© Semiconductor Components Industries, LLC, 2012
August, 2018 − Rev. 5 1Publication Order Number:
MMBZ27VAW/D
MMBZxxVAWT1G Series,
SZMMBZxxVAWT1G Series
Zener Diodes, 40 Watt Peak
Power
SC−70 Dual Common Anode Zeners
These dual monolithic silicon Zener diodes are designed for
applications requiring protection capability. They a re intended for use in
voltage and ESD sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment and
other applications. Their dual junction common anode design protects
two separate lines using only one package. These devices are ideal for
situations where board space is at a premium.
Features
•SC−70 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
•Standard Zener Breakdown Voltage Range: 15 − 33 V
•Peak Power − 40 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
•ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
•Low Leakage < 5.0 mA
•Flammability Rating UL 94 V−0
•AEC−Q101 Qualified and PPAP Capable − SZMMBZxxVAWT1G
•SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•These are Pb−Free Devices*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
CATHODE 1 3 ANODE
CATHODE 2
www.onsemi.com
SC−70
CASE 419
STYLE 4
Device Package Shipping†
ORDERING INFORMATION
MARKING DIAGRAM
XX = Specific Device Code
M = Date Code
G= Pb−Free Package
1
XX MG
G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBZxxVAWT1G SC−70
(Pb−Free) 3,000 /
Tape & Reel
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
SZMMBZxxVAWT1G SC−70
(Pb−Free) 3,000 /
Tape & Reel
(Note: Microdot may be in either location)
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1)
@ TL ≤ 25°CPpk 40 W
Total Power Dissipation on FR−5 Board (Note 2)
@ TA = 25°C
Derate above 25°C
°PD°200
1.6
°
mW
mW/°C
Thermal Resistance Junction−to−Ambient RqJA 618 °C/W
Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. Non−repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
QVBR Maximum Temperature Coefficient of VBR
IFForward Current
VFForward Voltage @ IF
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK Uni−Directional Zener
IPP
IF
V
I
IR
IT
VRWM
VCVBR VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Device* Device
Marking
VRWM
IR @
VRWM
Breakdown Voltage VC @ IPP (Note 4)
QVBR
VBR (Note 3) (V) @ ITVCIPP
Volts nA Min Nom Max mA V A mV/5C
MMBZ15VAWT1G AT 12 50 14.25 15 15.75 1.0 21 1.9 12.3
MMBZ20VAWT1G AU 17 50 19.00 20 21.00 1.0 28 1.4 17.2
MMBZ27VAWT1G AA 22 50 25.65 27 28.35 1.0 40 1.0 24.3
MMBZ33VAWT1G AV 26 50 31.35 33 34.65 1.0 46 0.87 30.4
3. VBR measured at pulse test current IT at an ambient temperature of 25°C.
4. Surge current waveform per Figure 5 and derate per Figure 6
*Include SZ-prefix devices where applicable.
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series
www.onsemi.com
3
TYPICAL CHARACTERISTICS
−40 +50
18
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
0TEMPERATURE (°C) +100 +150
15
12
9
6
3
0−40 +25
1000
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (°C)
+85 +12
5
100
10
1
0.1
0.01
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ IT)
IR (nA)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
0 25 50 75 100 125 150 17
5
300
250
200
150
100
50
0
Figure 4. Steady State Power Derating Curve
TEMPERATURE (°C)
FR−5 BOARD
ALUMINA SUBSTRATE
01 23
320
280
240
160
120
40
0
C, CAPACITANCE (pF)
BIAS (V)
200
80 15 V
5.6 V
PD, POWER DISSIPATION (mW)
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series
www.onsemi.com
4
TYPICAL CHARACTERISTICS
0.1 1 10 100 1000
1
10
100
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
Figure 5. Pulse Waveform
VALUE (%)
100
50
001 234
t, TIME (ms)
Figure 6. Pulse Derating Curve
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
HALF VALUE − IPP
2
tP
tr≤ 10 ms
PEAK VALUE − IPP
100
90
80
70
60
50
40
30
20
10
00 25 50 75 100 125 150 175 20
0
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Maximum Non−repetitive Surge
Power, Ppk versus PW Figure 8. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
0.1 1 10 100 100
0
1
10
100
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ TA = 25°C
P
pk
, PEAK SURGE POWER (W)
Ppk, PEAK SURGE POWER (W)
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series
www.onsemi.com
5
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
AA2
De1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
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