2SK2654-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 900 8 32 35 8 241 150 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=6.98mH, Vcc=90V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V VGS=0V VGS=35V VDS=0V ID=4.0A VGS=10V Min. Typ. Max. 900 3.5 Tch=25C Tch=125C ID=4.0A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=8A VGS=10V RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C 4.0 4.5 10 500 0.2 1.0 10 100 1.48 2.00 2.5 5.0 1200 1800 180 270 90 140 30 50 100 150 100 150 65 100 8 1.0 1.5 950 12 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.83 35.0 Units C/W C/W 1 2SK2654-01 FUJI POWER MOSFET Characteristics Power Dissipation PD=f(Tc) 200 Safe operating area ID=f(VDS):D=0.01,Tc=25C 10 2 t=0.01 s 150 10 1 s 1 10s ID [A] PD [W] DC 100 100 s 10 0 1ms t 50 t D= T 10ms T 100ms 0 0 50 100 10 150 -1 10 0 10 1 10 o Tc [ C] Typical output characteristics Typical transfer characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C VGS=20V 10V 8V 14 10 ID [A] ID [A] 8 7V 10 nd e mm 6 6.5V 4 10 eco n sig ew n for 10 . de 1 12 0 -1 6V 2 0 0 5 10 tr No 15 20 25 30 5.5V 5V 10 35 -2 0 2 4 6 8 10 VGS [V] VDS [V] Typical drain-source on-state resistance Typical forward transconductance RDS(on)=f(ID):80s Pulse test, Tch=25C gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C 8 VGS= 5V 5.5V 6V 7 6.5V 7V 6 RDS(on) [ ] 1 gfs [s] 10 10 3 VDS [V] 16 10 2 0 5 4 3 8V 10V 20V 2 1 10 0 -1 10 -1 10 0 10 ID [A] 1 0 2 4 6 8 10 12 14 16 ID [A] 2 2SK2654-01 FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=4A,VGS=10V Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 6 6.0 5.0 max. 4.0 VGS(th) [V] RDS(on) [ ] 4 max. 2 typ. min. 3.0 2.0 typ. 1.0 0.0 0 -50 0 50 100 150 -50 0 50 100 150 o Tch [ C] o Tch [ C] Typical gate charge characteristic VGS=f(Qg):ID=8A,Tch=25C 40 800 Vcc=720V 0V 35 18 c= 0V c V 45 V 0 72 30 700 500 450V 25 400 20 200 180V 10 100 0 . n sig nd e mm 15 300 0 de ew n for VGS [V] 20 40 60 t No 80 100 o c e r 120 140 160 5 0 180 Qg [nC] Forward characteristic of reverse of diode IF=f(VSD):80s Pulse test,VGS=0V IF [A] VDS [V] 600 10 1 10 0 10 10 o Tch=25 C typ. -1 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD [V] 3 2SK2654-01 1 FUJI POWER MOSFET Transient thermal impedande Zthch=f(t) parameter:D=t/T 10 0 Zthch-c [K/W] 10 D=0.5 0.2 -1 10 0.1 0.05 t 0.02 D= 0 0.01 t T T -2 10 -5 10 -4 -3 10 10 -2 10 -1 10 0 10 1 10 t [s] de ew n for . n sig nd e mm t No o c e r 4