DMN2009LSS
Document number: DS31409 Rev. 7 - 2
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October 2013
© Diodes Incorporated
DMN2009LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max ID max
TA = +25°C
20V
8mΩ @ VGS = 10V 12A
9mΩ @ VGS = 4.5V 10A
12mΩ @ VGS = 2.5V 8A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN2009LSS-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
TOP VIEW
Top View
Internal Schematic
D
S
G
DS
D
D
D
S
S
G
Equivalent circuit
Chengdu A/T Site Shanghai A/T Site
= Manufacturer’s Marking
N2009LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 4
8 5
N2009LS
WW
YY
1 4
8 5
N2009LS
WW
YY
DMN2009LSS
Document number: DS31409 Rev. 7 - 2
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DMN2009LSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS 12 V
Drain Current (Note 5) Steady State TA = +25°C
TA = +70°C ID 12
9.6 A
Pulsed Drain Current (Note 6) IDM 42 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) PD 2 W
Thermal Resistance, Junction to Ambient R
JA 62.5 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 20V, VGS = 0V
Gate-Source Leakage IGSS 100 nA VGS = 12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
0.5 1.2 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS (ON)
8
9
12
mΩ
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
VGS = 2.5V, ID = 8A
Forward Transconductance gfs 27 S VDS = 5V, ID = 6.5A
Diode Forward Voltage VSD 0.5 0.7 1.2 V
VGS = 0V, IS = 3A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss 2555 pF
VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 523 pF
Reverse Transfer Capacitance Crss 496 pF
Gate Resistance RG 1.1 Ω VGS = 0V VDS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge Qg 28.9
58.3
nC
VDS = 10V, VGS = 4.5V, ID = 12A
VDS = 10V, VGS = 10V, ID = 12A
Gate-Source Charge Q
g
s 3.7 VDS = 10V, VGS = 10V, ID = 12A
Gate-Drain Charge Q
g
d 11.4 VDS = 10V, VGS = 10V, ID = 12A
Notes: 5. Device mounted on 2 oz, FR-4 PCB, with RJA = 62.5°C/W
6. Pulse width 10μS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN2009LSS
Document number: DS31409 Rev. 7 - 2
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October 2013
© Diodes Incorporated
DMN2009LSS
0123 45
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
5
10
15
20
25
30
V = 2.5V
GS
V = 4.5V
GS
V = 10V
GS
V = 1.5V
GS
V = 3.0V
GS
V = 4.0V
GS
V = 5V
DS
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
5
10
15
20
25
30
0.4 0.6 0.8 1 1.2 1.4 1.6
V = 10V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
Fig. 3 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-TO-SOURCE RESISTANCE ( )
DS(ON)
0
0.005
0.01
0.015
V = 4.5V
I = 10A
GS
D
V = 2.5V
I = 8A
GS
D
V = 10V
I = 12A
GS
D
Fig. 4 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
DS(ON)
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V = 2.5V
I = 8A
GS
D
V = 4.5V
I = 10A
GS
D
V = 10V
I = 12A
GS
D
C, CAPACITANCE (pF)
Fig. 5 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
100
1,000
10,000
04 8121620
C
iss
C
oss
C
rss
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
T , AMBIENT TEMPERATURE (°C)
A
-50 -25 0 25 50 75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
I = 250µA
D
DMN2009LSS
Document number: DS31409 Rev. 7 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
V , SOURCE-DRAIN VOLTAGE (V)
SD
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
Fig. 7 Diode Forward Voltage vs. Current
0.0001
0.001
0.01
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
Fig. 8 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001 0.001 0.01 0.1 1 10 100 1,000
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
R (t) = r(t) * R
R = 99°C/W
JA JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
SO-8
Dim Min Max
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
0 8
All Dimensions in mm
Gauge Plane
Seating Plane
Detail ‘A’
Detail ‘A’
E
E1
h
L
D
eb
A2
A1
A
45
°
7
°~
9
°
A3
0.254
DMN2009LSS
Document number: DS31409 Rev. 7 - 2
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October 2013
© Diodes Incorporated
DMN2009LSS
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Copyright © 2013, Diodes Incorporated
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Dimensions Value (in mm)
X 0.60
Y 1.55
C1 5.4
C2 1.27
X
C1
C2
Y
