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PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 1
October 2008
PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at collector currents to 300mA.
• Sourced from process 10.
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings ar e based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Thermal Characteristics TA=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6 ” × 1.6” × 0.06."
Symbol Parameter Ratings Units
VCEO Collector-Emitter Voltage 45
VCBO Collector-Base Voltage 75
VEBO Emitter-Base Voltage 6.0
ICCollector current - Continuous 500
TJ, Tstg Junction and Storage Temperature -55 ~ +150
Symbol Parameter Max. Units
PN100
PN100A *MMBT100
*MMBT100A
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
TO-92
1
1. Emitter 2. Base 3. Collector
Mark: PN100/PN100A
SOT-23
B
E
C
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 2
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
BVCBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 75 V
BVCEO Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 45 V
BVEBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6.0 V
ICBO Collector-Base Cutoff Current VCB = 60V 50 nA
ICES Collector-Emiitter Cutoff Current VCE = 40V 50 nA
IEBO Emitter Cutoff Current VEB = 4V 50 nA
On Characteristics
hFE DC Current Gain IC = 100μA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V*
IC = 150mA, VCE = 5.0V *
100
100A
100
100A
100
100A
80
240
100
300
100
100
100
450
600
350
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 200mA, IB = 20mA 0.2
0.4 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 200mA, IB = 20mA 0.85
1.0 V
V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product VCE = 20V, IC = 20mA 250 MHz
Cobo Output Capacitance VCB = 5.0V, f = 1.0MHz 4.5 pF
NF Noise Figure IC = 100μA, VCE = 5.0V
RG = 2.0kΩ, f = 1.0KHz 100
100A 5.0
4.0 dB
dB
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 3
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature Figure 6. Input and Output Capacitance
vs Reverse Voltag
vs Collector Current
10 20 30 50 100 200 300 500
0
100
200
300
400
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
Vce = 5V
Volt age vs Col lecto r Curren t
110100400
0.1
0.2
0.3
0.4
I - CO LLECTOR CUR RE NT (m A)
V - CO LL ECTOR- EMITT ER VOL TAGE (V
)
C
CESAT
25 °C
- 4 0 °C
125 °C
β
= 10
Base-Emitter Saturation
Vol t age v s Col lect o r C u rr en t
0.1 1 10 100 300
0.2
0.4
0.6
0.8
1
I - COLLE C TOR CUR RENT (m A)
V - CO LLECTO R- EM ITTER VO LT A GE (V
)
β
= 10
C
BESAT
25 °C
- 40 °C
125 °C
Collector Current
110100500
0.2
0.4
0.6
0.8
1
I - COLLEC TO R CURRENT (m A)
V - B AS E-E MITTER O N VOLT A GE (V
)
C
BEON
V = 5V
CE
25 ° C
- 40 ° C
125 °C
25 50 75 100 125 15
0
0.1
1
10
T - A MBI ENT TEMPER AT UR E ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
V = 6 0V
°
CB
0.1 1 10 10
0
0.1
1
10
100
V - COLLEC TOR VOLT AG E (V)
CA PACITANCE (pF)
Cib
Cob
f = 1.0 MHz
ce
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 4
Typical Characteristics (Continued)
Figure 7. Switching Times vs
Collector Current Figure 8. Power Dissipation vs
Ambient Temperature
10 20 30 50 100 200 30
0
0
30
60
90
120
150
180
210
240
270
300
I - COLLECTOR CURRENT (mA)
TIME (nS)
IB1 = IB2 = Ic / 10
V = 10 V
C
cc
ts
td
tftr
025507510012515
0
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 5
Package Dimension (TO92)
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 6
Package Dimension (SOT23)
PN100/PN100A/MMBT100/MMBT100A NPN General Purpose AmplifierPN100/PN100A/MMBT100/MMBT100A
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 7
Rev. I31
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is not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHA NGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
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2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
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®
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QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
UniFET™
VCX™
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Advance Information Formative or In Design This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-
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mation only.
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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