Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
1SS400CS
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
High speed switching
Features
1)Ultra small mold type.(VMN2)
2)High reliability.
Construction
Silicon epitaxial planer Structure
Absolute maximum ratings (Ta=25C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge mA
Tj C
Tstg C
Electrical characteristics (Ta=25C)
Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF- - 1.2 V IF=100mA
IR- - 100 nA VR=80V
Ct- - 3.0 pF VR=0.5V f=1.0MHz
trr - - 4.0 ns VR=6V IF=10mA RL＝100Ω
Reverse voltage (DC)
Forward current (repetitive peak)
Average rectified forward current
Surge current (1S)
Taping dimensions (Unit : mm)
Parameter
Reverse voltage (repetitive peak)
Junction temperature
Storage temperature
Limits
90
80
225
100
500
150
55 to 150
Parameter
Reverse current
Capacitance between terminal
Reverse recovery time
VMN2
0.55
0.5
0.45
0.45
ROHM : VMN2
dot (year week factory)
0.16±0.05
0.37±0.03
0.6±0.05
0.35±0.1
0.9±0.05
1.0±0.05
0.156
0.7±0.05 4.0±0.1
2±0.05
φ0.5
4±0.1 2±0.05 φ1.55
1.75±0.1
8.0±0.2
3.5±0.05
1.1±0.05
0.2±0.05
0.52
1/4 2011.12 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS400CS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
20
40
60
80
100
120
140
160
180
200
870
880
890
900
910
920
0.1
1
10
0 5 10 15 20
0.1
1
10
100
1000
10000
100000
020 40 60 80 100 120
Ta=150°C
0.01
0.1
1
10
100
1000
0200 400 600 800 1000 1200 1400
Ta=150°C
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
Ta=-25°C
Ta=125°C
Ta=75°C Ta=25°C
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Ta=-25°C
Ta=125°C
Ta=25°C
Ta=75°C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
f=1MHz
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
AVE:888.3mV
Ta=25°C
VF=100mA
n=30pcs
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
Ta=25°C
VR=80V
n=30pcs
AVE:20.90nA
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
AVE:0.595pF
Ta=25°C
f=1MHz
VR=0.5V
n=10pcs
2/4 2011.12 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS400CS
0
1
2
3
4
5
6
7
8
9
10
AVE:1.60kV
AVE:6.48kV
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
0
5
10
110 100
0
5
10
110 100
1
1.2
1.4
1.6
1.8
2
0
5
10
15
20
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
AVE:3.90A
8.3ms
IFSM
1cyc
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
AVE:1.489ns
Ta=25°C
VR=6V
IF=10mA
RL=100Ω
n=10pcs
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
8.3ms
IFSM
1cyc
8.3ms
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
TRANSIENT
THERMAL IMPEDANCE:Rth(°C/W)
TIME:t(s)
Rth-t CHARACTERISTICS
3/4 2011.12 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS400CS
0
0.05
0.1
0.15
0.2
0.25
0.3
025 50 75 100 125 150
0
0.001
0.002
0.003
020 40 60 80 100 120
0
0.1
0.2
0.3
0 0.05 0.1 0.15 0.2
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Sin(θ＝180)
D=1/2
DC
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
D=1/2
DC
Sin(θ＝180)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Ta(°C)
DERATING CURVE(Io-Ta)
Sin(θ＝180)
DC
D=1/2
4/4 2011.12 - Rev.A
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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