2012-11-26
Rev.1.7 Page 1
BSP315P
SIPMOS Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• Logic Level
• d
v
/d
t
rated
Product Summary
Drain source voltage V
V
DS -60
Drain-Source on-state resistance
R
DS(on) 0.8 Ω
Continuous drain current A
I
D-1.17
VPS05163
123
4
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Unit
Value
-1.17
-0.94
A
Continuous drain current
T
A
= 25 °C
T
A
= 70 °C
I
D
Pulsed drain current
T
A
= 25 °C
I
D puls
-4.68
Avalanche energy, single pulse
I
D
= -1.17 A ,
V
DD
= -25 V,
R
GS
= 25 Ω
24
mJ
E
AS
Avalanche energy, periodic limited by
T
jmax
E
AR
0.18
d
v
/d
t
6
Reverse diode d
v
/d
t
I
S
= -1.17 A,
V
DS
= -48 V, d
i
/d
t
= 200 A/µs,
T
jmax
= 150 °C
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
A
= 25 °C
P
tot
1.8
W
Operating and storage temperature
T
j ,
T
stg
-55...+150
°C
IEC climatic category; DIN IEC 68-1 55/150/56
Type Package
Tape and Reel Information
BSP315PPG-SOT223
H6327: 1000 pcs/reel
Pin 1 Pin2/4 PIN 3
GDS
Marking
BSP315P
• Qualified according to AEC Q101
Packaging
Non dry
ESD Class; JESD22-A114-HBM
Class 0
•
HalogenfreeaccordingtoIEC61249221
BSP315P
Thermal Characteristics
Parameter Symbol UnitValues
min. max.typ.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4) 25 K/W-
R
thJS -
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
R
thJA
-
-
-
-
115
70
K/W
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = -250 µA
V
(BR)DSS -60 - V-
Gate threshold voltage,
V
GS =
V
DS
I
D = -160 µA -1 -1.5 -2
V
GS(th)
Zero gate voltage drain current
V
DS = -60 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = -60 V,
V
GS = 0 V,
T
j = 125 °C
µA
-1
-100
I
DSS
-0.1
-10
-
-
I
GSS - -10 -100Gate-source leakage current
V
GS = -20 V,
V
DS = 0 V nA
Drain-Source on-state resistance
V
GS = -4.5 V,
I
D = -0.89 A
R
DS(on) - 0.8 1.4 Ω
Drain-Source on-state resistance
V
GS = -10 V,
I
D = -1.17 A
R
DS(on) - 0.5 0.8 Ω
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2012-11-26
Rev.1.7 Page 2
BSP315P
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS≤2*
I
D*
R
DS(on)max ,
I
D = -0.89 A 0.7
g
fs S-1.4
Input capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
iss 130 160 pF-
C
oss - 5040Output capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz 2117
C
rss -
Turn-on delay time
V
DD = -30 V,
V
GS = -4.5 V,
I
D = -0.89 A,
R
G = 18 Ω
- 36 ns24
t
d(on)
Rise time
V
DD = -30 V,
V
GS = -4.5 V,
I
D = -0.89 A,
R
G = 18 Ω
t
r- 149
32 48
t
d(off)
Turn-off delay time
V
DD = -30 V,
V
GS = -4.5 V,
I
D = -0.89 A,
R
G = 18 Ω
-
Fall time
V
DD = -30 V,
V
GS = -4.5 V,
I
D = -0.89 A,
R
G = 18 Ω
t
f- 19 28
2012-11-26
Rev.1.7 Page 3
BSP315P
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Unit
ValuesSymbolParameter
min. typ. max.
Dynamic Characteristics
Gate to source charge
V
DD = -48 V,
I
D = -1.17 A -
Q
gs nC1.10.7
Gate to drain charge
V
DD = -48 V,
I
D = -1.17 A
Q
gd 1.8 2.6-
7.8-
Q
g
Gate charge total
V
DD = -48 V,
I
D = -1.17 A,
V
GS = 0 to -10 V 5.2
Gate plateau voltage
V
DD = -48 V,
I
D = -1.17 A
V
(plateau) - -3.14 - V
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 °C
I
S- - -1.17 A
Inverse diode direct current,pulsed
T
A = 25 °C
I
SM - - -4.68
Inverse diode forward voltage
V
GS = 0 V,
I
F = -1.17 A
V
SD - -0.97 -1.3 V
Reverse recovery time
V
R = -30 V,
I
F=
I
S , d
i
F/d
t
= 100 A/µs
t
rr - 30.5 46 ns
Reverse recovery charge
V
R = -30 V,
I
F=
l
S , d
i
F/d
t
= 100 A/µs
Q
rr - 36 54 µC
2012-11-26
Rev.1.7 Page 4
BSP315P
Drain current
I
D =
f
(
T
A)
parameter :
V
GS≥ −10V
0 20 40 60 80 100 120 °C 160
T
A
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
A
-1.3
BSP
315
P
I
D
Power Dissipation
P
tot =
f
(
T
A)
0 20 40 60 80 100 120 °C 160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
1.9
BSP
315
P
P
tot
Transient thermal impedance
Z
thJC =
f
(
t
p)
parameter :
D
=
t
p/
T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP
315
P
Z
thJC
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D =
f
(
V
DS )
parameter :
D
= 0 ,
T
A = 25 °C
-10 -1 -10 0 -10 1 -10 2
V
V
DS
-2
-10
-1
-10
0
-10
1
-10
A
BSP
315
P
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
t
p = 280.0µs
2012-11-26
Rev.1.7 Page 5
BSP315P
Typ. drain-source-on-resistance
R
DS(on) =
f
(
I
D)
parameter:
V
GS
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 A-2.6
I
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Ω
2.6
BSP
315
P
R
DS(on)
a
V
GS [V] =
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-5.5
h
h
-6.0
i
i
-6.5
j
j
-7.0
kk
-8.0
ll
-10.0
Typ. output characteristics
I
D =
f
(
V
DS)
parameter:
t
p = 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V-5.0
V
DS
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-2.4
A
-2.8
BSP
315
P
I
D
V
GS [V]
a
a -2.5
b
b -3.0
c
c -3.5
d
d -4.0
e
e -4.5
f
f -5.0
g
g -5.5
h
h -6.0
i
i -6.5
j
j -7.0
k
k -8.0
l
P
tot = 2W
l -10.0
Typ. transfer characteristics
I
D=
f
(
V
GS )
V
DS≥ 2 x
I
D x
R
DS(on)max
parameter:
t
p = 80 µs
0.0 -1.0 -2.0 -3.0 -4.0 V-6.0
V
GS
0.0
-0.5
-1.0
-1.5
-2.0
A
-3.0
I
D
Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter:
g
fs
0.0 0.5 1.0 1.5 2.0 A3.0
I
D
0.0
0.5
1.0
1.5
S
2.5
g
fs
2012-11-26
Rev.1.7 Page 6
BSP315P
Drain-source on-resistance
R
DS(on) =
f
(
T
j)
parameter:
I
D = -1.17 A,
V
GS = -10 V
-60 -20 20 60 100 °C 180
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Ω
2.1
BSP
315
P
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th) =
f
(
T
j)
parameter:
V
GS =
V
DS,
I
D = -160 µA
-60 -20 20 60 100 °C 160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
2%
-60 -20 20 60 100 °C 160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
typ
-60 -20 20 60 100 °C 160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
98%
-60 -20 20 60 100 °C 160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
Typ. capacitances
C = f(VDS)
Parameter:
V
GS=0 V,
f
=1 MHz
0 -5 -10 -15 -20 -25 -30 V-40
V
DS
0
10
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F =
f
(VSD)
parameter:
T
j , tp = 80 µs
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0
V
SD
-2
-10
-1
-10
0
-10
1
-10
A
BSP
315
P
I
F
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
2012-11-26
Rev.1.7 Page 7
BSP315P
Avalanche Energy
E
AS =
f
(
T
j)
parameter:
I
D = -1.17 A ,
V
DD = -25 V
R
GS = 25 Ω
25 45 65 85 105 125 °C 165
T
j
0
5
10
15
mJ
25
E
AS
Typ. gate charge
V
GS =
f
(
Q
Gate)
parameter:
I
D = -1.17 A pulsed
0.0 1.0 2.0 3.0 4.0 5.0 6.0 nC 8.0
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16
BSP
315
P
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS = f
(
T
j
)
-60 -20 20 60 100 °C 180
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
BSP
315
P
V
(BR)DSS
2012-11-26
Rev.1.7 Page 8
2012-11-26
Rev.1.7 Page 9
BSP315P