2SC5915 Ordering number : EN7408A SANYO Semiconductors DATA SHEET 2SC5915 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications * Relay drivers, lamp drivers, motor drivers, inverters. Features * * * * * Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCES 120 120 V VCEO VEBO 50 V 6 V 10 A Collector Current (Pulse) IC ICP 15 A Base Current IB Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C V 2 A 1.65 W 25 W 150 C --55 to +150 C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 22410FA TK IM / 13003 TS IM TA-100348 No.7408-1/4 2SC5915 Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO min typ VCE=2V, IC=1A VCE=2V, IC=5A hFE2 Unit max VCB=40V, IE=0A VEB=4V, IC=0A hFE1 DC Current Gain Ratings Conditions 200 10 A 10 A 560 100 Gain-Bandwidth Product fT Output Capacitance Cob VCE=5V, IC=1A VCB=10V, f=1MHz 200 MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=5A, IB=250mA IC=5A, IB=250mA 180 360 Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO 0.93 1.4 Collector-to-Emitter Breakdown Voltage V(BR)CES Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-On Time ton tstg See specified test circuit. 40 Storage Time See specified test circuit. 1000 ns Fall Time tf See specified test circuit. 80 ns 60 IC=100A, IE=0A IC=100A, RBE=0 IC=1mA, RBE= IE=100A, IC=0A Package Dimensions Package Dimensions unit : mm (typ) 7513-004 unit : mm (typ) 7001-002 V 120 V 120 V 50 V 6 V ns 4.5 0.2 10.2 1 2 1.4 1.35 8.8 1.5MAX 1.3 9.9 3.0 pF mV 3 0.8 0 to 0.3 1.2 0.4 2.55 2.7 2.55 2.55 1 : Base 2 : Collector 3 : Emitter 2.55 SANYO : SMP-FD Switching Time Test Circuit IB1 PW=20s D.C.1% INPUT OUTPUT IB2 VR RB RL 50 + 100F VBE= --5V + 470F VCC=20V IC=20IB1= --20IB2=3A No.7408-2/4 2SC5915 IC -- VCE 0mA 8 6 8 A m 90 7 30mA mA 6 5 4.5 50mA 40mA 20mA 4 10mA 3 IB=0mA 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-to-Emitter Voltage, VCE -- V 4mA 2mA IB=0mA 1 2 3 4 DC Current Gain, hFE 5 25 C --25 C C 4 2 7 8 9 10 IT05554 VCE=2V 7 5 6 6 hFE -- IC 1000 8 5 Collector-to-Emitter Voltage, VCE -- V IT05553 3 Ta=75C 25C 2 --25C 100 7 5 3 Ta= 7 Collector Current, IC -- A 1.5 0 10 2 10 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 0.01 2 3 5 7 1.0 2 3 5 7 10 IT05559 Cob -- VCB 1000 f=1MHz 7 Output Capacitance, Cob -- pF 3 2 100 7 5 3 2 3 2 100 7 5 3 2 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 7 5 0.1 5 7 10 IT05561 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 0.1 7 5 C 5 =7 Ta C 5 --2 3 2 C 5 2 0.01 7 5 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT05556 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT05560 VCE(sat) -- IC 2 IC / IB=20 7 5 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 1.0 3 0.01 5 7 0.1 5 5 10 0.01 3 Collector Current, IC -- A VCE=5V 7 2 IT05555 f T -- IC 1000 Gain-Brandwidth Product, f T -- MHz 6mA 0 VCE=2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 8mA 2.0 5.0 IC -- VBE 12 10mA 2.5 0.5 1.0 12mA 3.0 1 0.5 14mA 3.5 1.0 0 16mA 4.0 2 0 18mA 20 m A A 70m 100 Collector Current, IC -- A 9 IC -- VCE 5.0 0mA Collector Current, IC -- A 10 IC / IB=50 1.0 7 5 3 2 25 0.1 7 C C 75 C 5 --2 5 = Ta 3 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT05557 No.7408-3/4 2SC5915 VBE(sat) -- IC 10 3 2 2 1.0 7 5 n 3 3 2 tio 75C 5 3 2 0.1 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 1.8 Tc=25C Single pulse 0.01 0.1 5 7 10 IT05558 ms era 7 10 IC=10A op 25C Ta= --25C 1.0 10 7 5 50s 10s 100ms DC Collector Current, IC -- A 5 ICP=15A s 0 10 s 0 50 s 1m Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 ASO 3 2 IC / IB=20 5 7 IT05562 PC -- Tc 30 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 1.65 1.6 1.4 1.2 N o 1.0 he at sin k 0.8 0.6 0.4 25 20 15 10 5 0.2 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT05563 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT05564 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice. PS No.7408-4/4