DATA SHEET
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
© 2000
Document No. P14945EJ1V0DS00 (1st edition)
Date Published July 2000 NS CP(K)
Printed in Japan
PHOTOCOUPLER
PS2711-1
HIGH CTR
4-PIN SOP PHOTOCOUPLER −NEPOCTM Series−
DESCRIPTION
The PS2711-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor in a plastic SOP for high density applications.
The package is an SOP (Small Outline Package) type for high density mounting applications.
FEATURES
• High current transfer ratio (CTR = 200 % TYP. @ IF = 1mA)
• High isolation voltage (BV = 3 750 Vr.m.s.)
• Small and thin package (4-pin SOP)
• Ordering number of tape product: PS2711-1-F3, F4
• UL approved: File No. E72422 (S)
APPLICATIONS
• Programmable logic controllers
• Small power supply
•Hybrid IC
• Modem/FAX
Data Sheet P14945EJ1V0DS00
2
PS2711-1
TOP VIEW
PACKAGE DIMENSIONS
in millimeters
1. Anode
2. Cathode
3. Emitter
4. Collector
43
12
4±0.5
7.0±0.3
4.4
0.5±0.3
0.15
+0.10
–0.05
0.1±0.1
2.1±0.2
2.54
0.4
+0.10
–0.05
0.25 M
MARKING
2711
N003
Trade Mark
Type Number
Assembly Lot
No. 1 pin Mark
N003
Week Assembled
Year Assembled
(Last 1 Digit)
CTR Rank Name
Data Sheet P14945EJ1V0DS00 3
PS2711-1
ORDERING INFORMATION
Part Number Package Packi ng Styl e Safety Standards
Approval Appl i cation P art
Number*1
PS2711-1 4-pin SOP 50 pcs (Tape 50 pc s cut) UL approved PS2711-1
PS2711-1-F3 Embossed Tape 3 500 pcs/reel
PS2711-1-F4
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°
°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) IF50 mA
Reverse Vol tage VR6V
Power Dissipati on Derating
∆
PD/°C0.8mW/
°C
Power Dissipati on PD80 mW
Peak Forward Current*1 IFP 0.5 A
Transistor Collector to Emitter Voltage VCEO 40 V
Emitter to Collector Voltage VECO 5V
Collector Current IC40 mA
Power Dissipati on Derating
∆
PC/°C1.5mW/
°C
Power Dissipati on PC150 mW
Isolat i on Voltage*2 B V 3 750 Vr.m. s .
Operating Am bi ent Tem perature TA–55 to +100 °C
Storage Temperat ure Tstg –55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet P14945EJ1V0DS00
4
PS2711-1
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VFIF = 5 mA 1.15 1.4 V
Reverse Current IRVR = 5 V 5
µ
A
Terminal Capaci tance CtV = 0 V, f = 1 MHz 30 pF
Transistor Collector to Emitter Dark
Current ICEO IF = 0 mA, VCE = 40 V 100 nA
Coupled Current Transfer Ratio
(IC/IF)*1 CTR IF = 1 mA, VCE = 5 V 100 200 400 %
Collector Saturation Voltage VCE (sat) IF = 1 mA, IC = 0.2 mA 0.3 V
Isolat i on Resistance RI-O VI-O = 1 kVDC 1011 Ω
Isolat i on Capacitance CI-O V = 0 V, f = 1 M Hz 0.4 pF
Rise Time*2 trVCC = 5 V, I C = 2 mA, RL = 100 Ω4
µ
s
Fall Time*2 tf5
*1 CTR rank
N : 100 to 400 (%)
K : 200 to 400 (%)
L : 150 to 300 (%)
M: 100 to 200 (%)
*2 Test circuit for switching time
V
CC
V
OUT
I
F
R
L
= 100 Ω
50 Ω
Pulse Input
In monitor
PW = 100 s
Duty cycle = 1/10
µ
Data Sheet P14945EJ1V0DS00 5
PS2711-1
TYPICAL CHARACTERISTICS (TA = 25 °
°°
°C, unless otherwise specified)
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Ambient Temperature T
A
(˚C)
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
100
10
1
0.1
0.01
0.0 0.5 1.0 1.5 2.0
0 ˚C
–25 ˚C
–50 ˚C
+60 ˚C
+25 ˚C
T
A
= +100 ˚C
200
150
100
50
025 50 75 100
6842010
25
20
15
10
5
I
F
= 10 mA
5 mA
2 mA
1 mA
0.5 mA
–25 025 50 75 100
1
10
100
1 000
10 000
V
CE
= 40 V
20 V
10 V
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0
2 mA
5 mA
10 mA
1 mA
I
F
= 0.5mA
100
40
60
20
025 50 75 100
80
Data Sheet P14945EJ1V0DS00
6
PS2711-1
FREQUENCY RESPONSE
Frequency f (kHz)
Normalized Gain Gv
LONG TERM CTR DEGRADATION
Time (Hr)
CTR (Relative Value)
Forward Current I
F
(mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 1 mA, V
CE
= 5 V
Ambient Temperature T
A
(˚C)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Switching Time t ( s)
µ
Load Resistance R
L
(kΩ)
SWITCHING TIME vs.
LOAD RESISTANCE
Load Resistance R
L
(kΩ)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
µ
100
10
1
0.1 10 k
1 k
10010
I
C
= 2 mA,
V
CC
= 5 V,
CTR = 200 %
0
–5
–10
–15
–20
–25
0.1 110 100 1 000
100 Ω
300 Ω
R
L
= 1 kΩ
1.2
1.0
0.8
0.6
0.4
0.2
010
2
10
3
10
4
10
5
10
6
10
T
A
= 25 ˚C
T
A
= 60 ˚C
I
F
= 1 mA
t
f
t
r
t
d
t
s
0.1
1
10
100
1 000 I
F
= 1 mA,
V
CC
= 5 V,
CTR = 200 %
100 1k 10 k 100 k
t
f
t
s
t
r
t
d
1.2
1.4
–50
1.0
0.8
0.6
0.4
0.2
0.0 –25 025
50 75 100 0.1 110 100
0
100
200
300
400
500 V
CE
= 5 V,
n = 3
1.6
0.01
Remark The graphs indicate nominal characteristics.
Data Sheet P14945EJ1V0DS00 7
PS2711-1
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1 1.55±0.1
1.75±0.1
5.5±0.1
12.0±0.2
4.6±0.1
2.4±0.1
7.4±0.1
0.3
8.0±0.1
Tape Direction
PS2711-1-F3 PS2711-1-F4
Outline and Dimensions (Reel)
Packing: 3 500 pcs/reel
12.4+2.0
–0.0
80±5.0
φ
13.0±0.5
φ
330
φ
1.5±0.5
2.0±0.5
6.0±1
21.0±0.8
φ
1
2
0
˚
6
0
˚
1.5
Data Sheet P14945EJ1V0DS00
8
PS2711-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 235 °C or below (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
60 to 120 s
(preheating)
210 ˚C
100 to 160 ˚C
Package Surface Temperature T (˚C)
Time (s)
(heating)
to 10 s
to 30 s
235 ˚C (peak temperature)
Recommended Temperature Profile of Infrared Reflow
(2) Dip soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
(3) Cautions
•Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
corrector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings .
Data Sheet P14945EJ1V0DS00 9
PS2711-1
[MEMO]
Data Sheet P14945EJ1V0DS00
10
PS2711-1
[MEMO]
Data Sheet P14945EJ1V0DS00 11
PS2711-1
[MEMO]
PS2711-1
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
M8E 00. 4
The information in this document is current as of July, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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