Single Phase Rectifier Bridges PSB 95 IdAVM VRRM = 95 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 95/08 PSB 95/12 PSB 95/14 PSB 95/16 PSB 95/18 ~ ~ Symbol Test Conditions IdAVM IFSM TC = 85C, module TVJ = 45C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 95 1200 1350 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1040 1120 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7200 9110 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5400 6270 A2 s A2 s -40 ... + 150 150 -40 ... + 125 C C C 2500 3000 V V 5 5 220 Nm Nm g i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered, E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM 0.3 6.0 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25C For power-loss calculations only TVJ = TVJM 1.5 0.8 5.0 V V m per diode; DC current per module 0.9 0.225 K/W K/W RthJK per diode; DC current per module 1.1 0.275 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 8.0 4.5 50 mm mm m/s2 TVJ = 25C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str.53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/ PSB 95 10 IF(OV) -----IFSM 200 IFSM (A) TVJ=45C TVJ=150C A 1200 1.6 160 2 As 1040 TVJ=45C 1.4 T=150C 120 4 TVJ=150C 1.2 80 1 0 VRRM 0.8 40 1/2 VRRM 0.6 T=25C IF 1 VRRM 10 0 VF 1 0.4 1.5 V 0 10 Fig. 1 Forward current versus voltage drop per diode 300 [W] 1 2 10 t[ms] 10 80 250 2 = RTHCA [K/W] 0.28 120 90 [A] 100 95 4 t [ms] 105 0.44 115 125 50 PVTOT 0 IFAVM 0 100 [A] 40 130 135 1.77 140 145 C 150 50 60 120 0.77 DC sin.180 rec.120 rec.60 rec.30 80 110 150 100 10 DC sin.180 rec.120 rec.60 rec.30 100 200 6 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) TC 85 0.19 0.11 1 3 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration PSB 95 3 Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 20 I dAV 0 50 100 TC(C) 150 200 Fig.5 Maximum forward current at case temperature K/W 1.2 Z thJK 1 Z thJC 0.8 0.6 0.4 0.2 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str.53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/