PD - 91504A IRF1310N HEXFET(R) Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.036 G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew 42 30 140 160 1.1 20 420 22 16 5.0 -55 to + 175 Units A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.50 --- 0.95 --- 62 C/W 5/14/98 http://store.iiic.cc/ IRF1310N Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 100 --- --- 2.0 14 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.11 --- --- --- --- --- --- --- --- --- --- 11 56 45 40 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 4.5 LS Internal Source Inductance --- 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1900 450 230 V(BR)DSS V(BR)DSS/TJ IGSS Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.036 VGS = 10V, ID = 22A 4.0 V VDS = V GS, ID = 250A --- S V DS = 25V, ID = 22A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 22A 15 nC VDS = 80V 58 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 42 --- --- showing the A G integral reverse --- --- 140 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 22A, VGS = 0V --- 180 270 ns TJ = 25C, IF = 22A --- 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 1.7mH ISD 22A, di/dt 180A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. RG = 25, IAS = 22A. (See Figure 12) http://store.iiic.cc/ IRF1310N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 1 10 100 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 oC TJ = 175 o C 10 7.0 8.0 10 100 Fig 2. Typical Output Characteristics 1000 6.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5.0 20us PULSE WIDTH TJ = 175 o C 1 0.1 VDS , Drain-to-Source Voltage (V) 100 4.5V 10 20us PULSE WIDTH TJ = 25 oC 1 0.1 1 4.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 9.0 10.0 I D = 36A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics http://store.iiic.cc/ VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( oC) Fig 4. Normalized On-Resistance Vs. Temperature IRF1310N VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 2500 Ciss 2000 1500 Coss 1000 Crss 500 1 10 ID = 22A VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 0 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 VDS , Drain-to-Source Voltage (V) 20 40 60 80 100 120 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 100 I D , Drain Current (A) C, Capacitance (pF) 3000 20 VGS , Gate-to-Source Voltage (V) 3500 10us 100 10 100us 10 1ms 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1 1.6 1 VSD ,Source-to-Drain Voltage (V) 10ms TC = 25 o C TJ = 175 o C Single Pulse 10 100 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area http://store.iiic.cc/ 1000 IRF1310N 50 RD VDS VGS I D , Drain Current (A) 40 D.U.T. RG + -VDD 30 10V Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 P DM 0.10 0.1 t1 0.05 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case http://store.iiic.cc/ 1 IRF1310N 1 5V L VDS D .U .T RG IA S 20V D R IV E R + V - DD 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 1000 TOP 800 BOTTOM ID 9.0A 16A 22A 600 400 200 0 25 V (B R )D SS 50 75 100 125 150 175 Starting T J , Junction Temperature (oC) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K 12V QG .2F .3F 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform http://store.iiic.cc/ Fig 13b. Gate Charge Test Circuit IRF1310N Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS http://store.iiic.cc/ * IRF1310N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A - -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 6.47 (.25 5) 6.10 (.24 0) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 3 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) 0 .3 6 (.01 4) 3X M B A M 0.55 (.02 2) 0.46 (.01 8) 2 .92 (.11 5) 2 .64 (.10 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB : IS TH IS A ISN AIR N F IR E X AEMXPA LMEP :L ETH 1 0F1 1 00 1 0 W ITAHS SAESMS BE LMYB L Y W ITH C EO D9EB 1M 9B1M L O TL OCTO D A INRTE A TIO IN TE N ARTNIO N A LN A L E C TIFR IE R R E CRTIFIE 10 1 0 IR F IR 1 0F10 L O GL O G O 9 2 4962 4 6 9B 9B1 M 1 M A S SAESMSBE LMYB L Y C EO D E L OTL O TC O D A NB U EMRB E R P A RPTA RNTU M D A TE D A TE C O DC EO D E (Y Y(Y W YWW) W ) Y Y Y=Y Y=E AYRE A R W WW =W W= EW E KE E K WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98 http://store.iiic.cc/ Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ http://store.iiic.cc/