MITSUBISHI Nch POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE FS2VS-14A OUTLINE DRAWING Dimensions in mm 410.5MAX, 45 \ *% | \ 5 \ ON oun! US 33. ge5 3 ag | oa ul Sb le 08 j t Ge 8 x ra 2a e| 0) GATE 4 (4) DRAIN O 3) SQUACE VDSS crc cece rece endear eee e ete es teen eneeeesene 700V ) DRAIN @ FDS (ON) (MAX) cette reece tert e eee e reer e eens 9.75Q 4 3 WD cect e reece cece ence cnet reer et enter nee eenaen enna 2A 10-2208 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Te = 25C) Parameter Conditions Voss Drain-source Vas = 0V Vass Gate-source Vos = 0V lo Drain current 2 lom Drain current 6 Po Maximum 65 Teh Channel 55 ~ +150 T: -5 ~ +150 1.2 2 - 386 9 MITSUBISHI ELECTRICELECTRICAL CHARACTERISTICS (Ten = 25C) MITSUBISHI Nch POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE Limi Symbol Parameter Test conditions - mits Unit Min. Typ. Max V (BR) DSS | Drain-source breakdown voliage | lp = 1mA, VaS = 0V 700 Vv V (8R) GSS | Gate-source breakdown voltage | IGS = +100nA, Vos = OV +30 _ _ Vv lass Gate leakage current VGS = t25V, VDS = OV _ _ +10 pA loss Drain current Vos = 7OO0V, Vas = OV ~ _ 1 mA VGS (th) Gate-source threshold voltage Ib = 1mA, Vos = 10V 2 3 4 v rDS (ON) Drain-source on-state resistance | lo = 1A, VGS = 10V _ 7.47 9.75 Q VoS (ON) | Drain-source on-state voltage | Ib = 1A, Vas = 10V _ 7.47 9.78 Vv lyts | Forward transfer admittance | Ip = 1A, VDS = 10V 0.72 1.2 Ss Ciss Input capacitance = 270 _ pF Coss Output capactance Vos = 25V, VGs = OV, f = IMHz _ 30 _ pF Crss Reverse transfer capacitance _ _ pF td (on) Turn-on delay time -- 10 ns tr Rise time Vbo = 200V, ID = 1A, Vas = 10V, ~ 12 _ ns ta {off} Turn-off delay time RGEN = Res = 502 _ 33 _ ns tt Fall time ~ 21 _ ns Vso Source-drain voltage IS = 1A, Vas = OV = 1.0 15 Vv Rth (ch-c) | Thermal resistance Channel to case _ _ 1.92 CW PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 400 101 _ z tw = 10us = - 3 2 10046 Zz 4090 9 60 5 7 & a 5 ims oc a. id 3 a 40 3 2 1Oms. z1 oo 7100ms a To = 25C = 20 & 5 Puise oO 3 a 2 0 10-2 0 50 100 150 200 109 23 5710! 23 57108 23 57103 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) $ Te = 25C 2.0 Te = 26C Vas = 20V TOV Pulse Test Pulse Test = 4 <= 16 3 Ves = 20V a Zo 10V 5 3 B 12 e e iva Qo 2 3 08 Zz Z < < 5 4 B 04 av Av 0 0 0 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE. Vos (V) MITSUBISHI 2 ~ 387 ELECTRICMITSUBISHI Nch POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE DRAIN-SOURCE ON-STATE CAPACITANCE Ciss, Coss, Crss (pF) VOLTAGE Vos (ON) (V) DRAIN CURRENT Ip (A) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) To = 25C Pulse Test tH <= 9S 2f 58 O ES 3 Zz ae 22 a wo oe 0 0 4 8 12 16 20 GATE-SOQURACE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) To = 25C Vps = 50V Pulse Test ie Lo 2 > fe EO 22 ft SE 53 Pe 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas {(V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 3 ~ 2 g 102 lu 7 = 5 & 3 oO z 2 = 10% ze 5 B 3} Ten = 25C Obt= 1MHz 10 Ves = 23 57100 23 57101 23 57102 2 DRAIN-SOURCE VOLTAGE Vos (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) nm o To = 25C Pulse Test = oO Vas = 10V 20V = ho 0 1077 23 57100 23 57101 23 57102 DRAIN CURRENT Ib (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 Vps = 10V Pulse Test Ye wo GN C= 25C 10 126C 75C mG ON 1 Oto 23 57100 2 3 5 710! DRAIN CURRENT Ip (A) SWITCHING CHARACTERISTICS (TYPICAL) 108 7 Toh = 25C 5 Voo = 200V 3 Ves = 10V 2 RGEN = Aas = 502 102 7 5 3 tailor} 2 tt 10! 7 td{on) 5 3 2 19 107+ 2 345 7100 2 345 710! DRAIN CURRENT Ip (A) ate MITSUBISHI ELECTRICDRAIN-SOURCE ON-STATE RESISTANCE rps (on) (1C) DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) DRAIN-SOURCE BREAKDOWN VOLTAGE V (Ba) Dss (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DS5 (25C) GATE-SOURCE VOLTAGE Vas {V) (25C) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) o Teh = 25C In = 2A 16 Vos = 250V 12 8 4 % 4 8 12 16 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 10V ip = V/2lb Pulse Test ~50 0 50 100 150 20 CHANNEL TEMPERATURE Teh (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Ves = OV ipD= 1mA 04 ~50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE = Zth (ch-o) (CC/W) SOURCE CURRENT is (A) GATE-SOURCE THRESHOLD VOLTAGE V6s (th) (V) 5 3 2 MITSUBISHI Nch POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) Vas = 0V Pulse Test T = 125C TSC 26C 0 0.8 1.6 2.4 3.2 40 SOURCE-DRAIN VOLTAGE Vsp () THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vos = 10V lp = ImA -50 0 50 100 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 10-2 10423 5710-323 5710-223 5710-123 5710023 5710'23 5710 PULSE WIDTH tw (s) MITSUBISHI ELECTRIC 2 ~ 389