Schnelle IR-Lumineszenzdiode (950 nm) im 5 mm Radial-Gehause High-Speed Infrared Emitter (950 nm) in 5 mm Radial Package SFH 4501, SFH 4502, SFH 4503 SFH 4501 SFH 4502 SFH 4503 Wesentliche Merkmale Features * GaAs-LED mit sehr hohem Wirkungsgrad * Hohe Zuverlassigkeit * Gute spektrale Anpassung an Si-Fotoempfanger * Very highly efficient GaAs-LED * High reliability * Spectral match with silicon photodetectors Anwendungen Applications * IR-Fernsteuerung von Fernseh- und Rundfunkgeraten, Videorecordern, Lichtdimmern * Geratefernsteuerungen fur Gleich- und Wechsellichtbetrieb * Sensorik * Diskrete Lichtschranken * IR remote control of hi-fi and TV-sets, video tape recorders, dimmers * Remote control for steady and varying intensity * Sensor technology * Discrete interrupters Typ Type Bestellnummer Gehause Ordering Code Package SFH 4501 Q62702-P5061 SFH 4502 Q62702-P5062 SFH 4503 Q62702-P5305 2001-03-09 5-mm-LED-Gehause (T 13/4), schwarz eingefarbt, Anschlu im 2.54-mm-Raster (1/10''), Anodenkennzeichnung: kurzerer Anschlu 5 mm LED package (T 13/4), black-colored epoxy resin lens, solder tabs lead spacing 2.54 mm (1/10''), anode marking: short lead 1 SFH 4501, SFH 4502, SFH 4503 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Sperrspannung Reverse voltage VR 3 V Durchlastrom Forward current IF (DC) 100 mA Stostrom, tp = 10 s, D = 0 Surge current IFSM 2.2 A Verlustleistung Power dissipation Ptot 180 mW Warmewiderstand Sperrschicht - Umgebung, freie Beinchenlange max. 10 mm Thermal resistance junction - ambient, lead length between package bottom and PCB max. 10 mm RthJA 375 K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms peak 950 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 m A, tp = 20 ms 40 nm Abstrahlwinkel Half angle SFH 4501 SFH 4502 SFH 4503 Aktive Chipflache Active chip area A 0.09 mm2 Abmessungen der aktiven Chipflache Dimension of the active chip area LxB LxW 0.3 x 0.3 mm Kennwerte (TA = 25 C) Characteristics 2001-03-09 Grad deg. 7 18 4 2 SFH 4501, SFH 4502, SFH 4503 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit 10 ns Co 35 pF VF VF 1.5 ( 1.8) 3.2 ( 4.0) V V Sperrstrom, Reverse current VR = 3 V IR 0.01 ( 10) A Gesamtstrahlungsflu, Total radiant flux IF = 100 mA, tp = 20 ms e 32 mW Temperaturkoeffizient von Ie bzw. e, TCI - 0.44 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV - 1.5 mV/K Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TC + 0.2 nm/K Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, tp = 20 ms, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung, Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA 2001-03-09 3 SFH 4501, SFH 4502, SFH 4503 Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Description Symbol Werte Values Einheit Unit SFH 4501 SFH 4502 SFH 4503 Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie typ 63 90 25 50 63 200 mW/sr Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Ie typ 550 310 1200 mW/sr 2001-03-09 4 SFH 4501, SFH 4502, SFH 4503 Relative Spectral Emission Irel = f () Radiant Intensity Single pulse, tp = 20 s OHF00777 100 e = f (IF ) e 100 mA OHF00809 10 2 erel OHF00359 120 F mA e 100 e (100 mA) 80 Max. Permissible Forward Current IF = f (T A ) 80 10 0 60 R thJA = 375 K/W 60 10 -1 40 40 10 -2 20 0 20 10 -3 10 0 10 3 mA 10 4 F Forward Current IF = f (VF) single pulse, tp = 20 s Permissible Pulse Handling Capability IF = f (), TA = 25 C, duty cycle D = parameter F 800 850 900 950 1000 nm 1100 OHF00784 10 4 mA IF 101 A 5 10 3 10 1 10 2 OHF00041 t D = TP 10 2 IF T D= 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 10 1 100 10 tP 0 5 10 -1 10 -2 10 -3 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VF 2001-03-09 10-1 -5 10 10-4 10-3 10-2 10-1 100 101 s 10 2 tp 5 0 0 20 40 60 80 100 C 120 TA SFH 4501, SFH 4502, SFH 4503 Radiation Characteristics rel = f () SFH 4501 40 30 20 10 0 OHF00859 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation Characteristics rel = f () SFH 4502 40 30 20 10 0 OHF00810 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation Characteristics rel = f () SFH 4503 40 30 20 10 0 OHF01142 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2001-03-09 0.8 0.6 0.4 0 20 40 60 80 6 100 120 SFH 4501, SFH 4502, SFH 4503 Mazeichnung Package Outlines SFH 4501 2.54 (0.100) spacing 0.8 (0.031) 0.4 (0.016) 0.6 (0.024) 0.4 (0.016) 9.0 (0.354) 8.2 (0.323) 7.8 (0.307) 7.5 (0.295) 1.8 (0.071) 1.2 (0.047) 29.5 (1.161) 27.5 (1.083) o5.1 (0.201) o4.8 (0.189) Area not flat 5.9 (0.232) 5.5 (0.217) 0.6 (0.024) 0.4 (0.016) Anode GEXY6952 SFH 4502 5.9 (0.232) 7.5 (0.295) 5.5 (0.217) 1.8 (0.071) Anode 1.2 (0.047) 29.0 (1.142) 27.0 (1.063) 9.0 (0.354) o4.8 (0.189) 7.8 (0.307) o5.1 (0.201) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016) 0.6 (0.024) 2.54 (0.100) spacing Area not flat Anode 0.6 (0.024) 0.4 (0.016) 8.2 (0.323) GEXY6718 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-03-09 7 SFH 4501, SFH 4502, SFH 4503 SFH 4503 9.0 (0.354) 1.8 (0.071) 1.2 (0.047) 29 (1.142) 27 (1.063) 5.9 (0.232) 5.5 (0.217) o4.8 (0.189) 7.5 (0.295) 0.8 (0.031) 0.4 (0.016) Area not flat 2.54 (0.100) spacing 0.6 (0.024) 0.4 (0.016) 7.8 (0.307) o5.1 (0.201) 8.2 (0.323) 5.7 (0.224) 0.6 (0.024) 5.1 (0.201) 0.4 (0.016) Chip position Anode GEXY6048 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-03-09 8 SFH 4501, SFH 4502, SFH 4503 Lotbedingungen Soldering Conditions Tauch-, Schwall- und Schlepplotung Dip, Wave and Drag Soldering Kolbenlotung (mit 1,5-mm-Kolbenspitze) Iron Soldering (with 1.5-mm-bit) Lotbadtemperatur Maximal zulassige Lotzeit Abstand Lotstelle - Gehause Temperatur des Kolbens Temperature of the Soldering Bath Max. Perm. Soldering Time Distance between Solder Joint and Case Temperature Max. of the Permissible Soldering Iron Soldering Time Distance between Solder Joint and Case 260 C 10 s 1.5 mm 300 C 1.5 mm Maximale zulassige Lotzeit 3s Abstand Lotstelle - Gehause Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-03-09 9