Tstg Storage Temperature -65/175oC -65/150oC
Pt Total Power Dissipation 330mW 280mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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