On-State Current
0.8 Amp
This series of Silicon Controlled
Rectifiers uses a high performance
PNPN technology.
This part is intended for general purpose
applications where high gate sensitivity
is required.
Gate Trigger Current
< 200 µA
Off-State Voltage
200 V ÷ 600 V
G
K
TO92
(Plastic)
RD26
(Plastic)
FS01...A FS01...B
AGK
A
SENSITIVE GATE SCR
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
IT(RMS)
PARAMETER
CONDITIONS
Value Unit
SYMBOL
IT(AV)
ITSM
ITSM
I2
t
IGM
PGM
PG(AV)
Tj
Tstg
Tsld
180º Conduction Angle, Tc = 115 ºC
Half Cycle,
Q
= 180 º, TC = 115 ºC
Half Cycle, 60 Hz
Half Cycle, 50 Hz
tp = 10ms, Half Cycle
20 µs max.
20 µs max.
20ms max.
10s max.
(-40
(-40
A
A
A
A
A
2
s
A
W
W
ºC
ºC
ºC
to
to
0.8
0.5
8
7
0.24
1
2
0.1
+125)
+150)
260
FS01...A/B
Repetitive Peak Off State
Voltage
PARAMETER
CONDITIONS
Unit
SYMBOL
VDRM
VRRM
RGK = 1 k
W
V
VOLTAGE
B
200
D
400
M
600
Mar - 05
SENSITIVE GATE SCR
PART NUMBER INFORMATION
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F S 01 01 B A00
FORMING
BU
PACKAGING
Electrical Characteristics
Off-State Leakage Current
PARAMETER
CONDITIONS
SENSITIVITY
Uni
SYMBOL
IGT
Gate Trigger Current
IDRM
VD = 12 VDC , RL = 140
W
. Tj = 25 ºC
02
200
0.8
0.1
8
5
V
V
V
mA
mA
MAX
MIN
MIN
MAX
50
150
MAX
/ IRRM
VTM
On-state Voltage
VGT
Gate Trigger Voltage
VGD
Gate Non Trigger Voltage
IH
Holding Current
dI / dt
Rth(j-a)
Critical Rate of Current Rise
Thermal Resistance
Junction-Amb for DC ºC/W
VD = VDRM ,Tj = 125 ºC
Tj = 25 ºC
VR = VRRM ,
at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC
IT = 50 mA,
tr
£
100 ns, f = 60 Hz,
Tj = 125 ºC
VD = 12 VDC , RL = 140
W
, Tj = 25 ºC
VD = VDRM , RL = 3.3k
W
,
Tj = 125 ºC
MIN A/µs
Tj = 125 ºC
rd
Dynamic resistance MAX 600 m
W
MAX
IL
6
Latching Current IG = 1 mA,
V/µs
dV / dt
Critical Rate of Voltage Rise MIN
Rth(j-c)
Thermal Resistance
Junction-Case for DC ºC/W
Vt 0
Tj = 125 ºC
Threshold Voltage MAX 0.95 V
IG = 2 x IGT
RGK = 1k
W
RGK = 220
W
RGK = 1k
W
Tj = 25 ºC
RGK = 1 k
W
VD = 0.67 x VDRM ,
R
GK
=1 k
W
,
Tj = 125 ºC
µ A
MIN
04
15
50
MAX
VR GM
Reverse Gate Voltage IR G = 10µA,
1.95 V
MAX
MAX
100
for AC 360 º conduction angle
2
S =1cm
01
1
20
03
20
200
11
4
25
18
0.5
5
µ A
µ A
1
80
80 2075 15 80 75
FS01...A/B
Mar - 05
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Tj=25 ºC
1E-2 1E-1 1E+0 1E-1
5
4
3
2
1
0
Tj = 125°C
10.00
1.00
0.10
0.01
0 0.2 0.6 0.8 1.0 1.20.4 1.4 1.6 1.8 2.0
VD = 0.67xVDRM
RGK=(kW)
IH [RGK] / IH[RGK = 1kW]
RGK=(kW)
dV/dt [RGK] / dV/dt [RGK = 220W]
Fig. 1: Maximum average power dissipation
versus average on-state current
SENSITIVE GATE SCR
Fig. 2: Average and D.C. on-state current
versus case temperature
1
0.8
0.6
0.4
0.2
0
I T(AV) (A)
020 40 60 80 100 120 140
DC
a = 180
º
T lead (ºC)
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration
1.0
[Zth(j-c) / Rth (j-c)]
1E-3 1E-2 1E-1 1E+0
tp (s)
0.5
0.2
0.1
IGT, IH (Tj) / IGT, IH (Tj = 25 ºC)
Tj (ºC)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20 20 60 80 1000 40 120 140
I
H
& IL
Fig. 4: Relative variation of gate trigger
current, holding and latching current versus
junction temperature
I GT
FS01...A/B
1
0.8
0.6
0.4
0.2
0
0
P (W)
a
360
º
0.60.40.2 0.8 1.0
Mar - 05
SENSITIVE GATE SCR
FS01...A/B
Fig. 10: On-state characteristics (maximum
values)
10
8
6
4
2
0
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Cgk(nF)
0 2 4 6 8 10 12 14 16 18 20 22
VD = 0.67 x VDRM
Tj = 125 ºC
RGK
= 220
W
Fig. 8: Non repetitive surge peak on-state
current versus number of cycles.
Fig. 9: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I2t.
1 10 100 1,000
I TSM
Tj initial = 25 ºC
Number of cycles
8
7
6
5
4
3
2
1
0
012 3
ITM(A)
45
Tj max
Vto = 0.95
V
Rt = 0.600ý
VTM(V)
Tj
max
Tj initial
25 ºC
10
1
0.1
1
100
10
1
0.1
10
ITSM(A). I2t (A2s)
Tj initial = 25 ºC
tp(ms)
I2 t
ITSM
Mar - 05
-
4.55
2.42
1.15
4.55
12.7
3.55
0.38
0.33
1.5
4.6
2.54
1.27
4.6
14.1
3.6
0.43
0.38
-
4.65
2.66
1.39
4.65
15.5
3.65
0.48
0.43
PACKAGE MECHANICAL DATA
RD26 (Plastic)
A
B
C
D
E
F
G
a
b
REF
.
DIMENSIONS
Millimeters
Min. Typ. Max.
Marking: type number
Weight: 0.2 g
SENSITIVE GATE SCR
FS01...A/B
Mar - 05
Marking: type number
Weight: 0.2 g
0.9
4.40
2.34
1.07
4.40
12.7
3.40
1.30
0.38
0.33
1.2
4.6
2.54
1.27
4.6
14.1
3.6
1.5
0.44
0.41
1.5
4.80
2.74
1.47
4.80
15.5
3.86
1.70
0.51
0.51
PACKAGE MECHANICAL DATA
TO92
A
B
C
D
E
F
G
H
a
b
REF.
DIMENSIONS
Milimeters
Min. Typ. Max.
Marking: type number
Weight: 0.2 g
PACKAGE MECHANICAL DATA
TO92 (FORTAPE & REEL)
A
B
C
D
E
F
G
a
b
REF.
DIMENSIONS
Milimeters
Min. Typ. Max.
-
4.55
4.96
2.42
4.55
12.7
3.55
0.38
0.33
1.5
4.6
5.08
2.54
4.6
14.1
3.6
0.43
0.38
-
4.65
5.2
2.66
4.65
15.5
3.65
0.48
0.43
-
4.55
2.42
1.15
4.55
12.7
3.55
0.38
0.33
1.5
4.6
2.54
1.27
4.6
14.1
3.6
0.43
0.38
-
4.65
2.66
1.39
4.65
15.5
3.65
0.48
0.43
