Advance Technical Information IXFA16N60P3 IXFP16N60P3 IXFH16N60P3 Polar3 TM HiPerFETTM Power MOSFETs VDSS ID25 = 600V = 16A 440m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 16 A IDM TC = 25C, Pulse Width Limited by TJM 40 A IA TC = 25C 8 A EAS TC = 25C 800 mJ dv/dt IS IDM, VDD VDSS, TJ 150C 35 V/ns PD TC = 25C 347 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ TL 1.6mm (0.062) from Case for 10s 300 C TSOLD Plastic Body for 10s 260 C Md Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g G DS D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 1.5mA 3.0 IGSS VGS = 30V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V 25 A 1.5 mA z z V 5.0 V z Applications z TJ = 125C z z RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 440 m z z (c) 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100419(12/11) IXFA16N60P3 IXFP16N60P3 IXFH16N60P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 * ID25, Note 1 10 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 5 (External) Qg(on) Qgs 17 S 2.3 1830 pF 217 pF 8.6 pF 20 ns 13 ns 42 ns 8 ns 36 nC 9 nC 13 nC VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 1 = Gate 2 = Drain 3 = Source 0.36 C/W RthJC RthCS TO-247 Outline TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V, Note1 16 A ISM Repetitive, pulse Width Limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.4 V 250 ns C A trr QRM IRM IF = 8A, -di/dt = 100A/s 0.7 7.6 VR = 100V TO-220 Outline Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Pins: 1 - Gate 3 - Source 2 - Drain 1 = Gate 2 = Drain 3 = Source 4 = Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA16N60P3 IXFP16N60P3 IXFH16N60P3 Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J = 25C 40 16 VGS = 10V 7V 14 VGS = 10V 8V 35 30 12 7V 10 ID - Amperes ID - Amperes 6V 8 6 25 20 6V 15 10 4 2 5 5V 5V 0 0 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 16 3.0 VGS = 10V 7V 14 VGS = 10V 2.6 6V R DS(on) - Normalized ID - Amperes 12 10 8 6 5V 2.2 I D = 16A I D = 8A 1.8 1.4 1.0 4 0.6 2 4V 0 0.2 0 2 4 6 8 10 12 14 16 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 8A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 18 3.4 VGS = 10V 16 3.0 TJ = 125C 14 2.6 12 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 2.2 1.8 TJ = 25C 10 8 6 1.4 4 1.0 2 0.6 0 0 5 10 15 20 25 ID - Amperes (c) 2011 IXYS CORPORATION, All Rights Reserved 30 35 40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFA16N60P3 IXFP16N60P3 IXFH16N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 30 20 TJ = - 40C 18 25 16 25C g f s - Siemens ID - Amperes 14 12 10 TJ = 125C 8 25C - 40C 20 125C 15 10 6 4 5 2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 2 4 6 8 10 12 14 16 18 20 22 ID - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 50 10 45 9 40 8 35 7 VDS = 300V 30 VGS - Volts IS - Amperes I D = 8A 25 20 TJ = 125C 15 I G = 10mA 6 5 4 3 TJ = 25C 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 4 8 VSD - Volts 12 16 20 24 28 32 36 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1 10,000 f = 1 MHz 1,000 Z(th)JC - C / W Capacitance - PicoFarads Ciss Coss 100 0.1 0.01 10 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_16N60P3(W5)11-29-11