Parameter Symbol IRF7811W Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain or Source TA = 25°C ID14
Current (VGS ≥ 4.5V) TL = 90°C 13 A
Pulsed Drain CurrentIDM 109
Power Dissipation TA = 25°C PD3.1 W
TL = 90°C 3.0
Junction & Storage Temperature Range TJ, TSTG –55 to 150 °C
Continuous Source Current (Body Diode) IS 3.8 A
Pulsed Source CurrentISM 109
Absolute Maximum Ratings
Parameter Max. Units
Maximum Junction-to-AmbientRθJA 40 °C/W
Maximum Junction-to-Lead RθJL 20 °C/W
Thermal Resistance
IRF7811W
01/06/09
IRF7811W
RDS(on) 9.0mΩ
QG 22nC
Qsw 10.1nC
Qoss 12nC
DEVICE CHARACTERISTICS
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
SO-8
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• 100% Tested for RG
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811W has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811W offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
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Parameter Min Typ Max Units Conditions
Diode Forward VSD 1.25 V IS = 15A, VGS = 0V
Voltage*
Reverse Recovery Qrr 45 nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery Qrr(s) 41 nC di/dt = 700A/µs
Charge (with Parallel (with 10BQ040)
Schottky)VDS = 16V, VGS = 0V, IS = 15A
Source-Drain Rating & Characteristics
Charge
Notes: Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at VGS = 5.0V, IF = 15A.
Electrical Characteristics
Current
Parameter Min Typ Max Units Conditions
Drain-to-Source BVDSS 30 – – V VGS = 0V, ID = 250µA
Breakdown Voltage
Static Drain-Source RDS(on) 9.0 12 mΩVGS = 4.5V, ID = 15A
on Resistance
Gate Threshold Voltage VGS(th) 1.0 V VDS = VGS,ID = 250µA
Drain-Source Leakage IDSS 30 VDS = 24V, VGS = 0
150 µA VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage IGSS ±100 nA VGS = ±12V
Current
Total Gate Chg Cont FET QG22 33 VGS=5.0V, ID=15A, VDS=16V
Total Gate Chg Sync FET QG16.3 VGS = 5V, VDS< 100mV
Pre-Vth QGS1 3.5 VDS = 16V, ID = 15A, VGS = 5.0V
Gate-Source Charge
Post-Vth QGS2 1.2 nC
Gate-Source Charge
Gate to Drain Charge QGD 8.8
Switch Chg(Qgs2 + Qgd) Q
sw 10.1
Output Charge Qoss 12 VDS = 16V, VGS = 0
Gate Resistance RG2.0 4.0 Ω
Turn-on Delay Time td (on) 11 VDD = 16V, ID = 15A
Rise Time tr11 ns VGS = 5.0V
Turn-off Delay Time td (off) 29 Clamped Inductive Load
Fall Time tf9.9
Input Capacitance Ciss – 2335 –
Output Capacitance Coss – 400 – pF VDS = 16V, VGS = 0
Reverse Transfer Capacitance Crss – 119 –
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Fig 1. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 3. On-Resistance Vs. Gate Voltage
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
15A
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VGS, Gate -to -Source Voltage (V)
0.005
0.010
0.015
0.020
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 15A
Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
110 100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs + C
gd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
04812 16 20 24
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
VGS, Gate-to-Source Voltage (V)
ID= 15A
VDS = 16V
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Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 6. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
Fig 5. Typical Transfer Characteristics
0.1
1
10
100
2.5 3.0 3.5 4.0 4.5 5.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
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SO-8 Package Outline(Mosfet & Fetky)
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Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
3 ',6*1$7(6/($')5((
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,17(51$7,21$/
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRF7811W
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Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/2009
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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